Abstract: A gas sensor device with temperature uniformity is presented herein. In an implementation, a device includes a complementary metal-oxide semiconductor (CMOS) substrate layer, a dielectric layer and a gas sensing layer. The dielectric layer is deposited on the CMOS substrate layer. Furthermore, the dielectric layer includes a temperature sensor and a heating element coupled to a heat transfer layer associated with a set of metal interconnections. The gas sensing layer is deposited on the dielectric layer.

Abstract: A gas sensor device with temperature uniformity is presented herein. In an implementation, a device includes a complementary metal-oxide semiconductor (CMOS) substrate layer, a dielectric layer and a gas sensing layer. The dielectric layer is deposited on the CMOS substrate layer. Furthermore, the dielectric layer includes a temperature sensor and a heating element coupled to a heat transfer layer associated with a set of metal interconnections. The gas sensing layer is deposited on the dielectric layer.

Abstract: An application specific integrated circuit (ASIC) is disclosed. The ASIC comprises an internal circuit coupled between a power line and ground and an output buffer coupled to the internal circuit; wherein the output buffer provides an output signal. The ASIC includes a fault detection circuit coupled between the power line and ground; and a first protection block configured to receive a first control signal from the fault detection circuit. The first switch is coupled to the power line, the output buffer and the internal circuit. The first protection block prevents current from flowing between the power line and ground when a fault condition is detected. The ASIC further includes a second protection block configured to receive a second control signal from the fault detection circuit, wherein the second protection block is coupled to the output signal, the power line and ground.

Abstract: A temperature compensated CMOS RC oscillator circuit changes the source-bulk voltage to stabilize the MOSFET's threshold voltage variation over temperature using a resistor and temperature-correlated bias current. The MOSFET's source is connected to ground through a resistor. This temperature-correlated bias current also runs through this resistor. When temperature increases, the bias current also increases, which increases the MOSFET's source-bulk voltage. The increased source-bulk voltage helps to stabilize the threshold voltage of MOSFET at high temperature. A power saving logic is also embedded in this oscillator to achieve higher frequency at lower power consumption. In the present invention, there is no high gain op amp or high speed comparator, which makes the resultant oscillator to be low power design and which can be integrated into a single chip with other system.

Abstract: A temperature compensated CMOS RC oscillator circuit changes the source-bulk voltage to stabilize the MOSFET's threshold voltage variation over temperature using a resistor and temperature-correlated bias current. The MOSFET's source is connected to ground through a resistor. This temperature-correlated bias current also runs through this resistor. When temperature increases, the bias current also increases, which increases the MOSFET's source-bulk voltage. The increased source-bulk voltage helps to stabilize the threshold voltage of MOSFET at high temperature. A power saving logic is also embedded in this oscillator to achieve higher frequency at lower power consumption. In the present invention, there is no high gain op amp or high speed comparator, which makes the resultant oscillator to be low power design and which can be integrated into a single chip with other system.