Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack on the substrate, a plurality of channel structures each extending vertically through the memory stack, and one or more isolation structures. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. An outmost one of the conductive layers toward the substrate is a source select gate line (SSG). Each isolation structure surrounds at least one of the channel structures in a plan view to separate the SSG and the at least one channel structure.

Abstract: A riding mowing device includes a frame; a cutting assembly; a traveling assembly configured to drive the riding mowing device to travel and including a first traveling assembly located on the front part of the riding mowing device and a second traveling assembly located on the rear part of the riding mowing device, where the first traveling assembly and the second traveling assembly are separately mounted on the frame; and a power supply assembly configured to supply power to at least the cutting assembly and the traveling assembly and mounted to the frame. The riding mowing device further includes one of a steering wheel assembly and an operating lever assembly, and one of the steering wheel assembly and the operating lever assembly is selectively mounted on the frame.

Abstract: An intermediate representation construction method is provided. The method includes: obtaining a first intermediate representation (IR), where the first IR includes a computing statement, the computing statement includes a tensor and an operator, an operation represented by the operator is performed by a computing unit, the computing unit is configured to perform an operation on data that is migrated through a first storage location and a second storage location sequentially, and the tensor is data that is used when the operation represented by the operator is performed; and generating a second IR based on the computing statement, where the second IR includes first data migration information and data segmentation information.

Abstract: An intermediate representation construction method is provided. The method includes: obtaining a first intermediate representation (IR), where the first IR includes a computing statement, the computing statement includes a tensor and an operator, an operation represented by the operator is performed by a computing unit, the computing unit is configured to perform an operation on data that is migrated through a first storage location and a second storage location sequentially, and the tensor is data that is used when the operation represented by the operator is performed; and generating a second IR based on the computing statement, where the second IR includes first data migration information and data segmentation information.

Abstract: A structure and formation method of a semiconductor device is provided. The method includes forming a first, a second, a third, and a fourth fin structures over a substrate. The method also includes forming a first spacer layer over sidewalls of the first and the second fin structures. The method further includes forming a second spacer layer over the first spacer layer and sidewalls of the third and the fourth fin structures. In addition, the method includes forming a first blocking fin between the first and the second fin structures. The first blocking fin is separated from the first fin structure by portions of the first spacer layer and the second spacer layer. The method includes forming a second blocking fin between the third and the fourth fin structures. The second blocking fin is separated from the third fin structure by a portion of the second spacer layer.

Abstract: A structure and formation method of a semiconductor device is provided. The method includes forming a first, a second, a third, and a fourth fin structures over a substrate. The method also includes forming a first spacer layer over sidewalls of the first and the second fin structures. The method further includes forming a second spacer layer over the first spacer layer and sidewalls of the third and the fourth fin structures. In addition, the method includes forming a first blocking fin between the first and the second fin structures. The first blocking fin is separated from the first fin structure by portions of the first spacer layer and the second spacer layer. The method includes forming a second blocking fin between the third and the fourth fin structures. The second blocking fin is separated from the third fin structure by a portion of the second spacer layer.