Abstract: Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a 3D NAND memory device includes a substrate, core regions, isolation regions, a layer stack, channel structures, and an isolation structure. Each core region is surrounded by one or more of the isolation regions. The layer stack is formed in each core region and includes first dielectric layers and conductor layers that are alternatingly stacked over each other. The channel structures are formed through the layer stack. The isolation structure is formed in one or more of the isolation regions, and includes second dielectric layers and third dielectric layers that are alternatingly stacked over each other.

Abstract: The present disclosure provides a method for forming a three-dimensional memory device. The method can comprise forming a film stack with a plurality of dielectric layer pairs on a substrate, forming a channel structure region in the film stack including a plurality of channel structures, and forming a first staircase structure in a first staircase region and a second staircase structure in a second staircase region. Each of the first staircase structure and the second staircase structure can include a plurality of division block structures arranged along a first direction. A first vertical offset defines a boundary between adjacent division block structures. Each division block structure includes a plurality of staircases arranged along a second direction that is different from the first direction. Each staircase includes a plurality of steps arranged along the first direction.

Abstract: The present invention relates to a ventilating and blanking device for a coal storage Eurosilo. The ventilating and blanking device includes a top blanking pipe, an axial flow fan and a baffle door, the top blanking pipe including a first pipeline and a second pipeline, an air supply pipe is connected to a side wall of the second pipeline, and the baffle door is connected to a driving mechanism; during blanking, the driving mechanism drives the baffle door so as to make the baffle door close the air supply pipe and the axial flow fan is shut off; and during ventilation, the driving mechanism drives the baffle door so as to make the baffle door close the first pipeline, and the axial flow fan is turned on. Compared with the prior art, the present invention has the advantages of ventilation efficiency, good ventilation effect, etc.

Abstract: Disclosed herein is a flexible sensing interface, comprising: a sensor, comprising: a core; an inner electrode in the form of a conductive material in contact with the core; an inner dielectric material substantially encasing the inner electrode; an outer electrode in the form of a conductive material in contact with the inner dielectric material and in electrical communication with the inner electrode; and an outer dielectric material substantially encasing the outer electrode; wherein the inner dielectric material and the outer dielectric material comprise an elastic material. Also disclosed herein are systems and methods for making and using the same.

Abstract: The present disclosure relates to a wide-range perpendicular sensitive magnetic sensor and the method for manufacturing the same, the magnetic sensor includes a substrate, a plurality of magnetic tunnel junctions, a plurality of magnetic flux regulators, a first output port and a second output port.

Abstract: The present disclosure relates to a wide-range perpendicular sensitive magnetic sensor and the method for manufacturing the same, the magnetic sensor includes a substrate, a plurality of magnetic tunnel junctions, a plurality of magnetic flux regulators, a first output port and a second output port.

Abstract: Apparatuses and methods for pipelining memory operations with error correction coding are disclosed. A method for pipelining consecutive write mask operations is disclosed wherein a second read operation of a second write mask operation occurs during error correction code calculation of a first write mask operation. The method may further including writing data from the first write mask operation during the error correction code calculation of the second write mask operation. A method for pipelining consecutive operations is disclosed where a first read operation may be cancelled if the first operation is not a write mask operation. An apparatus including a memory having separate global read and write input-output lines is disclosed.

Abstract: A group of tropomyosin receptor kinase inhibitors including an amido-phenoxy-indazole structure fragment. These compounds show potent inhibitory effects on various oncogenic kinases, especially TRK, and thus can be used to treat tumors or cancers.

Abstract: Disclosed are a method and device for realizing advanced nitrogen removal of mature landfill leachate and sludge reduction by using sludge fermentation products as carbon source, belonging to the field of biological treatment of sludge of high ammonia nitrogen wastewater.

Abstract: A current sensor includes: four first uniaxial TMR chips and at least two second uniaxial TMR chips, each first uniaxial TMR chip and each second uniaxial TMR chip being located on the same virtual ring, wherein magnetic sensitive directions of the four first uniaxial TMR chips are perpendicular to a radius of the virtual ring, magnetic sensitive directions of two adjacent first uniaxial TMR chips are perpendicular to each other, magnetic sensitive directions of the two second uniaxial TMR chips are parallel to the radius of the virtual ring and opposite to each other, and the two second uniaxial TMR chips respectively have the same positions as two first uniaxial TMR chips; each first uniaxial TMR chip and each second uniaxial TMR chip are configured to collect a magnetic induction intensity, the magnetic induction intensity is configured to calculate a target current value of a to-be-measured wire.

Abstract: The disclosure relates to an automatic measuring system and a method thereof for drilling fluid parameters measurement. The system includes i. mud container, configured for test drilling fluid preparation and samples collection; ii. heat jacket, configured to keep the drilling fluid in the tank warm iii. heat exchanger, configured to simulate the practical conditions; iv. plunger pump, configured to pump the test drilling fluid to the flowing test device; v. flow test device, configured to simulate the flowing states of drilling fluid in the borehole annulus and drilling string, and also measure the pressure and flow rate of drilling fluid vi. control module, configured to obtain rheological parameters and the best rheological mode of the drilling fluid in the borehole annulus and drilling string based on the pressure and flow rate.

Abstract: The invention relates to a method for preparing an anti-counterfeiting modal fiber, including: mixing a pulp stock solution with a cellulose catalyst, alkalizing, aging, sulfonating, and then dissolving the pulp stock solution in an alkaline solution to obtain a treatment solution; mixing the treatment solution with multiple amino acid-metal chelates, filtering, defoaming and ripening to obtain a spinning stock solution; and mixing the spinning stock solution with a spinning bath additive, and wet spinning, followed by drafting, defoaming, desulfurizing, water washing, and other post-treatments, to obtain an anti-counterfeiting modal fiber, wherein the amino acid metal-chelates account for 0.5%-1.5% by weight of the spinning stock solution. Amino acid-metal chelates are used to anti-counterfeit and encrypt the modal fibers, and the anti-counterfeiting and encrypting is involved in the spinning stock solution of modal fibers.

Abstract: The embodiments of the present disclosure disclose a schedule sharing method, apparatus, and device, the schedule sharing method includes: determining a schedule to be shared after detecting a trigger operation of a first user; and sending the schedule to be shared to a target object based on a share operation triggered the first user. The target object is a page or webpage accessed by a user having an access authority. When a second user views the schedule information of the schedule to be shared through the target object, the authority information of the second user with respect to the schedule to be shared is obtained, so that an operation control matching authority information of the second user is displayed on the page corresponding to the schedule to be shared, thereby allowing the second user to interact with the schedule to be shared through the operation control.

Abstract: In certain aspects, a method for forming a three-dimensional (3D) memory device is disclosed. A stack structure including interleaved first dielectric layers and second dielectric layers is formed. Channel structures extending through the first dielectric layers and the second dielectric layers in a first region of the stack structure are formed. All the second dielectric layers in the first region and parts of the second dielectric layers in a second region of the stack structure are replaced with conductive layers. Word line pick-up structures extending through the first dielectric layers and remainders of the second dielectric layers in the second region of the stack structure are formed at different depths, such that the word line pick-up structures are electrically connected to the conductive layers, respectively, in the second region of the stack structure.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region, word line pick-up structures in a dielectric portion of a second region, and word lines each extending in the first region and a conductive portion of the second region. The first region and the second region are arranged in a first direction. The dielectric portion and the conductive portion of the second region are arranged in a second direction perpendicular to the first direction. The word lines are discontinuous in the dielectric portion of the second region and are electrically connected to the word line pick-up structures, respectively.

Abstract: A method and a sensor for detecting L-cystine are disclosed. The method is implemented by assembling a sodium 3,3?-dithiodipropane sulfonate (SPS) membrane on a surface of Au membrane layer of an Au electrode and using an extended gate of field effect transistor (FET) and in-situ signal amplification of the FET to detect L-cystine sensitively. The polyanion of the SPS membrane adsorbs and binds a positively charged target L-cystine through electrostatic interaction, thus forming an electric double layer structure to generate a membrane potential identifying a monovalent organic ammonium ion. The sensor includes the FET, wherein a gate-extended gold electrode is arranged on the FET, and the SPS membrane is assembled on the surface of the Au membrane layer of the gate-extended gold electrode. The sensor has an excellent Nernst response to L-cystine.

Abstract: A three-dimensional (3D) memory device includes a memory stack including a memory block. The memory block includes a memory array structures and a staircase structure in a first lateral direction, and fingers in a second lateral direction perpendicular to the first lateral direction. The fingers include a first finger and a second finger. The 3D memory device also includes a source-select-gate (SSG) cut structure extending through a portion of the memory stack and between the first finger and the second finger. The staircase structure includes a first staircase connected to first memory cells in the first finger and a second staircase connected to second memory cells in the second finger.

Abstract: The present disclosure relates to an AC/DC closed-loop current sensor, including a magnetism gathering iron core, a TMR chip, a signal processing circuit, a signal generator, and a feedback coil. The TMR chip is arranged at an air gap of the magnetism gathering iron core and connected to the signal processing circuit. The signal processing circuit is connected to the signal generator. The feedback coil is wound around the magnetism gathering iron core and connected to the signal generator. The signal processing circuit is configured to select from the induced signal of the TMR chip and make an amplification to obtain a current signal component and send the current signal component to the signal generator. The signal generator is configured to adjust a current output to the feedback coil based on the current signal component, and output a measurement result of the selected current signal component.

Abstract: In a semiconductor device, a stack of alternating gate layers and insulating layers is formed. Channel structures are formed in an array region of the stack. A first staircase is formed at a first section of the stack. A second staircase is formed at a second section of the stack. A dummy staircase is formed at the first section and disposed between the first staircase and the second staircase. The dummy staircase includes dummy group stair steps descending in a second direction parallel to a plane defined by any one of the gate layers and the insulating layers, and dummy division stair steps descending in a third direction and a fourth direction parallel to the plane and perpendicular to the second direction. The third direction and the fourth direction are opposite to each other.

Abstract: A terminal control system and method, and a terminal device are provided. The terminal control system includes: a detection chip and at least one terminal key arranged on a side surface of a terminal device. The detection chip is connected to the terminal key. The terminal key is configured to generate an inductive capacitance and an interelectrode capacitance corresponding to an external control instruction, in response to a reception of the external control instruction. The detection chip is configured to detect the inductive capacitance and the interelectrode capacitance; determine inductive capacitance variation corresponding to the inductive capacitance and interelectrode capacitance variation corresponding to the interelectrode capacitance; determine a control type corresponding to the control instruction according to the inductive capacitance variation and the interelectrode capacitance variation; and trigger the terminal device to perform a control operation corresponding to the control type.