Abstract: An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.

Abstract: An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.

Abstract: An improved DPD system includes a predistortion module having at least one predistortion function. The predistortion module is configured to receive and subsequently process a baseband signal. The system also includes a power amplifier configured to receive the processed baseband signal from the predistortion module. The system further includes a model calculator configured to program priorities for predistortion functions so that the processed baseband signal transmitted from the predistortion module corresponds to the transmission power of the power amplifier. The model calculator is further configured to send a trigger signal to indicate when data capture from the power amplifier should begin so as to update the predistortion functions. A trigger module in the system is configured to receive the trigger signal and to initiate data capture from the power amplifier upon receipt of the trigger signal.

Abstract: An improved DPD system includes a predistortion module having at least one predistortion function. The predistortion module is configured to receive and subsequently process a baseband signal. The system also includes a power amplifier configured to receive the processed baseband signal from the predistortion module. The system further includes a model calculator configured to program priorities for predistortion functions so that the processed baseband signal transmitted from the predistortion module corresponds to the transmission power of the power amplifier. The model calculator is further configured to send a trigger signal to indicate when data capture from the power amplifier should begin so as to update the predistortion functions. A trigger module in the system is configured to receive the trigger signal and to initiate data capture from the power amplifier upon receipt of the trigger signal.

Abstract: The present invention concerns a high vacuum in-situ refining method for high-purity and superhigh-purity materials and the apparatus thereof, characterized in heating the upper part and lower part of crucible separately using double-heating-wires diffusion furnace under vacuum, thereby forming the temperature profile which is high at upper part and low at lower part of crucible, or in reverse during different stages; then heating the crucible in two steps to remove impurities with high saturation vapor pressure and low saturation vapor pressure respectively in efficiency; and obtaining high-purity materials eventually. The whole procedure is isolated from atmosphere, reducing contamination upon stuff remarkably. The present invention could provide products with high-quality and high production capacity, which are stable in performance, therefore is reliable and free from contamination.

Abstract: There is provided a method of manufacturing high quality ZnO manufacturing film on silicon (111) substrate, including the following steps: removing silicon oxide on the surface of silicon (111) substrate; depositing metal monocrystal film having 1-10 nm thickness, such as Mg, Ca, Sr, Cd etc, at low temperature; oxiding the metal film at low temperature to obstain metal oxide monocrystal layer; depositing ZnO buffer layer at low temperature; depositing ZnO epitaxial layer at high temperature. The ZnO film is suitable for fabrication of high performance of photoelectron device.

Abstract: The present invention concerns a high vacuum in-situ refining method for high-purity and superhigh-purity materials and the apparatus thereof, characterized in heating the upper part and lower part of crucible separately using double-heating-wires diffusion furnace under vacuum, thereby forming the temperature profile which is high at upper part and low at lower part of crucible, or in reverse during different stages; then heating the crucible in two steps to remove impurities with high saturation vapor pressure and low saturation vapor pressure respectively in efficiency; and obtaining high-purity materials eventually. The whole procedure is isolated from atmosphere, reducing contamination upon stuff remarkably. The present invention could provide products with high-quality and high production capacity, which are stable in performance, therefore is reliable and free from contamination.