Abstract: Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: An all-solid-state electrochromic device comprises a transparent base material, and an electrochromic multilayer-stack structure formed on the transparent base material. The electrochromic multilayer-stack structure comprises a first transparent-conductive film formed on the transparent base material, an ion-storage layer formed on the first transparent-conductive film, a solid-electrolyte layer formed on the ion-storage layer, and an electrochromic layer formed on the solid-electrolyte layer. The electrochromic layer comprises a reflection-controllable electrochromic layer. In one exemplary embodiment, the electrochromic layer comprises a reflection-controllable layer that comprises at least one of antimony and an antimony-based alloy. A second transparent-conductive film can be formed on the reflection-controllable layer, or between the reflection-controllable layer and the solid-electrolyte layer.

Abstract: Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Abstract: Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Abstract: Prior electrochromic devices frequently suffer from poor reliability and poor performance. Some of the difficulties result from inappropriate design and construction of the devices. In order to improve device reliability two layers of an electrochromic device, the counter electrode layer and the electrochromic layer, can each be fabricated to include defined amounts of lithium. Further, the electrochromic device may be subjected to a multistep thermochemical conditioning operation to improve performance. Additionally, careful choice of the materials and morphology of some components of the electrochromic device provides improvements in performance and reliability. In some devices, all layers of the device are entirely solid and inorganic.

Abstract: One exemplary embodiment of an electrochromic thin-film material comprises a metal-chalcogen compound; and/or a mixture or solid solution of one or more metal-rich metal-chalcogen compounds and/or lithium. One or more of the metals comprise Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Sb, or Bi, or combinations thereof; and one or more of the chalcogens comprise O, S, Se, or Te, or combinations thereof.

Abstract: One exemplary embodiment of an electrochromic thin-film material comprises a metal-chalcogen compound; and/or a mixture or solid solution of one or more metal-rich metal-chalcogen compounds and/or lithium. One or more of the metals comprise Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Sb, or Bi, or combinations thereof; and one or more of the chalcogens comprise O, S, Se, or Te, or combinations thereof.

Abstract: An electrochromic switching device comprises a counter electrode, an active electrode and an electrolyte layer disposed between the counter electrode and the active electrode. The active electrode comprises at least one of an oxide, a nitride, an oxynitrides, a partial oxide, a partial nitride and a partial oxynitride of at least one of Sb, Bi, Si, Ge, Sn, Te, N, P, As, Ga, In, Al, C, Pb and I. Upon application of a current to the electrochromic switching device, a compound comprising at least one of the alkali and the alkaline earth metal ion and an element of the active electrode is formed as part of the active electrode.

Abstract: An all-solid-state electrochromic device comprises a transparent base material, and an electrochromic multilayer-stack structure formed on the transparent base material. The electrochromic multilayer-stack structure comprises a first transparent-conductive film formed on the transparent base material, an ion-storage layer formed on the first transparent-conductive film, a solid-electrolyte layer formed on the ion-storage layer, and an electrochromic layer formed on the solid-electrolyte layer. The electrochromic layer comprises a reflection-controllable electrochromic layer. In one exemplary embodiment, the electrochromic layer comprises a reflection-controllable layer that comprises at least one of antimony and an antimony-based alloy. A second transparent-conductive film can be formed on the reflection-controllable layer, or between the reflection-controllable layer and the solid-electrolyte layer.

Abstract: One exemplary embodiment of an electrochromic thin-film material comprises an alloy of antimony and one or more base metals; and/or an alloy of antimony, one or more base metals, and lithium; and/or an alloy of antimony, one or more base metals, lithium, and one or more noble metals. Another exemplary embodiment of an electrochromic thin-film material comprises a multilayer stack, the multilayer stack comprising at least one layer comprising one of antimony, antimony-lithium alloy, antimony-one or more base metals alloy, antimony-one or more base metals-lithium alloy, antimony-one or more base metals-one or more noble metals alloy, and antimony-one or more base metals-one or more noble metals-lithium alloy; and at least one alternating layer comprising one of a base metal and a base-metal alloy. One or more of the base metals comprise Co, Mn, Ni, Fe, Zn, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Cd, Mg, Al, Ga, In, Sn, Pb, and Bi, and alloys thereof.

Abstract: An electrochromic switching device comprises a counter electrode, an active electrode and an electrolyte layer disposed between the counter electrode and the active electrode. The active electrode comprises at least one of an oxide, a nitride, an oxynitrides, a partial oxide, a partial nitride and a partial oxynitride of at least one of Sb, Bi, Si, Ge, Sn, Te, N, P, As, Ga, In, Al, C, Pb and I. Upon application of a current to the electrochromic switching device, a compound comprising at least one of the alkali and the alkaline earth metal ion and an element of the active electrode is formed as part of the active electrode.

Abstract: A method for generating hydrogen by photocatalytic decomposition of water using porphyrin nanotube composites. In some embodiments, both hydrogen and oxygen are generated by photocatalytic decomposition of water.

Abstract: Heteroporphyrin nanotubes, metal nanostructures, and metal/porphyrin-nanotube composite nanostructures formed using the nanotubes as photocatalysts and structural templates, and the methods for forming the nanotubes and composites.

Abstract: Heteroporphyrin nanotubes, metal nanostructures, and metal/porphyrin-nanotube composite nanostructures formed using the nanotubes as photocatalysts and structural templates, and the methods for forming the nanotubes and composites.