Patents by Inventor Zhenan Bao

Zhenan Bao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020155729
    Abstract: An encapsulated semiconductor device and method wherein an encapsulant material is deposited on the device in an environment that enhances device performance. Illustrative encapsulant materials are organic polymers, silicon polymers and metal/polymer-layered encapsulants. Encapsulant formation environments may include inert, reducing and ammonia gas environment. Further disclosed are an encapsulated transistor and a semiconductor device.
    Type: Application
    Filed: February 21, 2001
    Publication date: October 24, 2002
    Applicant: Lucent Technologies, Inc.
    Inventors: Kirk W. Baldwin, Zhenan Bao, Peter Mach, John A. Rogers
  • Patent number: 6452207
    Abstract: The specification describes a thin film transistor device in which the semiconductor layer is a fluorene oligomer having a molecular weight of less than 2000, and comprising from 1 to 10 fluorene ring units. These oligomers can be deposited by simple evaporation to give desirable semiconductor properties, e.g. high mobility.
    Type: Grant
    Filed: March 30, 2001
    Date of Patent: September 17, 2002
    Assignee: Lucent Technologies Inc.
    Inventor: Zhenan Bao
  • Publication number: 20020116983
    Abstract: An electronic odor sensor includes first and second amplifiers, a biasing network, and a device connected to receive the output signals from the first and second amplifiers. The device is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.
    Type: Application
    Filed: February 26, 2001
    Publication date: August 29, 2002
    Inventors: Zhenan Bao, Brian Keith Crone, Ananth Dodabalapur, Alan Gelperin, Howard Edan katz
  • Patent number: 6429040
    Abstract: An organic semiconducting material having bi-polar charge transport characteristics is described which may comprise the active layer of a field-effect transistor. The semiconducting material comprises a bi-polar polymeric film effective for hole or electron transport comprising a polymer having a conjugated framework with functional moieties capable of solvating ions or promoting ionic charge transport. The conjugated framework is selected from at least one of thiophene, pyrrole, benzene, naphthalene, antrhacene, and antrhacene-dione, and the functional moieties are selected from (i) functional side groups comprising salts of carboxylic acid and sulfonic acid and (ii) functional sites selected from heteroatoms having electron lone pairs comprising sulfur, nitrogen, and oxygen. The field-effect mobility of the bi-polar polymeric film is at least 10−3 cm2/Vs when operating as an n-type or p-type device.
    Type: Grant
    Filed: April 6, 2000
    Date of Patent: August 6, 2002
    Assignee: Agere Systems Guardian Corp.
    Inventors: Zhenan Bao, Xiaochen Linda Chen
  • Patent number: 6383665
    Abstract: The invention relates to poly(phenylene vinylene) polymers substituted with dendritic sidechains to enhance main-chain separation in the solid state. The polymers are synthesized by the Heck polymerization and have a weight-average molecular weight of 20,000 to 60,000 Daltons. The polymers are self-ordering in the solid state and have thermotropic liquid crystalline phases. The polymers show enhanced photoconductivity, better charge transport capability and improved polarized light emission.
    Type: Grant
    Filed: August 19, 1999
    Date of Patent: May 7, 2002
    Assignee: Lucent Technologies Inc.
    Inventors: Zhenan Bao, Karl R. Amundson, Xiaochen Linda Chen
  • Patent number: 6372532
    Abstract: An LED device that emits light in a pattern is disclosed. The LED device is a layer of active material that is sandwiched between a transparent substrate with an anode formed thereon and a cathode. The active material has a layer of light emitting material that emits light when electron/hole recombination is induced in the material. The patterned emission is defined by a patterned layer in the active material of the LED device. The patterned layer has at least a first thickness and a second thickness. When the device is on, the portion of the device associated with the first thickness of the patterned layer is visually distinct from the portion of the device that is associated with the second thickness of the patterned layer.
    Type: Grant
    Filed: January 5, 2001
    Date of Patent: April 16, 2002
    Assignee: Lucent Technologies, Inc.
    Inventors: Zhenan Bao, John A. Rogers
  • Patent number: 6322736
    Abstract: An improved elastomeric mold for use in fabricating microstructures, the mold having first and second surfaces, the first surface including at least one recessed microchannel and the second surface including an access opening or filling member that extends through the mold to the first surface and communicates with the recessed microchannel. The mold is used by placing it onto a substrate with the recessed microchannel facing the substrate. The access opening of the mold is filled with a liquid material which is capable of solidifying. The access opening continuously introduces the liquid material into the space defined between the microchannel and the substrate. After the liquid material solidifies, the mold is removed from the substrate thereby leaving a microstructure formed from the solidified liquid material on the substrate.
    Type: Grant
    Filed: September 9, 1999
    Date of Patent: November 27, 2001
    Assignee: Agere Systems Inc.
    Inventors: Zhenan Bao, John A. Rogers
  • Patent number: 6252253
    Abstract: An LED device that emits light in a pattern is disclosed. The LED device is a layer of active material that is sandwiched between a transparent substrate with an anode formed thereon and a cathode. The active material has a layer of light emitting material that emits light when electron/hole recombination is induced in the material. The patterned emission is defined by a patterned layer in the active material of the LED device. The patterned layer has at least a first thickness and a second thickness. When the device is on, the portion of the device associated with the first thickness of the patterned layer is visually distinct from the portion of the device that is associated with the second thickness of the patterned layer.
    Type: Grant
    Filed: June 10, 1998
    Date of Patent: June 26, 2001
    Assignee: Agere Systems Optoelectronics Guardian Corp.
    Inventors: Zhenan Bao, John A. Rogers
  • Publication number: 20010001485
    Abstract: An LED device that emits light in a pattern is disclosed. The LED device is a layer of active material that is sandwiched between a transparent substrate with an anode formed thereon and a cathode. The active material has a layer of light emitting material that emits light when electron/hole recombination is induced in the material.
    Type: Application
    Filed: January 5, 2001
    Publication date: May 24, 2001
    Inventors: Zhenan Bao, John A. Rogers
  • Patent number: 6150191
    Abstract: Thin film transistors in which the active layer is an ordered film of a phthalocyanine coordination compound with a field-effect mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity in the range of about 10.sup.-9 S/cm to about 10.sup.-7 S/cm at 20.degree. C. are disclosed. Examples of suitable pthalocyanines include copper phthalocyanine, zinc phthalocyanine, hydrogen phthalocyanine, and tin phthalocyanine. Thin film devices made of these materials have an on/off ratio of at least about 10.sup.4. It is advantageous if the device is fabricated using a process in which the substrate is heated to a temperature in the range of about 30.degree. C. to about 200.degree. C. when the film is formed thereon.
    Type: Grant
    Filed: December 1, 1998
    Date of Patent: November 21, 2000
    Assignee: Lucent Technologies Inc.
    Inventor: Zhenan Bao
  • Patent number: 6150668
    Abstract: A device in which one or more thin film transistors are monolithically integrated with a light emitting diode is disclosed. The thin film transistor has an organic semiconductor layer. The light emitting layer of the light emitting diode is also an organic material. The device is fabricated economically by integrating the fabrication of the thin film transistor and the light emitting diode on the substrate and by employing low cost fabrication techniques.
    Type: Grant
    Filed: September 8, 1999
    Date of Patent: November 21, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Zhenan Bao, Ananth Dodabalapur, Howard Edan Katz, Venkataram Reddy Raju, John A. Rogers
  • Patent number: 6107117
    Abstract: A process for fabricating thin film transistors in which the active layer is an organic semiconducting material with a carrier mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity less than about 10.sup.-6 S/cm at 20.degree. C. is disclosed. The organic semiconducting material is a regioregular (3-alkylthiophene) polymer. The organic semiconducting films are formed by applying a solution of the regioregular polymer and a solvent over the substrate. The poly (3-alkylthiophene) films have a preferred orientation in which the thiophene chains has a planar stacking so the polymer backbone is generally parallel to the substrate surface.
    Type: Grant
    Filed: December 20, 1996
    Date of Patent: August 22, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Zhenan Bao, Ananth Dodabalapur, Yi Feng, Venkataram Reddy Raju
  • Patent number: 6033202
    Abstract: An improved elastomeric mold for use in fabricating microstructures, the mold having first and second surfaces, the first surface including at least one recessed microchannel and the second surface including an access opening or filling member that extends through the mold to the first surface and communicates with the recessed microchannel. The mold is used by placing it onto a substrate with the recessed microchannel facing the substrate. The access opening of the mold is filled with a liquid material which is capable of solidifying. The access opening continuously introduces the liquid material into the space defined between the microchannel and the substrate. After the liquid material solidifies, the mold is removed from the substrate thereby leaving a microstructure formed from the solidified liquid material on the substrate.
    Type: Grant
    Filed: March 27, 1998
    Date of Patent: March 7, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Zhenan Bao, John A. Rogers
  • Patent number: 5969376
    Abstract: Thin film transistors in which the active layer is an ordered film of a pthalocyanine coordination compound with a field-effect mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity in the range of about 10.sup.-9 S/cm to about 10.sup.-7 S/cm at 20.degree. C. are disclosed. Examples of suitable pthalocyanines include copper pthalocyanine, zinc pthalocyanine, hydrogen pthalocyanine, and tin pthalocyanine. Thin film devices made of these materials have an on/off ratio of at least about 10.sup.4. It is advantageous if the device is fabricated using a process in which the substrate is heated to a temperature in the range of about 30.degree. C. to about 200.degree. C. when the film is formed thereon.
    Type: Grant
    Filed: August 23, 1996
    Date of Patent: October 19, 1999
    Assignee: Lucent Technologies Inc.
    Inventor: Zhenan Bao