Patents by Inventor Zenpei Tani
Zenpei Tani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8502238Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: GrantFiled: November 28, 2012Date of Patent: August 6, 2013Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Publication number: 20130114633Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: ApplicationFiled: November 28, 2012Publication date: May 9, 2013Inventors: Shigetoshi ITO, Takayuki YUASA, Yoshihiro UETA, Mototaka TANEYA, Zenpei TANI, Kensaku MOTOKI
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Patent number: 8334544Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: GrantFiled: July 14, 2010Date of Patent: December 18, 2012Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Publication number: 20100278205Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: ApplicationFiled: July 14, 2010Publication date: November 4, 2010Applicants: SHARP KABUSHIKI KAISHA, SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Shigetoshi ITO, Takayuki YUASA, Yoshihiro UETA, Mototaka TANEYA, Zenpei TANI, Kensaku MOTOKI
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Patent number: 7781244Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: GrantFiled: September 16, 2008Date of Patent: August 24, 2010Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Patent number: 7498608Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: GrantFiled: October 28, 2002Date of Patent: March 3, 2009Assignees: Sharp Kabushiki Kaisha, Sumitomo Electric Industries, Ltd.Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Publication number: 20090011530Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: ApplicationFiled: September 16, 2008Publication date: January 8, 2009Applicants: SHARP KABUSHIKI KAISHA, SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Shigetoshi ITO, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Publication number: 20050042787Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.Type: ApplicationFiled: October 28, 2002Publication date: February 24, 2005Inventors: Shigetoshi Ito, Takayuki Yuasa, Yoshihiro Ueta, Mototaka Taneya, Zenpei Tani, Kensaku Motoki
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Publication number: 20040238024Abstract: The present invention is directed to a thin plate manufacturing apparatus for forming a thin plate on the surface of a substrate by dipping the substrate held by a substrate transport mechanism (1) in melting fluid, a thin plate manufacturing method, and a solar cell using the thin plate, the substrate transfer mechanism (1) installed so as to be movable in horizontal direction (104) along a horizontal moving shaft (8) installed so as to be movable along vertical moving shaft (9). Further, the substrate transfer mechanism (1) comprising a means for diagonally inclining the substrate (2) or a means for attaching/detaching the substrate, whereby the thin plate of flat shape can be provided and the shape of the thin plate thus obtained can be optimized.Type: ApplicationFiled: February 9, 2004Publication date: December 2, 2004Inventors: Shuji Goma, Hirozumi Gokaku, Kohzaburon Yano, Zenpei Tani
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Patent number: 6707081Abstract: A photodetector with a built-in circuit includes a semiconductor substrate, an integrated circuit provided on the semiconductor substrate, and a photodiode provided on the semiconductor substrate. The integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit.Type: GrantFiled: August 6, 2001Date of Patent: March 16, 2004Assignee: Sharp Kabushiki KaishaInventors: Takahiro Takimoto, Isamu Okubo, Toshimitsu Kasamatsu, Masaru Kubo, Zenpei Tani
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Patent number: 6448614Abstract: A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.Type: GrantFiled: May 25, 2001Date of Patent: September 10, 2002Assignee: Sharp Kabushiki KaishaInventors: Masaru Kubo, Toshihiko Fukushima, Zenpei Tani
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Publication number: 20020030206Abstract: A photodetector with a built-in circuit includes a semiconductor substrate, an integrated circuit provided on the semiconductor substrate, and a photodiode provided on the semiconductor substrate. The integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit.Type: ApplicationFiled: August 6, 2001Publication date: March 14, 2002Inventors: Takahiro Takimoto, Isamu Okubo, Toshimitsu Kasamatsu, Masaru Kubo, Zenpei Tani
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Publication number: 20020014643Abstract: A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of the SOI wafer; and a signal processing circuit formed in a second region of the SOI wafer, wherein the photodiode includes a photosensitive layer formed of an SiGe layer.Type: ApplicationFiled: May 25, 2001Publication date: February 7, 2002Inventors: Masaru Kubo, Toshihiko Fukushima, Zenpei Tani
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Patent number: 5557116Abstract: A semiconductor laser device includes a base, a semiconductor laser chip and a resin layer enclosing the laser chip. The base may have a monitor photodiode mounted thereon in the vicinity of the laser chip. The resin layer enclosing the laser chip or both of the laser chip and the monitor diode chip is made of a single synthetic resin having a thickness not greater than 500 .mu.m and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the laser chip.Type: GrantFiled: December 22, 1993Date of Patent: September 17, 1996Assignee: Sharp Kabushiki KaishaInventors: Katsushige Masui, Nobuyuki Miyauchi, Zenpei Tani, Hiroshi Chikugawa, Makoto Tsuji, Masaru Ogawa, Takehiro Shiomoto
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Patent number: 5304812Abstract: An optoelectronic device for sensing an object without any contact, the optoelectronic device being adapted to be connected to a control device which is capable of sending an identification code to the optoelectronic device, the optoelectronic device includes an optoelectronic element (110, 111) for receiving an input signal and for converting the received signal into an electrical signal, an address memory (121) for storing a self identification code, a determining unit (126) connected to the address memory (121) for determining a coincidence between the self identification code stored in the address memory (121) and the identification code sent from the control device, and an activating unit (127) connected to the determining unit (126) for driving the optoelectronic element (110, 111) at a time when the self identification code coincides with the identification code.Type: GrantFiled: November 18, 1991Date of Patent: April 19, 1994Assignee: Sharp Kabushiki KaishaInventors: Zenpei Tani, Kiyoshi Ebina, Yukihisa Oda, Nobumasa Ono, Masahiro Morita, Mitsuo Kobachi, Kazuhito Nagura, Hajime Kashida, Hirohumi Sindo, Mitsuru Hosoki, Kiyoshi Kumata, Atsushi Murayama, Seiichiro Kihara
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Patent number: 4988895Abstract: A novel comparator circuit is disclosed, in which a pulse output is obtained from the output terminal of a differential amplifier through a transistor by applying a threshold voltage to either input terminal of a differential amplifier composed of a pair of transistors and then comparing an input voltage applied to the other input terminal therewith, wherein the aforementioned pair of transistors of the differential amplifier are each composed of two transistors connected in a complex manner, the input voltage is directly inputted, without the use of a buffer or the like, by raising the input impedance of the comparator circuit to thereby simplify the circuit as a whole and to widen its scope of application.Type: GrantFiled: June 22, 1990Date of Patent: January 29, 1991Assignee: Sharp Kabushiki KaishaInventors: Seiichiro Kihara, Zenpei Tani, Hisao Nagao
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Patent number: 4115832Abstract: An oscillator utilizing a negative resistance light emitting semiconductor diode is connected in series with voltage booster means which in turn provides a high voltage to electrodes of a gas igniter. Discharge of the gas between the electrodes occurs with the aid of the high voltage derived from the voltage booster means to thereby effect an ignition of the gas. Light emission from the diode in the absence of gas ignition is indicative of a deficiency in the supply of gas, while the absence of light emission in the absence of gas ignition is indicative of a deficiency in the operation of the oscillator circuit.Type: GrantFiled: December 15, 1976Date of Patent: September 19, 1978Assignee: Sharp Kabushiki KaishaInventors: Tutomu Nakamura, Junichiro Shigemasa, Zenpei Tani