Abstract: In one embodiment, a self-powered tactile pressure sensor includes a flexible substrate, an array of piezoelectric crystalline nanorods each having a bottom end and a top end, the nanorods being generally perpendicular to the substrate, a top electrode that is electrically coupled to the top ends of the nanorods, and a bottom electrode that is electrically coupled to the bottom ends of the nanorods.

Abstract: In one embodiment, a self-powered tactile pressure sensor includes a flexible substrate, an array of piezoelectric crystalline nanorods each having a bottom end and a top end, the nanorods being generally perpendicular to the substrate, a top electrode that is electrically coupled to the top ends of the nanorods, and a bottom electrode that is electrically coupled to the bottom ends of the nanorods.

Abstract: The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer.

Abstract: The present invention provides a sensor (100, 300, 400) that includes a thin and substantially flat flexible substrate (102, 406) having one or more sensor arrays (104, 302), a power source (106, 416), an output interface (108, 418) and a processor or analog circuit (304), all of which are disposed on the substantially flat flexible substrate (102, 406). The substrate (102, 406) can be any shape (e.g., rectangular, circular, a polygon, an irregular shape that is decorative) and made from a polymer, metal film or other suitable material. Note that the substrate can be rigid or semi-flexible instead of flexible. A protective layer may cover the sensor array (104, 302), the power source (106, 416), and the processor or analog circuit (304). Alternatively, a protective covering can be used to encapsulate the device. The one or more sensor arrays (104, 302) measure acceleration, force or pressure.

Abstract: The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer.

Abstract: Microelectromechanical systems (MEMS) packages, packaged MEMS devices, and methods for making the same are disclosed. The method may include forming a chamber sacrificial layer above an insulating layer that is coupled to a wafer. The method further may include forming a packaging layer above the chamber sacrificial layer. The method additionally may include forming one or more openings through the packaging layer. The method also may include removing the chamber sacrificial layer through the one or more openings. The method may include forming a sealing layer above the packaging layer such that the sealing layer substantially seals the one or more openings to form a hermetic cavity.

Abstract: Microelectromechanical systems (MEMS) packages, packaged MEMS devices, and methods for making the same are disclosed. The method may include forming a chamber sacrificial layer above an insulating layer that is coupled to a wafer. The method further may include forming a packaging layer above the chamber sacrificial layer. The method additionally may include forming one or more openings through the packaging layer. The method also may include removing the chamber sacrificial layer through the one or more openings. The method may include forming a sealing layer above the packaging layer such that the sealing layer substantially seals the one or more openings to form a hermetic cavity.

Abstract: The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer.

Abstract: The present invention provides a CPR sensor that includes a thin and substantially flat flexible substrate having one or more sensor arrays, a power source, an output interface and a processor or analog circuit, all of which are disposed on the substantially flat flexible substrate. The substrate can be any shape (e.g., rectangular, circular, a polygon, an irregular shape that is decorative) and made from a polymer, metal film or other suitable material. Note that the substrate can be rigid or semi-flexible instead of flexible. A protective layer may cover the sensor array, the power source, and the processor or analog circuit. Alternatively, a protective covering can be used to encapsulate the device. The one or more sensor arrays measure one or more of the following compressions characteristics: compression depth, compression force, compression frequency and compression acceleration.

Abstract: Microelectromechanical systems (MEMS) packages, packaged MEMS devices, and methods for making the same are disclosed. The method may include forming a chamber sacrificial layer above an insulating layer that is coupled to a wafer. The method further may include forming a packaging layer above the chamber sacrificial layer. The method additionally may include forming one or more openings through the packaging layer. The method also may include removing the chamber sacrificial layer through the one or more openings. The method may include forming a sealing layer above the packaging layer such that the sealing layer substantially seals the one or more openings to form a hermetic cavity.

Abstract: The present invention provides a sensor (100, 300, 400) that includes a thin and substantially flat flexible substrate (102, 406) having one or more sensor arrays (104, 302), a power source (106, 416), an output interface (108, 418) and a processor or analog circuit (304), all of which are disposed on the substantially flat flexible substrate (102, 406). The substrate (102, 406) can be any shape (e.g., rectangular, circular, a polygon, an irregular shape that is decorative) and made from a polymer, metal film or other suitable material. Note that the substrate can be rigid or semi-flexible instead of flexible. A protective layer may cover the sensor array (104, 302), the power source (106, 416), and the processor or analog circuit (304). Alternatively, a protective covering can be used to encapsulate the device. The one or more sensor arrays (104, 302) measure acceleration, force or pressure.

Abstract: The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600° C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer.

Abstract: The invention is a nanoporous membrane exchanger.

Abstract: The present invention provides a CPR sensor that includes a thin and substantially flat flexible substrate having one or more sensor arrays, a power source, an output interface and a processor or analog circuit, all of which are disposed on the substantially flat flexible substrate. The substrate can be any shape (e.g., rectangular, circular, a polygon, an irregular shape that is decorative) and made from a polymer, metal film or other suitable material. Note that the substrate can be rigid or semi-flexible instead of flexible. A protective layer may cover the sensor array, the power source, and the processor or analog circuit. Alternatively, a protective covering can be used to encapsulate the device. The one or more sensor arrays measure one or more of the following compressions characteristics: compression depth, compression force, compression frequency and compression acceleration.

Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.

Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.

Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer.

Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer.