Abstract: A transaction harmony degree-based method and system for transaction matching between a power grid and building energy. The method includes: obtaining a transaction harmony degree of a historical transaction cycle; sending, by using a blockchain, the transaction harmony degree to a corresponding building energy user, and sending a maximum compensated electricity price and an expected compensated electricity price in peak-valley regulation to all building energy users; determining, by each building energy user, a transaction-based compensated electricity price in the peak-valley regulation based on the received transaction harmony degree and the received maximum compensated electricity price and expected compensated electricity price in the peak-valley regulation, and feeding back the transaction-based compensated electricity price in the peak-valley regulation to a power grid; and determining, by the power grid, a building energy user that successfully performs transaction matching with the power grid.

Abstract: Disclosed are electronic glass having high liquidus viscosity and a preparation method. The proportions of the raw materials used in the electronic glass are: SiO2: 65.56-68.6%; Al2O3: 10.58-14%; B2O3: 7-11%; SrO: 0.27-3.26%; BaO: 7.20-10.12%; CaO: 0.22-1.22%; MgO: 0-1.05%; MgO+CaO+SrO+BaO<13%; and the liquidus viscosity of the electronic glass is greater than 200,000 poise. The minimum value of the temperature corresponding to a liquidus temperature reduction of 100,000 poise in the electronic glass is 22° C. The electronic glass has a strain point temperature of 670-739° C., a Young's modulus of 70-83 GPa, and a density of 2.38-2.45 g/cm3, the liquidus viscosity is ensured to be higher than 200,000 poise, the electronic glass is well suited to overflow downdraw forming, and a relatively low density value can be obtained.

Abstract: Disclosed are flexible glass and a preparation method therefor; weight proportions of the raw materials used in the flexible glass are: 60.04-63.01 parts silicon dioxide, 16.7-21.5 parts aluminum oxide, 12.93-19.85 parts boron oxide, 2.43-14.19 parts calcium carbonate, 0.16-2.07 parts magnesium oxide. 0.5-2.74 parts strontium carbonate and 0-4.16 parts barium nitrate. The method includes: step 1: pouring raw materials into a mixer, and uniformly mixing to form a mixture; step 2: adding the mixture into a glass furnace, heating to melt the glass, and the melted glass entering a platinum feeding channel for clarification and flowing into a tube drawing tunnel; step 3: drawing the liquid glass into a long glass tube; step 4: using a laser cutting machine to transversely and longitudinally cut the glass tube according to specification requirements, forming a glass sheet; step 5: inspecting the glass sheet, and preparing a flexible glass product.

Abstract: Provided is an apparatus for fabricating a flexible display screen. The apparatus for the flexible display screen includes a roller mechanism and a jig, wherein the jig includes a bearing surface configured to bear a flexible display panel, the bearing surface being a curved surface; and the roller mechanism includes a roller, an axis of the roller being parallel to an element line of the bearing surface, and the roller being configured to roll on the bearing surface along a directrix of the bearing surface.

Abstract: A wafer structure with an electroless plating metal connecting layer and a method for fabricating the same are proposed. A wafer has an active surface and an inactive surface opposite to the active surface. The active surface has a plurality of electrical connecting pads formed thereon. An insulating protective layer is formed on the active surface of the wafer and a plurality of openings are formed in the insulating protective layer to correspond to the electrical connecting pads, so that the electrical connecting pads are exposed. A plurality of electroless plating metal connecting layers are formed on the electrical connecting pads that are exposed through the openings, by electroless plating. Therefore, the electrical connecting process of the wafer is simplified and easily implemented. As a result, the production cost is reduced, the yield is raised, and mass production of high quality is ensured simultaneously.