Abstract: A spherical flip-chip micro-LED, a method for manufacturing the spherical flip-chip micro-LED, and a display panel are provided. The spherical flip-chip micro-LED includes a light-emitting body, a supporting body, a first electrode, a second electrode, and an insulating protective layer. The supporting body is transparent. The first electrode and the second electrode are electrically coupled with the light-emitting body. The insulating protective layer covers the light-emitting body. The light-emitting body, the supporting body, and the insulating protective layer form a spherical structure.

Abstract: A spherical LED chip, a method for manufacturing the same, and a display panel, and a method for spherical LED chip transfer are provided. The spherical LED chip includes a first electrode, a second electrode surrounding the first electrode and having magnetism, and a first insulating protective layer arranged at the outside of the first electrode. The first insulating protective layer and the second electrode form an LED housing configured to wrap the first electrode and with a spherical outer contour.

Abstract: A display device, a sub-pixel repair circuit and a repair method therefor. The sub-pixel repair circuit comprises a drive circuit module, a detection circuit module, a repair circuit module, a light-emitting device, and a standby light-emitting device; the drive circuit module is used for providing a drive current to the light-emitting device in response to a data signal of a data line and a scan signal of a scan line; the repair circuit module provides a drive current to the standby light-emitting device in response to a data signal provided by the drive circuit module and a short circuit signal or an open circuit signal provided by the detection circuit module. Thus, fault repair of the light-emitting device is implemented, and the display quality of a display device is improved.

Abstract: The present disclosure relates to a transfer device and a transfer method. The transfer device comprises at least one transfer unit, the transfer unit comprises: an exporting device comprising a gas flow inlet, a micro-component inlet and a micro-component exporting port, wherein the gas flow inlet, the micro-component inlet and the micro-component, exporting port are in communication with each other; a micro-component source device for storing a solution and one or more micro-components, wherein the micro-component source device comprises a micro-component outlet, and the micro-component outlet is in communication with the micro-component inlet; and a gas flow output device comprising a gas flow outlet, wherein the gas flow inlet is in communication with the gas flow outlet, and the gas flow output device is used for outputting a gas flow to the exporting device.

Abstract: A light-emitting diode (LED) epitaxial structure, an LED device, and a manufacturing method of an LED epitaxial structure are provided. The LED epitaxial structure 100 includes an n-type confinement layer 20, an n-type waveguide layer 30, a light-emitting layer 40, a p-type waveguide layer 50, and a p-type confinement layer 60 that are sequentially stacked. The p-type waveguide layer 50 includes a first p-type waveguide sub-layer 51, an electron blocking layer 52, and a second p-type waveguide sub-layer 53 that are sequentially stacked, where the first p-type waveguide sub-layer 51 is disposed closer to the light-emitting layer 40 than the second p-type waveguide sub-layer 53, and the electron blocking layer 52 includes at least one oxide layer of aluminumygallium1-yarsenide (AlyGa1-yAs) 521.

Abstract: A light-emitting chip and a method for manufacturing the same are provided. Top surfaces of a first semiconductor layer (11), a first active layer (12), a second semiconductor layer (13) and a substrate (14) included in the light-emitting chip are located on a first horizontal plane, and bottom surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) included in the light-emitting chip are located on a second horizontal plane; and the top surfaces of the first semiconductor layer (11), the first active layer (12), the second semiconductor layer (13) and the substrate (14) serve as light-emitting surfaces.

Abstract: A display device, a sub-pixel repair circuit and a repair method therefor. The sub-pixel repair circuit comprises a drive circuit module, a detection circuit module, a repair circuit module, a light-emitting device, and a standby light-emitting device; the drive circuit module is used for providing a drive current to the light-emitting device in response to a data signal of a data line and a scan signal of a scan line; the repair circuit module provides a drive current to the standby light-emitting device in response to a data signal provided by the drive circuit module and a short circuit signal or an open circuit signal provided by the detection circuit module. Thus, fault repair of the light-emitting device is implemented, and the display quality of a display device is improved.

Abstract: A spherical flip-chip micro-LED, a method for manufacturing the spherical flip-chip micro-LED, and a display panel are provided. The spherical flip-chip micro-LED includes a light-emitting body, a supporting body, a first electrode, a second electrode, and an insulating protective layer. The supporting body is transparent. The first electrode and the second electrode are electrically coupled with the light-emitting body. The insulating protective layer covers the light-emitting body. The light-emitting body, the supporting body, and the insulating protective layer form a spherical structure.

Abstract: A spherical LED chip, a method for manufacturing the same, and a display panel, and a method for spherical LED chip transfer are provided. The spherical LED chip includes a first electrode, a second electrode surrounding the first electrode and having magnetism, and a first insulating protective layer arranged at the outside of the first electrode. The first insulating protective layer and the second electrode form an LED housing configured to wrap the first electrode and with a spherical outer contour.