Patents by Inventor Zheng G. Chen

Zheng G. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10566291
    Abstract: This disclosure relates to a structure for aligning layers of an integrated circuit (IC) structure that may include a first dielectric layer positioned above a semiconductor substrate having one or more active devices, a trench stop layer positioned above the first dielectric layer, a second dielectric layer positioned above the trench stop layer, and a plurality of metal-filled marking trenches extending vertically through the second dielectric layer and the trench stop layer and at least partially into the first dielectric layer. The metal-filled trenches are electrically isolated from any active devices contained in the IC.
    Type: Grant
    Filed: February 18, 2018
    Date of Patent: February 18, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ming Hao Tang, Yuping Ren, Rui Chen, Bradley Morgenfeld, Zheng G. Chen
  • Publication number: 20190259708
    Abstract: This disclosure relates to a structure for aligning layers of an integrated circuit (IC) structure that may include a first dielectric layer positioned above a semiconductor substrate having one or more active devices, a trench stop layer positioned above the first dielectric layer, a second dielectric layer positioned above the trench stop layer, and a plurality of metal-filled marking trenches extending vertically through the second dielectric layer and the trench stop layer and at least partially into the first dielectric layer. The metal-filled trenches are electrically isolated from any active devices contained in the IC.
    Type: Application
    Filed: February 18, 2018
    Publication date: August 22, 2019
    Inventors: Ming Hao Tang, Yuping Ren, Rui Chen, Bradley Morgenfeld, Zheng G. Chen
  • Patent number: 7479355
    Abstract: A mask design for enhancing line end resolution is provided. In an embodiment, a mask for use in patterning an underlying layer comprises opaque regions and transparent regions arranged to define a line having an end, a slit extending laterally through the line a spaced distance from the end of the line, and a feature extending above or below the space adjacent to the end of the line.
    Type: Grant
    Filed: February 27, 2008
    Date of Patent: January 20, 2009
    Assignee: International Business Machines Corporation
    Inventors: Zheng G. Chen, Allen H. Gabor
  • Patent number: 6933191
    Abstract: MIM capacitors and thin film resistors are fabricated with at least one less lithographic step than the prior art methods. The process step reduction is realized by using semi-transparent metallic electrodes, fabricated with a two-mask process, which provides for direct alignment, and eliminates the need for alignment trenches in an additional layer.
    Type: Grant
    Filed: September 18, 2003
    Date of Patent: August 23, 2005
    Assignee: International Business Machines Corporation
    Inventors: Glenn A. Biery, Zheng G. Chen, Timothy J. Dalton, Naftali E. Lustig
  • Publication number: 20030027419
    Abstract: A method for forming interconnect dual damascene structures comprising: first, performing a low-k dielectric spin-on; wherein the low-k dielectric is photosensitive and is copper; second, forming trench and vias in the low-k dielectric with a tri-tone mask; and third, applying a liner deposition in the trench and vias; wherein the tri-tone mask comprises a plurality of transmissions, wherein the transmissions of the tri-tone mask is in the range of 0% to 100%. The transmission of the tri-tone mask further comprises a transmission of 0% corresponding to non-erosion regions of the dielectric. Moreover, the transmission of the tri-tone mask further comprises a transmission of 100% corresponding to via regions of the dielectric. Furthermore, the range of 0% to 100% corresponds to trench regions of the dielectric.
    Type: Application
    Filed: August 2, 2001
    Publication date: February 6, 2003
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Zheng G. Chen