Abstract: A touch structure includes at least one touch functional layer group and at least one protective pad layer. The at least one touch functional layer group includes an organic layer and a conductive layer that are sequentially stacked. The at least one protective pad layer is arranged in one-to-one correspondence with the at least one touch functional layer group. A protective pad layer is located between a conductive layer and an organic layer of a corresponding touch functional layer group. An orthographic projection of the protective pad layer on the organic layer at least partially overlaps with an orthographic projection of the conductive layer on the organic layer.

Abstract: Provided are a display substrate, a preparation method thereof and a display apparatus. The display substrate includes a first semi-conductive layer, a first conductive layer, a second conductive layer, a second semi-conductive layer, a third conductive layer, an interlayer insulating layer and an organic layer stacked on a substrate. The first semi-conductive layer includes an active layer of a polysilicon transistor, the first conductive layer includes a gate electrode of a polysilicon transistor and a first electrode plate of a storage capacitor, the second conductive layer includes a second electrode plate of a storage capacitor, the second semi-conductive layer includes an active layer of an oxide transistor, and the third conductive layer includes a gate electrode of an oxide transistor.

Abstract: The present disclosure relates to tellurite crystals, growing methods of the same, and applications thereof; the crystals a chemical formula of MTe3O8, wherein M=Ti, Zr, Hf, which belongs to an Ia-3 space group of a cubic crystal system, wherein a transmittance waveband ranges from visible light to infrared light, with a transparency ?70%. According to the present disclosure, a growing method of a tellurite crystal is provided, wherein the crystal may be grown using a flux method, a Czochralski method, or a Bridgman-Stockbarger method. The tellurite crystals may be used as an acousto-optic crystal for fabricating an optical modulation device. The present disclosure takes the lead internationally in growing the tellurite single crystals, the size and quality of which sufficiently meet the demands of practical applications of the tellurite single crystals.

Abstract: The present disclosure relates to use of a quaternary molybdenum/tungsten tellurite crystal and a device thereof. The quaternary molybdenum/tungsten tellurite crystal is used as an acousto-optic material, wherein the quaternary molybdenum/tungsten tellurite comprises tellurium (Te) and tungsten (W), or tellurium (Te) and molybdenum (Mo). The crystal has abundant kinds, is non-toxic, and includes high, medium and low symmetry crystal systems; it easily produces a large-size and high-quality single crystal and almost meets all requirements of excellent acousto-optic properties. In the present disclosure, by selecting different light transmission directions and excitation source directions to fabricate an acousto-optic device with practical application values according to the requirements of the crystal acousto-optic device and the crystal characteristics, high-performance acousto-optic Q switching laser output is achieved.

Abstract: The present disclosure relates to use of a quaternary molybdenum/tungsten tellurite crystal and a device thereof. The quaternary molybdenum/tungsten tellurite crystal is used as an acousto-optic material, wherein the quaternary molybdenum/tungsten tellurite comprises tellurium (Te) and tungsten (W), or tellurium (Te) and molybdenum (Mo). The crystal has abundant kinds, is non-toxic, and includes high, medium and low symmetry crystal systems; it easily produces a large-size and high-quality single crystal and almost meets all requirements of excellent acousto-optic properties. In the present disclosure, by selecting different light transmission directions and excitation source directions to fabricate an acousto-optic device with practical application values according to the requirements of the crystal acousto-optic device and the crystal characteristics, high-performance acousto-optic Q switching laser output is achieved.

Abstract: The present disclosure relates to tellurite crystals, growing methods of the same, and applications thereof; the crystals a chemical formula of MTe3O8, wherein M=Ti, Zr, Hf, which belongs to an Ia-3 space group of a cubic crystal system, wherein a transmittance waveband ranges from visible light to infrared light, with a transparency ?70%. According to the present disclosure, a growing method of a tellurite crystal is provided, wherein the crystal may be grown using a flux method, a Czochralski method, or a Bridgman-Stockbarger method. The tellurite crystals may be used as an acousto-optic crystal for fabricating an optical modulation device. The present disclosure takes the lead internationally in growing the tellurite single crystals, the size and quality of which sufficiently meet the demands of practical applications of the tellurite single crystals.