Abstract: The present application discloses an OLED display panel and a manufacturing method thereof. The OLED display panel includes: a base layer, an active layer, a gate insulating layer, a first metal layer, and a second metal layer, wherein the active layer includes a channel portion, a source contact portion, a first electrode, and an anode; the second metal layer is arranged above the first metal layer and connected to the source contact portion; the insulating layer, the first metal layer, and the second metal layer are stacked, and an opening is defined in the insulating layer at the position corresponding to the anode.

Abstract: Methods and structures of a three-dimensional memory device are disclosed. In an example, the disclosed method comprises forming a plurality of dielectric stacks stacked on one another over a substrate to create a multiple-stack staircase structure. Each one of the plurality of dielectric stacks comprises a plurality of dielectric pairs arranged along a direction perpendicular to a top surface of the substrate. The method further comprises forming a filling structure that surrounds the multiple-stack staircase structure, forming a semiconductor channel extending through the multiple-staircase structure, wherein the semiconductor channel comprises unaligned sidewall surfaces, and forming a supporting pillar extending through at least one of the multiple-staircase structure and the filling structure, wherein the supporting pillar comprises aligned sidewall surfaces.

Abstract: Discussed are a flexible thin film transistor (TFT) substrate, a flexible display panel and a flexible display device. The flexible TFT substrate of the present application can improve bending resistance of the flexible TFT substrate by arranging a concave structure in the bonding region and placing an organic material in the concave structure. When the bonding region is bent, a width of the bonding region can be reduced. Accordingly, a bezel width of the flexible display panel including the flexible TFT substrate is reduced, and a narrow bezel design is realized.

Abstract: A holographic 3D display system based on virtual array splicing of a spatial light modulator includes a laser configured to generate a coherent light beam, first, second and third beam splitters, first and second reflectors, a shutter array, a spatial filter array, a solid lens, first and second light beam deflection elements and a spatial light modulator. The first and second beam splitters and the first reflector are configured to split the light beam generated by the laser into three parallel light beams to irradiate the shutter array. The shutter array is configured to control the three parallel light beams to sequentially pass therethrough according to a set time sequence. The three parallel light beams passing through the shutter array are expanded and collimated by the spatial filter array and the solid lens to form three parallel light beams with the same size and uniform intensity.

Abstract: A backplane structure containing a capacitor includes a substrate, a first conductive film disposes on the substrate, a second conductive member having one portion spaced apart from the first conductive film and another portion connected to the first conductive film, a third conductive film spaced apart from the first conductive film and the second conductive member, a fourth conductive member connected to the third conductive film, and a fifth conductive member having one portion connected to the fourth conductive member and another portion spaced apart from the second conductive member. The third conductive film is disposed between the first conductive film and the second conductive member in an insulation manner, and the second conductive member is disposed between the third conductive film, the fourth conductive member, and the fifth conductive member in an insulation manner.

Abstract: A display panel and an electronic device are disclosed. The display panel includes a metal oxide semiconductor layer disposed on a substrate. Part of a gate insulating layer is disposed on the metal oxide semiconductor layer. Part of a first metal layer is disposed on the gate insulating layer. The first metal layer includes a gate electrode. A protection layer is disposed on the gate electrode, the gate insulating layer, and the metal oxide semiconductor layer, and the protection layer is made of a metal oxide.

Abstract: A backplane structure containing a capacitor includes a substrate, a first conductive film disposes on the substrate, a second conductive member having one portion spaced apart from the first conductive film and another portion connected to the first conductive film, a third conductive film spaced apart from the first conductive film and the second conductive member, a fourth conductive member connected to the third conductive film, and a fifth conductive member having one portion connected to the fourth conductive member and another portion spaced apart from the second conductive member. The third conductive film is disposed between the first conductive film and the second conductive member in an insulation manner, and the second conductive member is disposed between the third conductive film, the fourth conductive member, and the fifth conductive member in an insulation manner.

Abstract: A display panel and a method of producing the display panel are disclosed. A pixel unit and an auxiliary power supply unit are disposed at a portion of the display panel corresponding to the display sub-areas, the auxiliary power supply unit is configured to supply a power to a cathode layer so that an voltage of each of the display sub-areas applied by the cathode layer is equal to or substantially equal to each other. The cathode layer has a first cathode and a second cathode. The auxiliary power supply unit has a power line and an auxiliary power supply electrode. The display panel has an improved display quality in this disclosure.

Abstract: A display panel and a method of producing the display panel are disclosed. A pixel unit and an auxiliary power supply unit are disposed at a portion of the display panel corresponding to the display sub-areas, the auxiliary power supply unit is configured to supply a power to a cathode layer so that an voltage of each of the display sub-areas applied by the cathode layer is equal to or substantially equal to each other. The cathode layer has a first cathode and a second cathode. The auxiliary power supply unit has a power line and an auxiliary power supply electrode. The display panel has an improved display quality in this disclosure.

Abstract: Provided are an ink jet printing organic light emitting diode display panel and a manufacturing method thereof. The method includes: sequentially forming a passivation layer and a planarization layer on a carrier substrate prepared with one pair of thin film transistors, wherein the passivation layer covers the one pair of thin film transistors; forming one pair of vias in the passivation layer and the planarization layer; forming one pair of anodes on the planarization layer, wherein the one pair of anodes are electrically connected to the one pair of thin film transistors through the one pair of vias in the passivation layer and the planarization layer; preparing an electrode separation layer between the one pair of anodes with Al2O3 or an organic photoresist material; forming a light emitting layer over the one pair of anodes by ink jet printing, wherein the light emitting layer covers the electrode separation layer.

Abstract: An inkjet printing OLED display panel and manufacturing method are provided. The method includes sequentially forming a passivation layer and a planarization layer on thin-film transistors on a glass substrate, and the passivation layer covers the thin-film transistors; forming vias both at the passivation layer and the planarization layer; forming anodes on the planarization layer, and the anodes are electrically connected to the thin-film transistors through the vias; depositing a pixel definition layer on the planarization layer, and the pixel definition layer covers the anodes; using a half-tone mask to define a pattern of the pixel definition layer such that a region of the pixel definition layer located above the anodes forms a notch, and a height of the pixel definition layer located between the anodes is decreased; using an inkjet printing technology to form a light-emitting layer in the notch of the pixel definition layer.

Abstract: Related to is the field of light-emitting panel manufacture, and a light-emitting panel and a method for manufacturing the same are provided, which aim to improve uniformity of light emission of an Organic Light-Emitting Diode (OLED) manufactured by Inkjet Printing (IJP). The light-emitting panel sequentially comprises an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. The method comprises forming a multilayer structure sequentially including an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. According to a size of an edge warp of a light-emitting area of the OLED, a light-shielding layer is designed at a corresponding position of the light-emitting area on the cover glass, and a position of a non-uniform edge is subjected to light-shielding processing, so that the problem of non-uniform light emission caused by the edge warp of the organic light-emitting layer is solved.

Abstract: A method for repairing a disconnecting signal line of a thin film transistor (TFT) array substrate including: providing a TFT array substrate with a disconnecting signal line; defining a through hole at an edge of an overlapping area of the repairing line and the disconnecting signal line; printing ink in the through hole, the ink completely covers the through hole, the ink contains a plurality of metal nanoparticles; and curing the ink to make the repairing line and the disconnecting signal line to be connected.

Abstract: A method for repairing a disconnecting signal line of a thin film transistor (TFT) array substrate including: providing a TFT array substrate with a disconnecting signal line; defining a through hole at an edge of an overlapping area of the repairing line and the disconnecting signal line; printing ink in the through hole, the ink completely covers the through hole, the ink contains a plurality of metal nanoparticles; and curing the ink to make the repairing line and the disconnecting signal line to be connected.

Abstract: The present disclosure relates to an OLED panel and a manufacturing method thereof. The OLED panel includes: a glass substrate; a TFT light shielding layer; a buffer layer, a semiconductor layer; a patterned gate insulating layer; a patterned first metal layer; a interlayer insulating layer; a patterned second metal layer; a passivation layer deposited on the second metal layer by atomic layer deposition; a color filter; a planarization layer, wherein the planarization layer is provided with an opening structure corresponding to a storage capacitor area; an anode; a pixel defining layer; a light emitting layer; and a cathode. The present disclosure further provides a manufacturing method of an OLED panel thereof. The OLED panel and the manufacturing method thereof of the present disclosure can effectively increase the storage capacitance of the OLED panel, reduce the design area of the storage capacitor, and improve the panel aperture ratio.

Abstract: The present disclosure provides a TFT substrate and a manufacturing method thereof and a manufacturing method of an OLED panel. In the manufacturing method of the TFT substrate of the present disclosure, firstly formed a first inter layer dielectric covering the gate and the active layer on the buffer layer, wherein material of the first inter layer dielectric is provided as silicon oxynitride; Further, forming a second inter layer dielectric on the first inter layer dielectric, wherein material of the second inter layer dielectric is provided as silicon oxide, which can prevent excessive hydrogen elements from being introduced into the active layer, improve the working stability of the TFT device. The TFT substrate of the present disclosure is manufactured by using the above manufacturing method of a TFT substrate, the gate and the active layer have stable performance, and the TFT device has better working stability.

Abstract: The present disclosure provides a transparent OLED display and a manufacturing method thereof. The manufacturing method of the transparent OLED display forms an active layer and a first storage capacitor electrode in the same process. The first storage capacitor electrode is made of the transparent metal oxide semiconductor material. A second storage capacitor electrode is manufactured by two photolithography processes so the second storage capacitor electrode is made of only a transparent conductive oxide material. A storage capacitor region where the first storage capacitor electrode and the second storage capacitor electrode are located is a transparent region. Thus, light transmittance and transparent display effect of the transparent OLED display is enhanced. Further, a terminal located in a peripheral region is formed and only made of the transparent conductive oxide material to prevent it from being corroded by water and oxygen. It enhances service life of the transparent OLED display.

Abstract: A ultraviolet (UV) pretreatment apparatus used in vacuum evaporation includes a housing having a curing chamber disposed inside the housing; an inlet disposed at one end of the housing and an outlet disposed at an opposite end of the housing; and a UV source disposed in the curing chamber. A light absorption layer is disposed on inner walls of the curing chamber.

Abstract: This disclosure discloses an array substrate and a manufacturing method, and a display device, the array substrate including: a channel layer; a gate insulating layer including a first portion and a second portion connected side by side, arranged on the channel layer, and exposing a source and drain contact zone on the channel layer, the second portion of the gate insulating layer being located on both sides of the first portion of the gate insulating layer; a gate layer, disposed on the first portion of the gate insulating layer; and a source and a drain, correspondingly connected to the contact region of the source and drain of the channel layer respectively. The array substrate of this disclosure solves the array substrate leakage problem caused by conductorizing the channel layer due to performing ion implantation to the channel layer.

Abstract: The present disclosure provides a TFT substrate and a manufacturing method thereof and a manufacturing method of an OLED panel. In the manufacturing method of the TFT substrate of the present disclosure, firstly formed a first inter layer dielectric covering the gate and the active layer on the buffer layer, wherein material of the first inter layer dielectric is provided as silicon oxynitride; Further, forming a second inter layer dielectric on the first inter layer dielectric, wherein material of the second inter layer dielectric is provided as silicon oxide, which can prevent excessive hydrogen elements from being introduced into the active layer, improve the working stability of the TFT device. The TFT substrate of the present disclosure is manufactured by using the above manufacturing method of a TFT substrate, the gate and the active layer have stable performance, and the TFT device has better working stability.