Abstract: Tungsten-containing metal films may be deposited in recessed features of semiconductor substrates by electrodeposition. The tungsten-containing metal film is electrodeposited under conditions so that the tunsten-containing metal film is free or substantially free of oxide. Conditions are optimized during electrodeposition for pH, tungsten concentration, and current density, among other parameters. The tungsten-containing metal film may include cobalt tungsten alloy, cobalt nickel tungsten alloy, or nickel tungsten alloy, where a tungsten content in the tungsten-containing metal film is between about 1-20 atomic %.

Abstract: A process to extract metal ions and potentially other hazardous species present in solution to levels low enough to make it suitable for use and/or to quantify the levels of these contaminants in the solution. The process involves the use of functionalized magnetic particles to bind with metal ions. The process occurs in a three-chambered cell and utilizes a magnet to agglomerate the magnetic particles bound with metal ions to an electrode, and by altering the pH of the solution within the cell using gases produced by a solid state electrolyzer or from the air, encourages the plating of the metal ions on the electrode and the pushing out of the metal-free solution out of the cell.

Abstract: A process to extract metal ions and potentially other hazardous species present in solution to levels low enough to make it suitable for use and/or to quantify the levels of these contaminants in the solution. The process involves the use of functionalized magnetic particles to bind with metal ions. The process occurs in a three-chambered cell and utilizes a magnet to agglomerate the magnetic particles bound with metal ions to an electrode, and by altering the pH of the solution within the cell using gases produced by a solid state electrolyzer or from the air, encourages the plating of the metal ions on the electrode and the pushing out of the metal-free solution out of the cell.