Abstract: A 3D stacked packaging structure and a manufacturing method thereof are provided. The 3D stacked packaging structure includes a bottom-layer structure and a top-layer structure stacked thereon. The bottom-layer structure and the top-layer structure each include: a substrate layer; a diamond layer grown on the substrate layer; an ion-implanted silicon wafer layer attached to the diamond layer; and a component layer provided on the silicon wafer layer, with the four layers stacked together in sequence, wherein the substrate layer of the top-layer structure is in contact with the component layer of the bottom-layer structure, and at least one through hole provided between the bottom-layer structure and the top-layer structure, extends through the component layer, the ion-implanted silicon wafer layer, the diamond layer, and the substrate layer of the top-layer structure, and extends through the component layer of the bottom-layer structure, and is filled with a conductive material.

Abstract: A multi-chip interconnection package structure with a heat dissipation plate and a preparation method thereof are provided. The multi-chip interconnection package structure with a heat dissipation plate includes a fine circuit layer, at least one die, a heat dissipation plate, a plastic package body, and a package circuit layer, the heat dissipation plate is provided on the fine circuit layer, and is mounted on a side of the die away from the fine circuit layer, the plastic package body wraps the die and the heat dissipation plate, and the package circuit layer is provided on the plastic package body.

Abstract: Semiconductor packages including local interconnects and methods of fabrication are described. In an embodiment, a local interconnect is fabricated with one or more cavities filled with a low-k material or air gap where a die-to-die routing path electrically connecting the first die and the second die includes the metal wire spanning across the one or more cavities. In other embodiments fanout can be utilized to create a wider bump pitch for the local interconnect, or for the local interconnect to connect core regions of the dies. Multiple local interconnects can also be utilized to scale down electrostatic discharge.

Abstract: A method and apparatus for correcting a physical slip and wear coefficient of a clutch comprising obtaining a torque difference according to a positional relation between an engine and the clutch; obtaining a correction weight value corresponding to an engine torque according to the torque difference; and correcting the physical slip and wear coefficient according to the correction weight value and a running-in state of the clutch. The method relates to obtaining a torque difference in real time by means of a positional relation between the engine and the clutch in a manner corresponding to the positional relation, obtaining a correction weight value corresponding to the engine torque according to the torque difference, and further correcting the physical slip and wear coefficient by combining the correction weight value and a running-in state of the clutch.

Abstract: A method and apparatus for correcting a physical slip and wear coefficient of a clutch comprising obtaining a torque difference according to a positional relation between an engine and the clutch; obtaining a correction weight value corresponding to an engine torque according to the torque difference; and correcting the physical slip and wear coefficient according to the correction weight value and a running-in state of the clutch. The method relates to obtaining a torque difference in real time by means of a positional relation between the engine and the clutch in a manner corresponding to the positional relation, obtaining a correction weight value corresponding to the engine torque according to the torque difference, and further correcting the physical slip and wear coefficient by combining the correction weight value and a running-in state of the clutch.