Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.

Abstract: A control system includes one or more processors and one or more memories. The one or more memories store one or more computer programs that, when executed by the one or more processors, cause the one or more processors to obtain operation information of a movable platform performing an operation in a target area, determine at least one operation abnormal area of the movable platform performing the operation in the target area according to the operation information, determine a corresponding supplement operation path according to the at least one operation abnormal area, and control the movable flatform to perform a supplement operation based on the supplement operation path.

Abstract: The present disclosure provides an array substrate, an electronic device and a manufacturing method of the array substrate. The array substrate includes a base substrate, and a first transistor and a second transistor on the base substrate, a first electrode of the first transistor being connected to a second electrode of the second transistor; the array substrate further includes a photodiode including a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode, and the first electrode is electrically connected to a gate of the first transistor. In the arrangement, the first transistor and the second transistor are connected in series to form one control unit, and the uniformity and stability of the control unit are greatly improved.

Abstract: A system for testing an assist function of electric vehicle wireless power transfer includes: a pit, a vehicle-assembly support platform, and an electromagnetic field strength measurement instrument. A ground-assembly support platform is arranged inside the pit, the vehicle-assembly support platform is arranged on an upper side of the ground-assembly support platform, and a to-be-tested member is arranged on an upper side of the ground-assembly support platform. A ground-assembly device coil is arranged on an upper surface of the ground-assembly support platform, a vehicle-assembly device coil is arranged inside the vehicle-assembly support platform, the ground-assembly device coil charges an entire vehicle, and the ground-assembly device coil further cooperates with the vehicle-assembly device coil to charge a vehicle component. A mechanical arm is arranged on ground of a test site, an interference member is arranged on a front end of the mechanical arm.

Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.

Abstract: A system for testing an assist function of electric vehicle wireless power transfer includes: a pit, a vehicle-assembly support platform, and an electromagnetic field strength measurement instrument. A ground-assembly support platform is arranged inside the pit, the vehicle-assembly support platform is arranged on an upper side of the ground-assembly support platform, and a to-be-tested member is arranged on an upper side of the ground-assembly support platform. A ground-assembly device coil is arranged on an upper surface of the ground-assembly support platform, a vehicle-assembly device coil is arranged inside the vehicle-assembly support platform, the ground-assembly device coil charges an entire vehicle, and the ground-assembly device coil further cooperates with the vehicle-assembly device coil to charge a vehicle component. A mechanical arm is arranged on ground of a test site, an interference member is arranged on a front end of the mechanical arm.

Abstract: The present disclosure relates to a method and an apparatus for treating, sorting and recycling an oil-containing discharged catalyst. There is provided a method for treating, sorting and recycling an oil-containing discharged catalyst, wherein the method comprises the following steps: (A) cyclonic washing and on-line activation of a discharged catalyst; (B) cyclonic spinning solvent stripping of the catalyst; (C) gas stream acceleration sorting of a high activity catalyst; (D) cyclonic restriping and particle capture of the high activity catalyst; and (E) cooling of the gas and condensation removal of the solvent. There is further provided an apparatus for treating, sorting and recycling an oil-containing discharged catalyst.

Abstract: Non-natural sugars modified with a bioorthogonal reactive group are added into a culture medium of immune cells such as NK cells to obtain immune cells modified with the bioorthogonal reactive group; and then, under a physiological condition, a targeting ligand, for example, a nanobody, is modified to a surface of each of the immune cells through a bioorthogonal reaction, wherein the targeting ligand has one terminal with a bioorthogonal reactive pairing group which is capable of being matched and connected with the bioorthogonal reactive group to generate a connecting reaction, connection is implemented by a transpeptidase SrtA-mediated chemoenzymatic method. The targeting ligand highly specifically recognizes and binds to a highly expressed receptor on the surface of tumor cells. The immune cell modified with the targeting ligand can specifically bind in a targeted way to the tumor cells, therefore generating cytokines, killing and damaging tumor cells.

Abstract: The present disclosure relates to a method and an apparatus for treating, sorting and recycling an oil-containing discharged catalyst. There is provided a method for treating, sorting and recycling an oil-containing discharged catalyst, wherein the method comprises the following steps: (A) cyclonic washing and on-line activation of a discharged catalyst; (B) cyclonic spinning solvent stripping of the catalyst; (C) gas stream acceleration sorting of a high activity catalyst; (D) cyclonic restriping and particle capture of the high activity catalyst; and (E) cooling of the gas and condensation removal of the solvent. There is further provided an apparatus for treating, sorting and recycling an oil-containing discharged catalyst.

Abstract: A field emission tip includes a base with a central portion and a tapered portion. The central portion of the base includes a peripheral surface, at least a portion of which is oriented substantially vertically or perpendicularly relative to a plane in which a substrate from which the field emission tip protrudes resides. An apex may be located at an exposed end of the central portion of the base. The tapered portion of the base includes an inclined surface that extends toward the exposed end of the central portion of the base. The tapered portion of the base may be formed from material that is redeposited as the emission tip is fabricated. The apex may be formed, at least in part, from a low work function material, such as one or more of aluminum titanium silicide, titanium silicide nitride, titanium nitride, tri-chromium mono-silicon, and tantalum nitride. Field emission arrays and field emission displays that include such field emission tips are also disclosed.

Abstract: A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

Abstract: A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

Abstract: A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

Abstract: The present invention relates to field emitters and methods of fabricating the same wherein the field emission tips of the field emitters are formed by utilization of a facet etch. An etch mask is patterned on a conductive substrate in the locations desired for subsequently formed field emission tips. The conductive substrate is then anisotropically etched to translate the shape of the mask into the conductive substrate which forms a vertical column from the conductive substrate. The etch mask is then removed and the vertical column is facet etched to form the field emission tip. Low work function materials may also be incorporated into the field emission tips to improve field emission tip performance by depositing a layer of low work function material on the conductive substrate prior to patterning the etch mask.

Abstract: A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.