Abstract: The present disclosure belongs to the technical field of PVC foam co-extruded sheets, and particularly relates to a wide low-temperature impact-resistant and bending-resistant PVC foam co-extruded sheet and a preparation method thereof. The PVC foam co-extruded sheet of the present disclosure includes a core layer and a skin layer. Raw materials of the core layer include PVC resin powder, a silicone-methyl methacrylate-ethyl acrylate composite low-temperature toughening and reinforcing agent, a filler, a foaming regulator I, a white foaming agent, a calcium-zinc stabilizer, a cold-resistant plasticizer, stearic acid, polyethylene wax, and oxidized polyethylene wax.

Abstract: The present disclosure belongs to the technical field of PVC foam co-extruded sheets, and particularly relates to a wide low-temperature impact-resistant and bending-resistant PVC foam co-extruded sheet and a preparation method thereof. The PVC foam co-extruded sheet of the present disclosure includes a core layer and a skin layer. Raw materials of the core layer include PVC resin powder, a silicon-acrylic composite low-temperature toughening and reinforcing agent, a filler, a foaming regulator I, a white foaming agent, a calcium-zinc stabilizer, a cold-resistant plasticizer, stearic acid, polyethylene wax, and oxidized polyethylene wax.

Abstract: A nanotube-photoresist composite is fabricated by preparing a nanotube suspension using a nanotube structure-containing raw material, dispersing the nanotube suspension in a photoresist using ultra-sonication to produce a nanotube suspension-photoresist mix, spin-coating the nanotube suspension-photoresist mix on a substrate to form a nanotube suspension-photoresist composite layer, and removing one or more solvents in the nanotube suspension-photoresist composite layer by baking.

Abstract: The disclosure discloses a reordering device and method for Ethernet transmission configured to solve a technical problem of large resource consumption and an the operating frequency failing to meet the requirement of a high-speed system in an existing reordering method. The reordering device provided by the disclosure includes a line sequence detecting module and a line sequence locking module, wherein the line sequence detecting module is configured to detect a line sequence corresponding to each channel, acquire a serial number of the channel and encode the serial number, and send the coded serial number to the line sequence locking module; and the line sequence locking module reorders input data according to the coded serial number received to obtain a reordered data stream, then sends out the reordered data stream, and at the same time, locks a sequence of the reordered data stream.

Abstract: Systems and methods for creating carbon nanotubes are disclosed that comprise a growing a nanotube on a tri-layer material. This tri-layer material may comprise a catalyst and at least one layer of Ti. This tri-layer material may be exposed to a technique that is used to grow a nanotube on a material such as a deposition technique.

Abstract: A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.

Abstract: A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.

Abstract: A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.

Abstract: Systems and methods for creating carbon nanotubes are disclosed that comprise a growing a nanotube on a tri-layer material. This tri-layer material may comprise a catalyst and at least one layer of Ti. This tri-layer material may be exposed to a technique that is used to grow a nanotube on a material such as a deposition technique.

Abstract: A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.

Abstract: A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (17%) between GaN and silicon is solved by using AlN as the first buffer layer with a 5:4 coincidence between AlN(0001) and Si(111) lattice to reduce the lattice mismatch to 1.3%.