Abstract: The compositions and methods described herein are directed to treating solid tumors using CAR T therapy and/or antibodies targeting GCC. The compositions include CAR comprising an extracellular domain that binds GCC.

Abstract: An optoelectrical assembly includes a voltage conversion circuit, an optoelectrical semiconductor device, an optoelectrical detection circuit, and a controller. The voltage conversion circuit provides a bias voltage to the optoelectrical semiconductor device, and adjusts, by changing the bias voltage, an output optical power. A differential resistance value (Rdiff) of the optoelectrical semiconductor device within a range of a target optical power satisfies 0.1 ohm (?)?Rdiff?50?, and the differential resistance value is a ratio of a voltage variation to a current variation corresponding to the voltage variation. The optoelectrical detection circuit detects the output optical power, and outputs a detection signal to the controller. The controller determines a control signal based on the detection signal, and outputs the control signal to the voltage conversion circuit, where the control signal is used to adjust the bias voltage.

Abstract: The present disclosure relates to compositions and methods for compositions, methods, and kits for treating cancer using chimeric antigen receptor (CAR) modified cells. Some embodiments of the present disclosure relate to an isolated nucleic acid sequence encoding CAR. The CAR may include an antigen binding domain, a transmembrane domain, a costimulatory signaling region, and a CD3 zeta signaling domain. The antigen binding domain may bind to an antigen of a non-essential organ.

Abstract: The present disclosure discloses an optical measurement device and method for a plasma magnetic field with adjustable sensitivity. The method comprises the following steps: constructing an optical rotation measurement system based on a pulsed laser beam for measuring an optical rotation image and a shadow image; processing the optical rotation image and the shadow image, and obtaining a distribution of proportional coefficients based on alight intensity distribution; obtaining a distribution of rotation angles based on a mapping relationship between the proportional coefficients and the rotation angles; constructing an interference measurement system based on the pulsed laser beam, and measuring a phase shift of an interference image; calculating a distribution of electron areal densities based on the phase shift in the interference image; obtaining a two-dimensional distribution of an average magnetic field based on the rotation angles and the electron areal densities.

Abstract: The present disclosure relates to compositions and methods for enhancing infiltration of lymphocytes into tumor tissue, enhancing anti-tumor lymphocyte activities in tumor microenvionment (TME), inhibiting regulatory lymphocyte (e.g., B and T cells) activities in TME, and/or long term benefit of cell therapies. For example, in a method of in vivo cell expansion, the method comprises administering an effective amount of cells comprising an antigen binding molecule to a subject; and administering an effective amount of presenting cells expressing a solid tumor antigen that the binding molecule binds.

Abstract: A hydro-photovoltaic complementary operation chart application method for a clean energy base includes: divide a hydro-photovoltaic complementary operation chart into two sub-operation charts by runoff probability and critical probability; predict runoff and predicted photovoltaic output during the operation cycle, select the sub-operation chart by the runoff probability, determine hydropower output of a reservoir in the current month according to water level of the reservoir at the beginning of the current month and the operation area, and obtain the water level of the reservoir at the end of the current month through the runoff calculation; obtain long-term hydropower output process and reservoir level process in the clean energy base until the hydropower output and water level of the reservoir in all months of the operation cycle are calculated, and calculate hydropower generation probability to complete operation.

Abstract: A speech control system includes a first client running on a mobile terminal, a server end running on a server, and a second client running on a controlled terminal. The first client obtains identity information of a user, and sends the identity information of the user to the server end. The server end verifies the identity information of the user. The first client further collects speech data of the user, generates a speech control request based on the speech data, and sends the speech control request to the server end. When verification on the identity information succeeds, the server end generates a control instruction based on the speech control request, and sends the control instruction to the second client. The second client indicates the controlled terminal to execute the control instruction.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C?C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R?C?CR?, wherein R? and R? independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: A method and system for improving e-commerce that is directed at improving landing pages for consumer products. Using long tail query phrases, the method and system generates more detailed landing pages that will assist in providing more information to consumers.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

Abstract: Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.

Abstract: Compounds of Formula IA, IB, II, III, IV, and/or V are described herein along with their methods of use. A compound of the present invention may cross-link under physiological conditions and/or in vivo.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes forming a barrier layer on exposed surfaces of a feature in a dielectric layer, forming a liner layer on the barrier layer, forming a seed layer on the liner layer, forming a metal fill on the seed layer by a metal fill process and overburdening the feature using an electroplating process, performing a planarization process to expose a top surface of the dielectric layer, and selectively forming a cobalt-aluminum alloy cap layer on the barrier layer, the liner layer, the seed layer, and the metal fill by exposing the substrate to a cobalt-containing precursor and an aluminum-containing precursor.

Abstract: Disclosed is a hardware-based protection group switching method and optical communication equipment.

Abstract: Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes providing a substrate comprising a metal region and a dielectric region surrounding the metal region, selectively forming a cobalt-containing alloy cap layer on the metal region by exposing the substrate to a first precursor and a second precursor, the first precursor and the second precursor are selected from a group consisting of an aluminum-containing precursor, a cobalt-containing precursor, a ruthenium-containing precursor, a manganese-containing precursor, and a tungsten-containing precursor, wherein the first precursor is different from the second precursor.

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

Abstract: Described are microelectronic device comprising a dielectric layer formed on a substrate, a feature 206 comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming an microelectronic device comprising the two metal liner film on the barrier layer.