Abstract: The present application relates to the field of integrated circuit design and manufacturing, and discloses a USB transmission device and a transmission method, which may greatly improve the transmission rate when transmitting a large number of small files. The device includes: a configuration module, configured to configure a first transfer ring corresponding to a first transfer thread and a second transfer ring corresponding to a second transfer thread for one endpoint in a memory; a USB host controller, configured to directly perform a transmission of the second transfer thread according to the configured second transfer ring when a transmission of the first transfer thread ends.

Abstract: The present application relates to the field of integrated circuit design and manufacturing, and discloses a USB transmission device and a transmission method, which may greatly improve the transmission rate when transmitting a large number of small files. The device includes: a configuration module, configured to configure a first transfer ring corresponding to a first transfer thread and a second transfer ring corresponding to a second transfer thread for one endpoint in a memory; a USB host controller, configured to directly perform a transmission of the second transfer thread according to the configured second transfer ring when a transmission of the first transfer thread ends.

Abstract: A hole punch comprising a movable punch pin arranged to punch a hole in a material. The hole punch comprises a first lever pivotally attached to a base, and in communication with the punch pin. The hole punch also includes a second lever pivotally attached to the first lever, and a third lever pivotally attached to the base, and pivotally attached to the second lever. Rotation of the third lever is arranged to drive movement of the second lever and first lever to cause movement of the punch pin.

Abstract: A first on-chip test structure monitors hot carrier degradation. A degrading ring oscillator is subjected to hot carrier effects while a non-degrading ring oscillator is not. As the device ages, hot carrier effects degrade the degrading ring counter. The second test structure monitors TDDB degradation. A plurality of N parallel connected capacitors have a stress voltage applied to them such that the time to failure of the first capacitor is the same that experienced by percentage of gates under normal usage. A drop in the resistance indicates breakdown of a capacitor. The third test structure monitors electromigration degradation. M minimum width metal lines are connected in parallel. A current is applied such that the time to failure of all metal lines is the same as that experienced by a percentage of minimum width metal lines under normal usage. An increase in resistance indicates breakdown of a metal line.

Abstract: Described is a system with three on chip monitoring test structures. If any of the three test structures indicates an end of life failure, a bit will be set indicating that the IC is near failure and should be replaced. This is done prior to actual device failure and will eliminate down time of the system where this IC is used. The first test structure monitors hot carrier degradation and is comprised of two ring oscillators. One is subjected to hot carrier effects (degrading ring oscillator) and the other is not subjected to hot carrier effects (non-degrading ring oscillator). Initially, both ring oscillators will each have fixed frequencies, but as the device ages, hot carrier effects degrade the degrading ring counter. Using the non-degrading ring oscillator, the degradation can be quantified and flag a failure. The second test structure monitors TDDB degradation.