Patents by Inventor ZHIYUAN BAI

ZHIYUAN BAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure, semiconductor assembly and power semiconductor device
    Patent number: 10978584
    Abstract: A semiconductor structure, a semiconductor assembly and a power semiconductor device. The semiconductor structure includes: a P-type semiconductor material layer; an N-type semiconductor material layer adjacent to the P-type semiconductor material layer, wherein the N-type semiconductor material layer and the P-type semiconductor material layer together from a PN junction; and a plurality of insulating material layers located outside the PN junction and distributed along the superposition direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein the relative dielectric constants of the adjacent insulating material layers are different.
    Type: Grant
    Filed: August 17, 2016
    Date of Patent: April 13, 2021
    Assignees: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY, CHONGQING PINGWEI ENTERPRISE CO., LTD.
    Inventors: Jiangfeng Du, Zhenchao Li, Dong Liu, Zhiyuan Bai, Qi Yu, Shuzhou Li
  • SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR ASSEMBLY AND POWER SEMICONDUCTOR DEVICE
    Publication number: 20190305080
    Abstract: A semiconductor structure, a semiconductor assembly and a power semiconductor device. The semiconductor structure includes: a P-type semiconductor material layer; an N-type semiconductor material layer adjacent to the P-type semiconductor material layer, wherein the N-type semiconductor material layer and the P-type semiconductor material layer together from a PN junction; and a plurality of insulating material layers located outside the PN junction and distributed along the superposition direction of the P-type semiconductor material layer and the N-type semiconductor material layer, wherein the relative dielectric constants of the adjacent insulating material layers are different.
    Type: Application
    Filed: August 17, 2016
    Publication date: October 3, 2019
    Applicants: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA, CHONGQING PINGWEI ENTERPRISE CO., LTD.
    Inventors: JIANGFENG DU, ZHENCHAO LI, DONG LIU, ZHIYUAN BAI, QI YU, SHUZHOU LI