Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

Abstract: A detection system includes a loadcell connected to a gear and motor of a crystal puller apparatus to measure force applied to the gear in a time domain. The data is analyzed though a Fourier transform to obtain data in the frequency domain. The frequency domain data includes an amplitude which corresponds to mechanical wear of the gear. The time domain data is compared against a threshold amplitude to determine if the gears have mechanical wear such that preventative maintenance can be performed on the motor.

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.

Abstract: Ingot puller apparatus that include a silicon feed tube for adding solid silicon to a crucible assembly are disclosed. The silicon feed tubes include a conduit portion having an inner diameter and a kick plate disposed below the conduit portion. The kick plate extends across at least 60% of the inner diameter of the conduit portion.

Abstract: Various methods and systems are provided for a table support for a mobile imaging system. In one example, a table support for a mobile imaging system includes a fixture comprising a frame and a plurality of posts coupled to the frame, a table interface comprising a set of table flanges configured to be attached to a patient table of the mobile imaging system and a set of complementary table flange acceptors coupled to a top surface of the frame of the fixture, and a floor interface including a set of floor brackets removably coupleable to a set of floor panels configured to be attached to a floor of a unit configured to house the mobile imaging system, each floor bracket coupled to two respective posts of the plurality of posts.

Abstract: Provided herein is an alkane dehydrogenation catalyst, a method of manufacturing an alkane dehydrogenation catalyst, and a method of converting alkanes to alkenes.

Abstract: A method for determining a performance of a subgrade of an expressway section and a processing device thereof are used to accurately calculate a stress, a displacement, a velocity and an acceleration at any position inside the subgrade while analyzing the performance of the subgrade of the target expressway section, in full consideration of the moving speed and vibration characteristics of the vehicle load, the layered characteristics of the expressway and the unsaturated characteristics of the subgrade soil.

Abstract: A method for determining mechanical performance of the road includes the following: acquiring an initial subgrade reaction modulus ks of a subgrade of a target road section by using a field plate-bearing test process; acquiring a preset load p of the subgrade and geocell parameters of a preset geocell of the subgrade; calculating a composite subgrade reaction modulus kr of the subgrade on condition that the roadbed is under a reinforced working condition by a composite modulus calculation formula; calculating an equivalent thickness RP of the roadbed under the reinforced working condition by a depth adjustment calculation formula; and outputting the composite subgrade reaction modulus kr and the equivalent thickness RP.

Abstract: Provided herein is an alkane dehydrogenation catalyst, a method of manufacturing an alkane dehydrogenation catalyst, and a method of converting alkanes to alkenes.

Abstract: A state assessment system, a diagnosis and treatment system and a method for operating the diagnosis and treatment system are disclosed. An oscillator model converts a physiological signal of a subject into a defined feature image. A classification model analyzes state information of the subject based on the feature image. An analysis model outputs a treatment suggestion for the subject based on the state information of the subject. An AR projection device projects acupoint positions of a human body onto the subject, for the subject to be treated based on the treatment suggestion.

Abstract: Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed. The methods involve evaluating different substrates of the epitaxial wafers by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which substrates are well-suited for epitaxial and/or post-epi heat treatments.

Abstract: Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.

Abstract: A device and method for a user equipment (UE) to implement power savings mechanisms when operating within a significant location. The UE identifies that the UE is at a significant location. The significant location is a location relative to a currently camped cell of a network. At a first time and at the significant location, the UE performs a type of operation related to the network connection. The UE stores information corresponding to the performance of the type of operation at the first time in a profile associated with the significant location. At a second time and at the significant location, the UE performs the type of operation related to the network connection. The performance of the type of operation at the second time is modified based on the information stored in the profile associated with the significant location.

Abstract: A system for producing a silicon ingot, the system includes a crystal puller, a pyrometer, an infrared (IR) camera, and a controller. The crystal puller includes a hot zone having one or more components therein, and in which a silicon ingot may be pulled. The pyrometer is positioned to view a region of interest within the hot zone. The IR camera is positioned to view one or more additional regions of interest within the hot zone. The controller is connected to the crystal puller, the pyrometer, and the IR camera. The controller is programmed to control the crystal puller to produce a silicon ingot, receive temperature data of the region of interest within the hot zone from the pyrometer while producing the silicon ingot, and receive IR images of the one or more additional regions of interest from the IR camera while producing the silicon ingot.

Abstract: A method for growing a single crystal silicon ingot by the Czochralski method having reduced deviation in diameter is disclosed.

Abstract: A computer-assisted needle insertion system and a computer-assisted needle insertion method are provided. The computer-assisted needle insertion method includes: obtaining a first machine learning (ML) model and a second ML model; obtaining a computed tomography (CT) image and a needle insertion path, generating a suggested needle insertion path according to the first ML model, the CT image, and the needle insertion path, and instructing a needle to approach a needle insertion point on a skin of a target, wherein the needle insertion point is located on the suggested needle insertion path; obtaining a breath signal of the target, and estimating whether a future breath state of the target is normal according to the second ML model and the breath signal; and outputting a suggested needle insertion period according to the breath signal in response to determining that the future breath state is normal.

Abstract: A device and method for a user equipment (UE) to implement power savings mechanisms when operating within a significant location. The UE identifies that the UE is at a significant location. The significant location is a location relative to a currently camped cell of a network. At a first time and at the significant location, the UE performs a type of operation related to the network connection. The UE stores information corresponding to the performance of the type of operation at the first time in a profile associated with the significant location. At a second time and at the significant location, the UE performs the type of operation related to the network connection. The performance of the type of operation at the second time is modified based on the information stored in the profile associated with the significant location.

Abstract: A method for realizing interaction between a business system and at least one component. Steps include configuring at least one component in a frame system; displaying the frame system configured with the components on the front page of the main business system; by clicking on components displayed on the front page of the main business system, a user jumping from the main business system and logging to a front page of another business system defined by each of the clicked components.

Abstract: Provided herein is an alkane dehydrogenation catalyst, a method of manufacturing an alkane dehydrogenation catalyst, and a method of converting alkanes to alkenes.

Abstract: Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.