Patents by Inventor Zhiliu Ma

Zhiliu Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8198105
    Abstract: The present invention provides a reticle 100 for use in a lithographic process. The reticle, in one embodiment, includes a patterned layer 110 located over a reticle substrate. The reticle 100 may further include a test pattern 130 located over the reticle substrate, wherein a portion of the test pattern 130 is within a step-distance of a portion of the patterned layer. In this embodiment, a variance in the test pattern is indicative of a variance in the patterned layer.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: June 12, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: Hyesook Hong, Zhiliu Ma, John K. Wright
  • Publication number: 20050164096
    Abstract: The present invention provides a reticle 100 for use in a lithographic process. The reticle, in one embodiment, includes a patterned layer 110 located over a reticle substrate. The reticle 100 may further include a test pattern 130 located over the reticle substrate, wherein a portion of the test pattern 130 is within a step-distance of a portion of the patterned layer. In this embodiment, a variance in the test pattern is indicative of a variance in the patterned layer.
    Type: Application
    Filed: July 30, 2003
    Publication date: July 28, 2005
    Applicant: Texas Instruments, Incorporated
    Inventors: Hyesook Hong, Zhiliu Ma, John Wright
  • Patent number: 6593033
    Abstract: An embodiment of the instant invention is a mask having a pattern which is transferred to a layer overlying a semiconductor wafer, the mask comprising: a transmissive portion (structure 102 of FIG. 1), the transmissive portion allowing energy which impinges upon the transmission portion to substantially pass through the transmissive portion; a substantially non-transmissive portion (structure 106 of FIG. 1); a semi-transmissive portion (structure 104 of FIG. 1) situated between the transmissive portion and the substantially non-transmissive portion, energy passing through the semi-transmissive portion having a phase; and wherein the phase of energy which passes through the semi-transmissive portion is out of phase with the phase of energy which passes through the transmissive portion. Preferably, the phase of the energy which passes through the semi-transmissive portion is around 180 degrees out of phase with energy which passes through the transmissive portion.
    Type: Grant
    Filed: September 21, 1999
    Date of Patent: July 15, 2003
    Assignee: Texas Instruments Incorporated
    Inventors: Zhiliu Ma, Anthony Yen, Cesar Garza