Patents by Inventor Zhiyong Li

Zhiyong Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • 1-Selector n-Resistor memristive devices
    Patent number: 9911789
    Abstract: A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector. Each memristor is coupled to a second interface of the selector via a first interface of each memristor. Each second electrode is coupled to one of the memristors via a second interface of each memristor.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: March 6, 2018
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Gary Gibson, Zhiyong Li
  • LED lamp bead wire clamping mounting structure
    Patent number: 9890934
    Abstract: The invention relates to the technical field of Light-Emitting Diodes (LEDs), and in particular to an LED lamp bead wire clamping mounting structure. The LED lamp bead wire clamping mounting structure includes a mounting seat and wire clamping parts, wherein the mounting seat is provided with two accommodation grooves for mounting the wire clamping parts and a mounting groove for mounting an LED lamp bead; the wire clamping parts are arranged in the accommodation grooves; each wire clamping part is provided with a bottom wall, a lamp bead connecting terminal connected with the bottom wall, two sidewalls upwards extending from the bottom wall and a crosswise-folded clamping piece connected with one sidewall; and the crosswise-folded clamping pieces extend to the other sidewalls.
    Type: Grant
    Filed: January 22, 2016
    Date of Patent: February 13, 2018
    Assignee: DONGGUAN NABAICHUAN ELECTRONIC TECHNOLOGICAL CO., LTD.
    Inventors: Degao Li, Zhiyong Li, Wei Wang, Haixin Huang, Feng Zhou
  • APPLICATION OF METRNL PROTEIN IN PREPARING HYPOLIPIDEMIC, HYPOGLYCEMIC MEDICINE
    Publication number: 20180030102
    Abstract: The present invention provides an application of Metrnl protein in preparing a hypolipidemic, hypoglycemic medicine or dietary supplement. The present invention further provides a method for preparing a mouse with fat-specific overexpression of Metrnl.
    Type: Application
    Filed: October 10, 2017
    Publication date: February 1, 2018
    Inventors: Chaoyu Miao, Zhiyong Li, Pei Wang
  • Method for monitoring and controlling cellular growth
    Patent number: 9879299
    Abstract: The present disclosure is drawn to a device for monitoring and controlling live cells and associated methods. In an example, the device can include a plurality of elongated nanostructures affixed to a substrate. The elongated nanostructures can each have an attachment end and a free end opposite the attachment end. The free end includes a metal and the attachment end is affixed to the substrate. The device can further include a functionalization layer that is coated on the free end of at least a portion of the plurality of elongated nanostructures. The functionalization layer can be formulated to retain live cells, and the device can be configured to be used in conjunction with a detector, such as a Raman spectrometer, in order to monitor growth of live cells.
    Type: Grant
    Filed: September 2, 2014
    Date of Patent: January 30, 2018
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Mineo Yamakawa, Zhiyong Li
  • PRINTHEADS WITH EPROM CELLS HAVING ETCHED MULTI-METAL FLOATING GATES
    Publication number: 20180022103
    Abstract: In one example in accordance with the present disclosure a printhead with a number of EPROM cells is described. The printhead deposits fluid onto a print medium. The printhead also includes a number of EPROM cells. Each EPROM cell includes a substrate having a source and a drain disposed therein, a floating gate separated from the substrate by a first dielectric layer. The floating gate includes a multi-metal layer that is a metal etched layer. Each EPROM cell also includes a control gate separated from the multi-metal layer of the floating gate by a second dielectric layer.
    Type: Application
    Filed: April 10, 2015
    Publication date: January 25, 2018
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning GE, Zhiyong LI, Ser Chia KOH, Chaw Sing HO
  • DATA STORAGE METHOD AND DEVICE
    Publication number: 20180020053
    Abstract: The present disclosure provides a data storage method and device. The data storage method includes: receiving data by a simulating device from a client operating system; encapsulating the data in a user space of a host system according to a protocol used by a storage server; and sending the encapsulated data to the storage server for storage. The method can realize storing data in the storage server, thereby shortening the I/O path, improving the I/O throughput of a system, reducing the CPU load, and optimizing the system performance.
    Type: Application
    Filed: October 12, 2015
    Publication date: January 18, 2018
    Inventors: Guangjun XIE, Baisheng WANG, Zhiyong LI
  • DYNAMIC LOGIC MEMCAP
    Publication number: 20180017870
    Abstract: An integrated circuit may include a substrate with a plurality of transistors formed in the substrate. The plurality of transistors may be coupled to a first metal layer formed over the plurality of transistors. A plurality of high dielectric nanometer capacitors may be formed of memristor switch material between the first metal layer and a second metal layer formed over the plurality of high dielectric capacitors. The plurality of high dielectric capacitors may operate as memory storage cells in dynamic logic.
    Type: Application
    Filed: April 27, 2015
    Publication date: January 18, 2018
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning GE, Zhiyong LI, Jianhua Yang, R. Stanley Williams
  • Non-volatile memory element with thermal-assisted switching control
    Patent number: 9870822
    Abstract: A non-volatile memory element with thermal-assisted switching control is disclosed. The non-volatile memory element is disposed on a thermal inkjet resistor. Methods for manufacturing the combination and methods of using the combination are also disclosed.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: January 16, 2018
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Ning Ge, Jianhua Yang, Zhiyong Li
  • SENSING A PROPERTY OF A FLUID
    Publication number: 20180009224
    Abstract: In an example, a device for sensing a property of a fluid may include an ion-sensitive field effect transistor (ISFET) having a gate, a source, and a drain. The device may also include a first metal element in contact with the gate and a switching layer in contact with the first metal layer. A resistance state of the switching layer is to be modified through application of an electrical field of at least a predefined strength through the switching layer and is to be retained in the switching layer following removal of the electrical field. The device may also include a metal plate in contact with the switching layer, in which the metal plate is to directly contact the fluid for which the property is to be sensed.
    Type: Application
    Filed: April 30, 2015
    Publication date: January 11, 2018
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning GE, Zhiyong Li, Leong Yap Chia, Wai Mun Wong
  • METHOD AND APPARATUS OF UNLOADING OUT OF MEMORY PROCESSING FLOW TO USER SPACE
    Publication number: 20170329655
    Abstract: The present application discloses a method and apparatus of unloading an out of memory (OOM) processing flow to a user space. A specific implementation of the method includes: writing related information of an OOM event into a memory page shared by a user space and a kernel space when a process triggers the OOM event, the related information comprising: an identification of the process and a path of a memory resource control sub-system where the process exists; acquiring, by an OOM service process of the user space, the related information of the OOM event through the memory page; and processing, by the OOM service process of the user space, the OOM event using the related information of the OOM event.
    Type: Application
    Filed: September 29, 2016
    Publication date: November 16, 2017
    Inventors: Linsi Yuan, Baisheng Wang, Dong Sun, Zhiyong Li
  • SURFACE ENHANCED FLUORESCENCE SPECTROSCOPY APPARATUS
    Publication number: 20170315058
    Abstract: A method for forming a surface-enhanced fluorescence spectroscopy (SEFS) apparatus may include depositing a plurality of surface-enhanced spectroscopy (SES) elements onto respective tips of a plurality of nano-fingers, wherein the nano-fingers are arranged in sufficiently close proximities to each other to enable the tips of a group of adjacent nano-fingers to come into sufficiently close proximities to each other to enable the SES elements on the tips to trap fluorescent probe molecules that are to bind with target molecules when the nano-fingers are partially collapsed.
    Type: Application
    Filed: July 10, 2017
    Publication date: November 2, 2017
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Zhang-Lin Zhou, Lihua ZHAO, Steven J. BARCELO, Zhiyong LI
  • INTEGRATED CIRCUIT DEVICES COMPRISING MEMRISTORS
    Publication number: 20170305153
    Abstract: In some examples, an integrated circuit device includes a substrate, a memristor over the substrate and comprising a first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers, and a thermal resistor layer over the substrate.
    Type: Application
    Filed: June 29, 2017
    Publication date: October 26, 2017
    Inventors: Jianhua Yang, Ning Ge, Zhiyong Li
  • Apparatus for performing a sensing application
    Patent number: 9778198
    Abstract: An apparatus for performing a sensing application may a substrate having a plurality of nano-fingers positioned to receive the dispensed solution , first and second reservoirs, first and second dispensers to dispense first and second solutions from the first and second reservoirs onto first and second subsets of the plurality of nano-fingers. The plurality of nano-fingers are flexible, such that the plurality of nano-fingers are configurable with respect to each other. The apparatus may include an illumination source to illuminate the first and second solutions and an analyte introduced around the plurality of nano-fingers, wherein light is to be emitted from the analyte in response to being illuminated. The apparatus may include a detector to detect the light emitted from the analyte.
    Type: Grant
    Filed: August 25, 2016
    Date of Patent: October 3, 2017
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Steven Barcelo, Zhiyong Li, Alexandre M. Bratkovski, Ansoon Kim
  • Printhead with a number of memristor cells and a parallel current distributor
    Patent number: 9776400
    Abstract: A printhead with a number of memristors and a parallel current distributor is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of memristor cells. Each memristor cell includes a memristor to store information and a multiplexing component to select a memristor. The printhead also includes and at least one current distributor connected in parallel to a number of memristor cells.
    Type: Grant
    Filed: July 26, 2014
    Date of Patent: October 3, 2017
    Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning Ge, Jianhua Yang, Zhiyong Li
  • MEMRISTORS WITH OXIDE SWITCHING LAYERS
    Publication number: 20170279044
    Abstract: An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.
    Type: Application
    Filed: September 30, 2014
    Publication date: September 28, 2017
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning GE, Jianhua YANG, Zhiyong LI, Minxian ZHANG, Katy Samuels
  • MULTILAYERED MEMRISTORS
    Publication number: 20170271591
    Abstract: A multilayered memristor includes a semiconducting n-type layer, a semiconducting p-type layer, and a semiconducting intrinsic layer. The semiconducting n-type layer includes one or both of anion vacancies and metal cations. The semiconducting p-type layer includes one or both of metal cation vacancies and anions. The semiconducting intrinsic layer is coupled between the n-type layer and the p-type layer to form an electrical series connection through the n-type layer, the intrinsic layer, and the p-type layer.
    Type: Application
    Filed: February 13, 2015
    Publication date: September 21, 2017
    Inventors: Warren Jackson, Jianhua Yang, Kyung Min Kim, Zhiyong Li
  • SUPERLINEAR SELECTORS
    Publication number: 20170271406
    Abstract: A superlinear selector includes a first electrode, a second electrode, and an active layer coupled in series between the first electrode and the second electrode. The active layer includes a superlinear electrical conductor and an electrical insulator. One of the superlinear electrical conductor and the electrical insulator forms a matrix in which the other of the superlinear electrical conductor and the electrical insulator is dispersed.
    Type: Application
    Filed: February 27, 2015
    Publication date: September 21, 2017
    Applicant: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Gary Gibson, Zhiyong Li
  • RESISTIVE MEMORY ARRAYS WITH A NEGATIVE TEMPERATURE COEFFICIENT OF RESISTANCE MATERIAL
    Publication number: 20170271589
    Abstract: A resistive memory array includes a plurality of resistive memory devices. A sneak path current in the resistive memory array is reduced when a negative temperature coefficient of resistance material is incorporated in series with a negative differential resistance selector that is in series with a memristor switching material at a junction formed at a cross-point between two conductors of one of the plurality of resistive memory devices.
    Type: Application
    Filed: January 26, 2015
    Publication date: September 21, 2017
    Inventors: Minxian Max Zhang, Jianhua Yang, Zhiyong Li, R. Stanley Williams
  • MEMORY CELL WITH A MULTI-LAYERED SELECTOR
    Publication number: 20170271408
    Abstract: A method of forming a multi-layered selector of a memory cell is described. In the method, a memory element of the memory cell is formed. The memory element stores information. A multi-layered selector of the memory cell is formed by alternating deposition of at least a dielectric layer and a first diffusion layer. The first diffusion layer includes fast diffusive ions. The multi-layered selector is coupled to the memory element in a memory cell.
    Type: Application
    Filed: January 28, 2015
    Publication date: September 21, 2017
    Inventors: Jianhua Yang, Ning Ge, Zhiyong Li, Richard H. Henze
  • NONVOLATILE MEMORY CROSSBAR ARRAY
    Publication number: 20170271410
    Abstract: Provided in one example is a nonvolatile memory crossbar array. The array includes a number of junctions formed by a number of row lines intersecting a number of column lines; and a resistive memory element in series with a selector at each of the junctions coupling between one of the row lines and one of the column lines. The selector may be a volatile switch including: a bottom electrode; an oxide layer disposed over the bottom electrode, the oxide layer including Cu2O; and a top electrode disposed over the oxide layer.
    Type: Application
    Filed: February 11, 2015
    Publication date: September 21, 2017
    Inventors: Minxian Max Zhang, Kathryn Samuels, Jianhua Joshua Yang, R. Stanley Williams, Zhiyong Li