Patents by Inventor Zhang Lulu

Zhang Lulu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method thereof
    Patent number: 7579660
    Abstract: A semiconductor device includes a substrate including a semiconductor layer at a surface, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film. The gate electrode includes a conductive layer consisting of a nitride of a predetermined metal in contact with the gate insulating film. The conductive layer is formed by stacking a first film consisting of a nitride of the predetermined metal and a second film consisting of the predetermined metal, and diffusing nitrogen from the first film to the second film by solid-phase diffusion.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: August 25, 2009
    Assignees: Tokyo Electron Limited, Oki Electric Industry Co., Ltd.
    Inventors: Koji Akiyama, Zhang Lulu, Morifumi Ohno
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20070126062
    Abstract: A semiconductor device includes a substrate including a semiconductor layer at a surface, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film. The gate electrode includes a conductive layer consisting of a nitride of a predetermined metal in contact with the gate insulating film. The conductive layer is formed by stacking a first film consisting of a nitride of the predetermined metal and a second film consisting of the predetermined metal, and diffusing nitrogen from the first film to the second film by solid-phase diffusion.
    Type: Application
    Filed: November 16, 2006
    Publication date: June 7, 2007
    Inventors: Koji Akiyama, Zhang Lulu, Morifumi Ohno