Patents by Inventor Zhihua Dong
Zhihua Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128518Abstract: An electrode assembly and a lithium ion electric roll having the same are provided. The electrode assembly includes: a first electrode unit; a first anti-puncture cushion; in which the first electrode unit includes a first electrode sheet, an second electrode sheet, and a separator, the second electrode sheet comprises a second top edge and a second bottom edge along the length direction of the first electrode unit; an edge of the first anti-puncture cushion exceeds the second electrode sheet from the second top edge or the second bottom edge along the length direction of the first electrode unit.Type: ApplicationFiled: December 22, 2023Publication date: April 18, 2024Applicant: DONGGUAN AMPEREX TECHNOLOGY LIMITEDInventors: Junliang ZHU, Haibing WANG, Tongming DONG, Wenqiang CHENG, Baohua CHEN, Shufeng WU, Wei YANG, Zhihua QIN, Meina LIN
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Patent number: 11961479Abstract: A display device and a method for driving the display device are described, where the display device includes a plurality of pixel island groups, a plurality of lenses, a positioning module, and a gate driving chip. The plurality of pixel island groups are arranged in array, wherein each of the pixel island groups includes a plurality of pixel islands, and different pixel islands are able to be scanned in different scanning modes. The positioning module is configured to determine a gaze area and a non-gaze area according to gazed coordinates of human eye. The gate driving chip is configured to provide gate driving signals in a first driving manner to sub-pixel units in the gaze area, and provide gate driving signals simultaneously in a second driving manner to sub-pixel units in the non-gaze area during a scanning stage of the sub-pixel units in the non-gaze area.Type: GrantFiled: December 22, 2020Date of Patent: April 16, 2024Assignees: Beijing BOE Optoelectronics Technology Co., Ltd., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Tiankuo Shi, Wei Sun, Yifan Hou, Zhihua Ji, Xiaomang Zhang, Rui Liu, Jigang Sun, Yuxin Bi, Xue Dong
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Patent number: 11946062Abstract: A gene PpHSP21 with black spot disease resistance is isolated from Pyrus pyrifolia. A nucleotide sequence of the gene PpHSP21 is shown in SEQ ID NO. 1. An amino acid sequence of an encoded protein of the PpHSP21 gene is shown in SEQ ID NO. 2. By constructing the plant overexpression vector and silencing vector of the gene PpHSP21, the gene PpHSP21 is introduced into the plant by the Agrobacterium-mediated genetic transformation method, so that the gene PpHSP21 is able to be overexpressed in the plants, thereby significantly improving black spot disease resistance in plants. The discovery and identification of the gene PpHSP21 provide new genetic resources for stress resistance molecular design and breeding in plants, and to provide new genetic resources for the implementation of green agriculture. The development and utilization of the genetic resources is conducive to reducing agricultural production costs and achieving environmental friendliness.Type: GrantFiled: July 30, 2021Date of Patent: April 2, 2024Assignee: NANJING AGRICULTURAL UNIVERSITYInventors: Shaoling Zhang, Xiaosan Huang, Caihua Xing, Qinghai Qiao, Zhihua Xie, Likun Lin, Kaijie Qi, Huizhen Dong
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Publication number: 20240071280Abstract: A display method comprises: acquiring multiple frames of images to be displayed, one frame of two adjacent frames of the images to be displayed being an image in an odd-numbered row, the other frame being an image in an even-numbered row, the resolution of the image in the odd-numbered row being M*(a*N), the resolution of the image in the even-numbered row being M*(a*N) or (M?1)*(a*N), and a being 1 or 2; and causing an odd-numbered display group to display the image in the odd-numbered row, and causing an even-numbered display group to display the image in the even-numbered row, the odd-numbered display group comprising M*(a*N) odd-numbered display units, the even-numbered display group comprising (M?1)*(a*N) even-numbered display units, the odd-numbered display unit in the i-th row comprising a first sub-pixel, a second sub-pixel, and a third sub-pixel in a pixel unit in the i-th row.Type: ApplicationFiled: July 8, 2022Publication date: February 29, 2024Inventors: Tiankuo SHI, Xin DUAN, Minglei CHU, Wei SUN, Xiaomang ZHANG, Shuo ZHANG, Zhihua JI, Yan SUN, Xue DONG
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Patent number: 11398566Abstract: An enhancement-mode III-V HEMT based on an all-solid-state battery is provided. In which, a second semiconductor layer and a first semiconductor layer are sequentially formed on a substrate, and a heterostructure is formed between the second semiconductor layer and the first semiconductor layer; a source electrode is electrically connected to a drain electrode through a 2DEG generated in the heterostructure; a gate electrode is used to control on-off of the 2DEG in the heterostructure; and an all-solid-state battery is arranged between the source electrode and the gate electrode, is composed of at least one group of battery units connected in series or connected in series and parallel, and is used to deplete the 2DEG in a corresponding region of the heterostructure.Type: GrantFiled: April 15, 2019Date of Patent: July 26, 2022Assignee: HANGZHOU DIANZI UNIVERSITYInventors: Zhihua Dong, Zhiqun Cheng, Shiqi Li, Guohua Liu, Hui Liu, Jian Li
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Publication number: 20210126119Abstract: An enhancement-mode III-V HEMT based on an all-solid-state battery is characterized in that a second semiconductor layer and a first semiconductor layer are sequentially formed on a substrate, and a heterostructure is formed between the second semiconductor layer and the first semiconductor layer; a source electrode is electrically connected to a drain electrode through a 2DEG generated in the heterostructure; a gate electrode is used to control on-off of the 2DEG in the heterostructure; and an all-solid-state battery is arranged between the source electrode and the gate electrode, is composed of at least one group of battery units connected in series or connected in series and parallel, and is used to deplete the 2DEG in a corresponding region of the heterostructure. The present invention can effectively achieve an enhanced operating mode.Type: ApplicationFiled: April 15, 2019Publication date: April 29, 2021Inventors: ZHIHUA DONG, ZHIQUN CHENG, SHIQI LI, GUOHUA LIU, HUI LIU, JIAN LI
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Patent number: 10691509Abstract: A desired state system monitors an activity of a first product operating on a machine. The desired state system determines a second product that is connected to the first product. The first product and the second product are both part of a family of products. The desired state system determines an activity of the second product installed on the machine, and a desired activity of the second product on the machine. The activity of the second product is compared with the desired activity of the second product. The desired state system generates a customized message based on the comparison at the machine.Type: GrantFiled: July 16, 2018Date of Patent: June 23, 2020Assignee: Microsoft Technology Licensing, LLCInventors: Arwa Zoher Tyebkhan, Carlos G Perez, Yee Hay Jonathan Leung, John R Selbie, Tai Jonah Enrico, Zhihua Dong
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Patent number: 10602332Abstract: The ability for an organization's administrator to customize assets and content that, their users have access to is a substantial capability. This capability is not just to facilitate delivery of the correct content to the relevant audience, but is also important to ensure that the content is appropriate for the endpoint. The administrator may curate organizational links that are provided as a hierarchical directory of sites and applications for the organization. Embodiments are directed to programming the organizational links that propagate to mobile applications. A server side application programming interface (API) may be provided to access a organization's curated links, a web user experience may be provided to enable the administrator to manage and curate the organizational links, and a mobile-specific user experience may be provided for viewing the links in a manner that enables quick access to the most relevant content to users of the organization.Type: GrantFiled: October 20, 2016Date of Patent: March 24, 2020Assignee: Microsoft Technology Licensing, LLCInventors: Zhihua Dong, Nathaniel T. Clinton, David M. Cohen, Kin Man Yau, Quanjie Lin, Andrew C. Haon
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Patent number: 10601938Abstract: Among other things, embodiments of the present disclosure help improve the functionality of electronic messaging software and systems by providing selective push notifications to users of such systems in response to new content being published. Embodiments of the present disclosure may provide notifications to some users based on the relevance of published content to such users, while abstaining from notifying users for whom the content is irrelevant.Type: GrantFiled: April 12, 2017Date of Patent: March 24, 2020Assignee: Microsoft Technology Licensing, LLCInventors: Andrew Haon, Nathaniel Terrell Clinton, Dmitriy Meyerzon, Adri Verlaan, Nikita Voronkov, Jeffrey L. Wight, Kristen Kamath, Zhihua Dong, David M Cohen, Ryan Nakhoul
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Publication number: 20200019448Abstract: A desired state system monitors an activity of a first product operating on a machine. The desired state system determines a second product that is connected to the first product. The first product and the second product are both part of a family of products. The desired state system determines an activity of the second product installed on the machine, and a desired activity of the second product on the machine. The activity of the second product is compared with the desired activity of the second product. The desired state system generates a customized message based on the comparison at the machine.Type: ApplicationFiled: July 16, 2018Publication date: January 16, 2020Inventors: Arwa Zoher Tyebkhan, Carlos G. Perez, Yee Hay Jonathan Leung, John R. Selbie, Tai Jonah Enrico, Zhihua Dong
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Patent number: 10452748Abstract: A lack of available responsive options for existing web sites and/or pages, and the wide spectrum under which they fall presents a challenge for a satisfying mobile user experience (UX) with a hosted collaboration service. Templates used to create a site and/or page may each have capabilities and features which “cross-over” into other templates. Deconstructing and rendering a web page into a native application experience at a mobile client may highlight a template's functionality to enhance the UX. For example, a server side application programming interface (API) may be provided for the mobile UX, a type of a page to be rendered may be determined, the page may be deconstructed into pieces, and the deconstructed pieces may be provided to rebuild the page at the mobile client natively. The page may be rendered on the mobile client with added elements based on the deconstructed pieces to enhance the mobile UX.Type: GrantFiled: October 14, 2016Date of Patent: October 22, 2019Assignee: Microsoft Technology Licensing, LLCInventors: Nathaniel T. Clinton, Andrew C. Haon, Kin Man Yau, Karl Thompson, Zhihua Dong
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Patent number: 10283598Abstract: Disclosed is a novel III-V heterojunction field effect transistor comprising a substrate layer, a first semiconductor layer, a second semiconductor layer, a drain electrode, a source electrode, a gate electrode, a first dielectric layer, second dielectric layers and the like, wherein the first semiconductor layer has a greater bandgap compared with the second semiconductor layer, and the second semiconductor layer and the first semiconductor layer are combined to form a heterostructure. The thickness of the first semiconductor layer is not greater than the critical thickness of two-dimensional electron gas formed in a heterojunction channel, and thus natural 2DEG in the heterojunction channel is depleted. The novel III-V heterojunction field effect transistor has the advantages of being simple in structure, simple in preparation process, stable in performance, high in reliability and the like.Type: GrantFiled: May 2, 2017Date of Patent: May 7, 2019Assignee: Hangzhou Dianzi UniversityInventors: Zhihua Dong, Zhiqun Cheng, Guohua Liu, Huajie Ke
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Publication number: 20180302482Abstract: Among other things, embodiments of the present disclosure help improve the functionality of electronic messaging software and systems by providing selective push notifications to users of such systems in response to new content being published. Embodiments of the present disclosure may provide notifications to some users based on the relevance of published content to such users, while abstaining from notifying users for whom the content is irrelevant.Type: ApplicationFiled: April 12, 2017Publication date: October 18, 2018Inventors: Andrew Haon, Nathaniel Terrell Clinton, Dmitriy Meyerzon, Adri Verlaan, Nikita Voronkov, Jeffrey L. Wight, Kristen Kamath, Zhihua Dong, David M. Cohen, Ryan Nakhoul
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Publication number: 20180254326Abstract: Disclosed is a novel III-V heterojunction field effect transistor comprising a substrate layer, a first semiconductor layer, a second semiconductor layer, a drain electrode, a source electrode, a gate electrode, a first dielectric layer, second dielectric layers and the like, wherein the first semiconductor layer has a greater bandgap compared with the second semiconductor layer, and the second semiconductor layer and the first semiconductor layer are combined to form a heterostructure. The thickness of the first semiconductor layer is not greater than the critical thickness of two-dimensional electron gas formed in a heterojunction channel, and thus natural 2DEG in the heterojunction channel is depleted. The novel III-V heterojunction field effect transistor has the advantages of being simple in structure, simple in preparation process, stable in performance, high in reliability and the like.Type: ApplicationFiled: May 2, 2017Publication date: September 6, 2018Inventors: Zhihua Dong, Zhiqun Cheng, Guohua Liu, Huajie Ke
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Publication number: 20170364480Abstract: A lack of available responsive options for existing web sites and/or pages, and the wide spectrum under which they fall presents a challenge for a satisfying mobile user experience (UX) with a hosted collaboration service. Templates used to create a site and/or page may each have capabilities and features which “cross-over” into other templates. Deconstructing and rendering a web page into a native application experience at a mobile client may highlight a template's functionality to enhance the UX. For example, a server side application programming interface (API) may be provided for the mobile UX, a type of a page to be rendered may be determined, the page may be deconstructed into pieces, and the deconstructed pieces may be provided to rebuild the page at the mobile client natively. The page may be rendered on the mobile client with added elements based on the deconstructed pieces to enhance the mobile UX.Type: ApplicationFiled: October 14, 2016Publication date: December 21, 2017Applicant: MICROSOFT TECHNOLOGY LICENSING, LLCInventors: Nathaniel T. Clinton, Andrew C. Haon, Kin Man Yau, Karl Thompson, Zhihua Dong
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Publication number: 20170366916Abstract: The ability for an organization's administrator to customize assets and content that, their users have access to is a substantial capability. This capability is not just to facilitate delivery of the correct content to the relevant audience, but is also important to ensure that the content is appropriate for the endpoint. The administrator may curate organizational links that are provided as a hierarchical directory of sites and applications for the organization. Embodiments are directed to programming the organizational links that propagate to mobile applications. A server side application programming interface (API) may be provided to access a organization's curated links, a web user experience may be provided to enable the administrator to manage and curate the organizational links, and a mobile-specific user experience may be provided for viewing the links in a manner that enables quick access to the most relevant content to users of the organization.Type: ApplicationFiled: October 20, 2016Publication date: December 21, 2017Applicant: MICROSOFT TECHNOLOGY LICENSING, LLCInventors: Zhihua Dong, Nathaniel T. Clinton, David M. Cohen, Kin Man Yau, Quanjie Lin, Andrew C. Haon
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Patent number: 9070756Abstract: A group III nitride high electron mobility transistor (HEMT) device comprises a source electrode (112), a drain electrode (111), a main gate (116), a top gate (118), an insulating dielectric layer (117) and a heterostructure, wherein the source electrode (112) and the drain electrode (111) are electrically connected via two-dimensional electron gas (2DEG) formed in the heterostructure; the heterostructure comprises a first semiconductor (113) and a second semiconductor (114); the first semiconductor (113) is disposed between the source electrode (112) and drain electrode (111); the second semiconductor (114) is formed on the surface of the first semiconductor (113) and is provided with a band gap wider than the first semiconductor (113); the main gate (116) is disposed at the side of the surface of the second semiconductor (114) adjacent to the source electrode (112), and is in Schottky contact with the second semiconductor (114); the dielectric layer (117) is disposed on the surfaces of the second semiconducType: GrantFiled: November 16, 2012Date of Patent: June 30, 2015Assignee: Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of SciencesInventors: Yong Cai, Guohao Yu, Zhihua Dong, Baoshun Zhang
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Publication number: 20140319584Abstract: A group III nitride high electron mobility transistor (HEMT) device comprises a source electrode (112), a drain electrode (111), a main gate (116), a top gate (118), an insulating dielectric layer (117) and a heterostructure, wherein the source electrode (112) and the drain electrode (111) are electrically connected via two-dimensional electron gas (2DEG) formed in the heterostructure; the heterostructure comprises a first semiconductor (113) and a second semiconductor (114); the first semiconductor (113) is disposed between the source electrode (112) and drain electrode (111); the second semiconductor (114) is formed on the surface of the first semiconductor (113) and is provided with a band gap wider than the first semiconductor (113); the main gate (116) is disposed at the side of the surface of the second semiconductor (114) adjacent to the source electrode (112), and is in Schottky contact with the second semiconductor (114); the dielectric layer (117) is disposed on the surfaces of the second semiconducType: ApplicationFiled: November 16, 2012Publication date: October 30, 2014Inventors: Yong Cai, Guohao Yu, Zhihua Dong, Baoshun Zhang