Abstract: Embodiments in accordance with the present disclosure include methods, polymers, and complexes. For example, a method embodiments includes providing a solution including a disassembled supramolecular polymer and a bond disrupting agent, adding an antisolvent to the solution to precipitate the supramolecular polymer, and isolating the precipitated supramolecular polymer from the bond disrupting agent.

Abstract: Various aspects of the instant disclosure relate to pressure sensing methods and apparatuses. As may be implemented in accordance with one or more embodiments, an apparatus includes a plurality of structures having respective surface areas that are implemented to contact at least one of an electrode and other ones of the structures. The structures operate with the electrode to provide an electrical indication of pressure by effecting a change in the respective surface areas in response to an elastic compression or expansion of the structures, and providing a change in electrical impedance between the structures and the electrode based on the change in the respective surface areas.

Abstract: A sensor includes an organic thin-film transistor (OTFT) that operates under low voltage conditions in an aqueous environment. According to an example embodiment, an OTFT includes an organic channel that electrically connects source and drain electrodes, with a gate electrode separated from the channel by a dielectric layer. The channel, gate and dielectric layer are arranged to facilitate switching of the channel region to pass current between the source and drain electrodes, in response to a low voltage applied to the gate electrode, when the channel is exposed to an aqueous solution. The current that is passed is indicative of characteristics of the aqueous solution, and is used to characterize the same. For various implementations, the low voltage operation of the sensor facilitates such characterization with substantially no ionic conduction through an analyte in the aqueous solution.

Abstract: Sensors, sensing arrangements and devices, and related methods are provided. In accordance with an example embodiment, an impedance-based sensor includes a flexible dielectric material and generates an output based on pressure applied to the dielectric material and a resulting compression thereof. In certain embodiments, the dielectric material includes a plurality of regions separated by gaps and configured to elastically deform and recover in response to applied pressure.

Abstract: Sensors, sensing arrangements and devices, and related methods are provided. In accordance with an example embodiment, an impedance-based sensor includes a flexible dielectric material and generates an output based on pressure applied to the dielectric material and a resulting compression thereof. In certain embodiments, the dielectric material includes a plurality of regions separated by gaps and configured to elastically deform and recover in response to applied pressure.

Abstract: Various aspects as described herein are directed to skin-conformal sensor devices and methods of using the same. As consistent with one or more embodiments, a sensor device includes an upper portion and lower portion. The upper portion includes a plurality of layers including at least one sensor. The lower portion includes a layer of microstructures configured and arranged to interface with skin of a subject and to interlock the skin with the at least one sensor.

Abstract: A battery electrode includes an electrochemically active material and a binder covering the electrochemically active material. The binder includes a self-healing polymer and conductive additives dispersed in the self-healing polymer to provide an electrical pathway across at least a portion of the binder.

Abstract: Various methods and apparatuses involving salt-based compounds and related doping are provided. In accordance with one or more embodiments, a salt-based material is introduced to a semiconductor material, and is heated to generate a neutral compound that dopes the semiconductor material. Other embodiments are directed to semiconductor materials with such a neutral compound as an impurity that affects electrical characteristics therein.

Abstract: Input devices are provided. In accordance with an example embodiment, an input device includes an interface layer that flexes in response to pressure, a plurality of sense electrodes, a dielectric between the sense electrodes and the interface layer, and interconnecting circuitry. The dielectric compresses or expands in response to movement of the interface layer, and exhibits dielectric characteristics that vary based upon a state of compression of the dielectric. The interconnecting circuitry is to the sense electrodes and provides an output indicative of both the position of each sense electrode and an electric characteristic at each sense electrode that provides an indication of pressure applied to the dielectric adjacent the respective sense electrodes.

Abstract: Various aspects as described herein are directed to electronic skin pressure sensors and methods of using the same. As consistent with one or more embodiments, an apparatus includes an electronic skin pressure sensor and sensor circuitry. The electronic skin device is configured and arranged for differentiating between different mechanical stimuli including lateral stress and at least one additional mechanical stimuli. The sensor circuitry is configured and arranged to respond to the electronic skin pressure sensor by sensing a change in impedance due to the lateral stress.

Abstract: Apparatuses and methods, consistent with embodiments herein, are directed to an apparatus having a stretchable substrate and a plurality of nanostructures. While the plurality of nanostructures are adhered to the stretchable substrate, the stretchable substrate and the nanostructures are stretched and/or operate in a stretched mode in which the nanostructures are characterized by a resistance corresponding to a strain imparted due to the stretching. When the substrate is relaxed or the stretching otherwise lessened, the nanostructures continue to be characterized as a function of the strain and the corresponding resistance, with buckled segments of the nanostructures being adhered along a surface of the substrate.

Abstract: Provided herein are sorbents for carbon dioxide (CO2) capture, such as from natural gas and coal-fired power plant flue gases, and uses thereof.

Abstract: Provided are stretchable devices, methods of manufacturing the same, and electronic apparatuses including the stretchable devices. A stretchable device may include first and second material layers, each including an elastomeric polymer, and an organic layer that is disposed between the first and second material layers. The organic layer may include an organic semiconductor. As least one electrode element may be embedded in at least one of the first and second material layers. The at least one electrode element may be electrically connected to the organic layer. The stretchable device may be stretchable in a direction parallel to the organic layer. The stretchable device may be a transistor, and may further include a gate electrode.

Abstract: A single-walled carbon nanotube-based planar photodetector includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other; a plurality of single-walled carbon nanotubes, each of the plurality of single-walled carbon nanotubes contacting the first electrode and the second electrode; and an adsorbent attached to a surface of at least one of the plurality of single-walled carbon nanotubes, wherein the adsorbent is capable of doping the at least one of the plurality of single-walled carbon nanotubes by photo-excitation.

Abstract: In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below ?2.5 eV to effect such n-type doping.

Abstract: Various apparatuses, systems and methods involve high mobility materials. In accordance with one or more example embodiments, a material includes a conjugated molecule and a side chain bonded to the conjugated molecule. The side chain includes at least one of a siloxane-terminated unit and a derivative of a siloxane-terminated unit that enhance solubility of the conjugated molecule. Further, the side chain facilitates a ?-stacking distance between the conjugated molecules when stacked (e.g., in an organic semiconductor film), thereby facilitating carrier mobility between the conjugated molecules.

Abstract: Hierarchically porous graphitic (HPG) carbon is provided via improved methods. The first approach is based on forming a 3-D polymer network from a first precursor and a second precursor and carbonizing it. The carbon in the resulting carbon structure comes from the first precursor, while the second precursor volatizes to form the pores. However, the second precursor is temperature resistant, such that carbonization of the first precursor is underway when the second precursor volatizes. The second approach is based on forming a structured polymer from first and second precursors. More specifically, the second precursor forms a second polymer having a micelle structure and the first precursor forms a first polymer that coats the micelle structure of the second polymer. The structured polymer is carbonized. Here also the carbon in the resulting carbon structure comes from the first precursor, while the second precursor volatizes to form the pores.

Abstract: Input devices are provided. In accordance with an example embodiment, an input device includes an interface layer that flexes in response to pressure, a plurality of sense electrodes, a dielectric between the sense electrodes and the interface layer, and interconnecting circuitry. The dielectric compresses or expands in response to movement of the interface layer, and exhibits dielectric characteristics that vary based upon a state of compression of the dielectric. The interconnecting circuitry is coupled to the sense electrodes and provides an output indicative of both the position of each sense electrode and an electric characteristic at each sense electrode that provides an indication of pressure applied to the dielectric adjacent the respective sense electrodes.

Abstract: Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.

Abstract: Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.