Abstract: The present disclosure provides methods and systems for estimating and compensating the aging of light emitting elements in a display panel. In one example, a method for compensating aging of light emitting elements in a display panel is disclosed. A luminance target is determined based on historical luminance losses of a plurality of light emitting elements in the display panel. An adjusted luminance loss of one of the plurality of light emitting elements is determined based on a current and a luminance loss of the light emitting element. A compensation factor of the light emitting element is determined based on the adjusted luminance loss of the light emitting element and the luminance target. A compensated current is provided to the light emitting element based on the current and the compensation factor of the light emitting element.

Abstract: The present disclosure provides methods and systems for estimating and compensating the aging of light emitting elements in a display panel. In one example, a method for compensating aging of light emitting elements in a display panel is disclosed. A luminance target is determined based on historical luminance losses of a plurality of light emitting elements in the display panel. An adjusted luminance loss of one of the plurality of light emitting elements is determined based on a current and a luminance loss of the light emitting element. A compensation factor of the light emitting element is determined based on the adjusted luminance loss of the light emitting element and the luminance target. A compensated current is provided to the light emitting element based on the current and the compensation factor of the light emitting element.

Abstract: The present disclosure provides a method for determining a grayscale mapping correlation in a display panel. The method includes the following operations. First, a target first luminance value of the display panel is determined. A first set of start pixel values of a first attribute of a first grayscale value is determined based on the first grayscale value and the target first luminance value of the display panel. A first set of mapped pixel values of the first attribute mapped to the first grayscale value, and a first mapped luminance value are then determined based on the first set of start pixel values of the first attribute and a set of first target values of a second attribute. The set of first target values of the second attribute include a plurality of target chrominance values and the target first luminance value.

Abstract: The present disclosure provides a method for determining a grayscale mapping correlation in a display panel. The method includes the following operations. First, a target first luminance value of the display panel is determined. A first set of start pixel values of a first attribute of a first grayscale value is determined based on the first grayscale value and the target first luminance value of the display panel. A first set of mapped pixel values of the first attribute mapped to the first grayscale value, and a first mapped luminance value are then determined based on the first set of start pixel values of the first attribute and a set of first target values of a second attribute. The set of first target values of the second attribute include a plurality of target chrominance values and the target first luminance value.

Abstract: The present disclosure provides a method for determining an overdrive mapping correlation in a display panel. The method includes the following steps. First, a repeating subpixel arrangement is determined. The subpixel arrangement includes at least three sets of subpixels in the display panel. An ideal luminance value of a pattern of the subpixel arrangement is then determined. The pattern includes at least a first set of subpixels displaying a zero pixel value, a second set of subpixels displaying a first nonzero pixel value, and a third set of subpixels displaying a second nonzero pixel value, the first, second and third sets of subpixels respectively arranged one after another. The first nonzero pixel value may be different from the second nonzero gray scale value. An actual luminance value of the pattern of the subpixel arrangement is then determined. An overdrive pixel value is further determined.

Abstract: Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.

Abstract: Tandem solar cells comprising two or more solar cells connected in a solar cell stack via pn diode tunnel junctions and methods for fabricating the tandem solar cells using epitaxial lift off and transfer printing are provided. The tandem solar cells have improved tunnel junction structures comprising a current tunneling layer integrated between the p and n layers of the pn diode tunnel junction that connects the solar cells.

Abstract: Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

Abstract: Power generators that incorporate porous electric generation layers composed of mechanoradical-forming polymers are provided. Also provided are methods for using the generators to convert mechanical energy into and electrical signal to power electronic devices. The porous electric generation material includes an organic polymer that forms free radicals when covalent bonds are homolytically ruptured upon the application of a compressive force to the porous structure.

Abstract: Superlattice structures composed of single-crystal semiconductor wells and amorphous barriers are provided. Also provided are methods for fabricating the superlattice structures and electronic, optoelectronic, and photonic devices that include the superlattice structures. The superlattice structures include alternating quantum barrier layers and quantum well layers, the quantum barrier layers comprising an amorphous inorganic material and the quantum well layers comprising a single-crystalline semiconductor.

Abstract: The present invention provides flexible devices, such as integrated circuits, having a multilevel electronic device structure including two or more electronic components. The electronic components within the structure are electrically connected by an interconnect structure having multiple interconnect levels. In addition to the multilevel electronic device structure, the flexible devices include an elastomeric material disposed around the interconnect levels, including within the spaces between the interconnect levels.

Abstract: Micrometer-scale x-ray photodetectors that utilize a flexible array of photodiodes wrapped around the circumference of a scintillator core are provided. The photodetectors use dense and flexible pixelated arrays of photodiodes disposed around the circumference of a crystalline scintillator to provide highly compact photodetectors with high spatial, temporal, and energy resolution.

Abstract: Photoreceptor scaffolds that can be used for transplantation of organized photoreceptor tissue, with or without retinal pigment epithelial cells, which may improve grafted cell survival, integration, and functional visual rescue are disclosed herein. The scaffolds include a cell support layer having at least one cube-shaped reservoir fluidly connected to a plurality of through-holes and at least one cell in the at least one cube-shaped reservoir.

Abstract: P-N diodes that include p-type doped diamond and devices, such as p-n-p heterojunction bipolar transistors, that incorporate the p-n diodes are provided. In the p-n diodes, the diamond at the p-n junction has a positive electron affinity and is passivated by a thin layer of inorganic material that provides a tunneling layer that passivates the bonding interface states, without hindering carrier transport across the interface.

Abstract: Superlattice structures composed of single-crystal semiconductor wells and amorphous barriers are provided. Also provided are methods for fabricating the superlattice structures and electronic, optoelectronic, and photonic devices that include the superlattice structures. The superlattice structures include alternating quantum barrier layers and quantum well layers, the quantum barrier layers comprising an amorphous inorganic material and the quantum well layers comprising a single-crystalline semiconductor.

Abstract: Patterning methods for forming patterned device substrates are provided. Also provided are devices made using the methods. The methods utilize photoresist features have re-entrant profiles to form a secondary metal hard mask that can be used to pattern an underlying device substrate.

Abstract: Piezoresistive composite materials comprising electrically conductive particles in a polymeric phase change material are provided. Also provided are strain sensors incorporating the composites and methods for detecting mechanical strain using the composites.

Abstract: Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.