Abstract: A bidirectional GaN FET with a single gate formed by integrating a single-gate bidirectional GaN FET in parallel with a bidirectional device formed of two back-to-back GaN FETs with a common source. The single-gate bidirectional GaN FET occupies most of the integrated circuit die, such that the integrated device has a low channel resistance, while also capturing the advantages of a back-to-back bidirectional GaN FET device.

Abstract: An enhancement-mode transistor gate structure which includes a spacer layer of GaN disposed above a barrier layer, a first layer of pGaN above the spacer layer, an etch stop layer of p-type Al-containing column III-V material, for example, pAlGaN or pAlInGaN, disposed above the first p-GaN layer, and a second p-GaN layer, having a greater thickness than the first p-GaN layer, disposed over the etch stop layer. The etch stop layer minimizes damage to the underlying barrier layer during gate etching steps, and improves GaN spacer thickness uniformity.

Abstract: An enhancement-mode transistor gate structure which includes a spacer layer of GaN disposed above a barrier layer, a first layer of pGaN above the spacer layer, an etch stop layer of p-type Al-containing column III-V material, for example, pAlGaN or pAlInGaN, disposed above the first p-GaN layer, and a second p-GaN layer, having a greater thickness than the first p-GaN layer, disposed over the etch stop layer. The etch stop layer minimizes damage to the underlying barrier layer during gate etching steps, and improves GaN spacer thickness uniformity.

Abstract: Techniques are provided that may be implemented in a mobile device to provide one or more location parameters to one or more mobile processes (e.g., applications) provided and/or otherwise supported, at least in part, by the mobile device. For example, a mobile device may be configured to monitor one or more processes hosted on a first processor, and initiate a communication on a bus connecting the first processor to a positioning engine external to the first processor to obtain at least one updated location parameter in response to detection of activity of at least one of the one or more processes. In certain instances, the updated location parameter(s) may have been previously determined by the positioning engine.

Abstract: Passivation of group III-nitride hetero junction devices is described herein. The passivation facilitates simultaneous realization of effective/high current collapse suppression and low leakage current without the use of a sophisticated multiple-field plate technique. The passivation can be achieved by growing a charge-polarized AlN thin film on the surface of a group III-nitride based heterojunction device by plasma-enhanced atomic layer deposition such that positive polarization charges are induced at the interface to compensate for a majority of negative charges at the interface.

Abstract: Passivation of group III-nitride hetero junction devices is described herein. The passivation facilitates simultaneous realization of effective/high current collapse suppression and low leakage current without the use of a sophisticated multiple-field plate technique. The passivation can be achieved by growing a charge-polarized. AlN thin film on the surface of a group III-nitride based heterojunction device by plasma-enhanced atomic layer deposition such that positive polarization charges are induced at the interface to compensate for a majority of negative charges at the interface.

Abstract: Passivation of group III-nitride heterojunction devices is described herein. The passivation facilitates simultaneous realization of effective/high current collapse suppression and low leakage current without the use of a sophisticated multiple-field plate technique. The passivation can be achieved by growing a charge-polarized AlN thin film on the surface of a group III-nitride based heterojunction device by plasma-enhanced atomic layer deposition such that positive polarization charges are induced at the interface to compensate for a majority of negative charges at the interface.

Abstract: Techniques are provided that may be implemented in a mobile device to provide one or more location parameters to one or more mobile processes (e.g., applications) provided and/or otherwise supported, at least in part, by the mobile device. For example, a mobile device may be configured to monitor one or more processes hosted on a first processor, and initiate a communication on a bus connecting the first processor to a positioning engine external to the first processor to obtain at least one updated location parameter in response to detection of activity of at least one of the one or more processes. In certain instances, the updated location parameter(s) may have been previously determined by the positioning engine.

Abstract: Passivation of group III-nitride heterojunction devices is described herein. The passivation facilitates simultaneous realization of effective/high current collapse suppression and low leakage current without the use of a sophisticated multiple-field plate technique. The passivation can be achieved by growing a charge-polarized AlN thin film on the surface of a group III-nitride based heterojunction device by plasma-enhanced atomic layer deposition such that positive polarization charges are induced at the interface to compensate for a majority of negative charges at the interface.

Abstract: A system and method for detecting motion by a mobile device is provided. The mobile device determines whether motion is detected by a motion detector. The motion detection is sampled at a first sampling rate when no motion is detected for a specified time. The motion detection is sampled at a second sampling rate when motion is detected, wherein the second sampling rate is more frequent than the first sampling rate.

Abstract: A system and method for detecting motion by a mobile device is provided. The mobile device determines whether motion is detected by a motion detector. The motion detection is sampled at a first sampling rate when no motion is detected for a specified time. The motion detection is sampled at a second sampling rate when motion is detected, wherein the second sampling rate is more frequent than the first sampling rate.