Abstract: The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.

Abstract: The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.

Abstract: The present disclosure provides a two-dimensional material detector with an asymmetrically integrated optical microstrip antenna, structurally including a metal reflecting surface, a dielectric spacer layer, a two-dimensional active material layer, a top source electrode, and a drain electrode integrated with a metal strip array. Self-driven photoresponse of a metal/two-dimensional material/metal structure is induced by a Schottky junction formed due to contact between the two-dimensional material and the metal. The asymmetrically integrated optical microstrip antennas break the symmetry between the two contact/two-dimensional material junctions. Light absorption in the contact/two-dimensional material junction integrated with optical patch antennas is significantly enhanced by efficient light in-coupling and intensified light localization; meanwhile, the extended boundary of the contact/two-dimensional material junction enlarges the photocurrent collection area.