Abstract: A multi-gas-source heater is disclosed including a main shell, an ignition apparatus, a pipeline system arranged on the main shell, a temperature-sensing valve, a burner and a switching valve; the pipeline system has a first and second communication states; the temperature-sensing valve is connected to the pipeline system and can regulate flow of output gas; the burner includes a first and second nozzles both connected to the pipeline system; the ignition apparatus is connected to and can ignite the burner; the switching valve is connected to and can switch the pipeline system between the first and second communication states; when the switching valve switches the pipeline system to the first communication state, the first nozzle outputs the gas; when the switching valve switches the pipeline system to the second communication state, the second nozzle outputs the gas, or the first and second nozzles both output the gas.

Abstract: The disclosure provides a chip package and an electronic device. The chip package includes: a package substrate, a semiconductor substrate provided on the package substrate and a first chip and a second chip provided on the semiconductor substrate. The semiconductor substrate includes a first group of pins and a second group of pins arranged on the semiconductor substrate and a connecting layer located between the first group of pins and the second group of pins. The connecting layer has a plurality of connecting channels, and the first group of pins and the second group of pins are connected through the plurality of connecting channels. The first chip has a third group of pins, the second chip has a fourth group of pins, and the third group of pins are connected to the first group of pins, and the fourth group of pins are connected to the second group of pins.

Abstract: The disclosure provides a chip package and an electronic device. The chip package includes: a package substrate, a semiconductor substrate provided on the package substrate and a first chip and a second chip provided on the semiconductor substrate. The semiconductor substrate includes a first group of pins and a second group of pins arranged on the semiconductor substrate and a connecting layer located between the first group of pins and the second group of pins. The connecting layer has a plurality of connecting channels, and the first group of pins and the second group of pins are connected through the plurality of connecting channels. The first chip has a third group of pins, the second chip has a fourth group of pins, and the third group of pins are connected to the first group of pins, and the fourth group of pins are connected to the second group of pins.

Abstract: Embodiments of a shortwave infrared organic photodiode (IR) are disclosed. The IR includes a substrate layer. The IR includes a first electrode layer, the first electrode layer disposed on the substrate layer. The IR includes a first interfacial layer, the first interfacial layer disposed on the first electrode layer. The IR includes a bulk heterojunction, the bulk heterojunction disposed on the first interfacial layer. The bulk heterojunction may include an additive with a dielectric constant above a threshold value. The IR includes a second interfacial layer, the second interfacial layer disposed on the bulk heterojunction. The IR includes a second electrode layer, the second electrode layer disposed on the second interfacial layer.

Abstract: In an example of a method for recovering lead from a lead material including lead sulfide, methane sulfonic acid is selected as a leaching acid for the lead material. The lead material is exposed to a solution including the methane sulfonic acid and i) ferric methane sulfonate or ii) oxygen, which leaches lead from the lead sulfide in the lead material, and generates a liquid leachate including a lead-methane sulfonate salt. The liquid leachate is purified, and lead is recovered from the purified liquid leachate using electrolysis.

Abstract: In an example of a method for recovering lead from a mixed oxidized lead material, methane sulfonic acid is selected as a leaching acid for the mixed oxidized lead material. The mixed oxidized lead material is exposed to a solution including the methane sulfonic acid, which leaches lead from any of a lead oxide or a lead carbonate in the mixed oxidized lead material, and generates a liquid leachate including a lead-methane sulfonate salt. The liquid leachate is purified, and lead is recovered from the purified liquid leachate using electrolysis.

Abstract: In an example of a method for recovering lead from a mixed oxidized lead material, methane sulfonic acid is selected as a leaching acid for the mixed oxidized lead material. The mixed oxidized lead material is exposed to a solution including the methane sulfonic acid, which leaches lead from any of a lead oxide or a lead carbonate in the mixed oxidized lead material, and generates a liquid leachate including a lead-methane sulfonate salt. The liquid leachate is purified, and lead is recovered from the purified liquid leachate using electrolysis.

Abstract: In an example of a method for recovering lead from a lead material including lead sulfide, methane sulfonic acid is selected as a leaching acid for the lead material. The lead material is exposed to a solution including the methane sulfonic acid and i) ferric methane sulfonate or ii) oxygen, which leaches lead from the lead sulfide in the lead material, and generates a liquid leachate including a lead-methane sulfonate salt. The liquid leachate is purified, and lead is recovered from the purified liquid leachate using electrolysis.