Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a memory device has a memory array including memory cells. A controller of the memory device evaluates background leakage in order to select a write voltage to apply to a memory cell when performing a programming operation. The write voltage is dynamically selected from two or more write voltages. These write voltages include a first write voltage that is a normal or default voltage, and a second write voltage that is a boosted write voltage. The controller applies a pre-sensing voltage and pre-read voltage to the memory cell, and determines first and second respective currents that result from applying these voltages. In response to determining that the first current exceeds a first threshold (indicating background leakage), and the second current is below a second threshold that is greater than the first threshold (indicating that the memory cell does not snap), the controller selects the second (boosted) write voltage.

Abstract: The present disclosure includes apparatuses, methods, and systems for predicting and compensating for degradation of memory cells. An embodiment includes a memory having a group of memory cells, and circuitry configured to, upon a quantity of sense operations performed on the group of memory cells meeting or exceeding a threshold quantity, perform a sense operation on the group of memory cells using a positive sensing voltage and perform a sense operation on the group of memory cells using a negative sensing voltage, and perform an operation to program the memory cells of the group determined to be in a reset data state by both of the sense operations to the reset data state.

Abstract: The present disclosure includes apparatuses, methods, and systems for predicting and compensating for degradation of memory cells. An embodiment includes a memory having a group of memory cells, and circuitry configured to, upon a quantity of sense operations performed on the group of memory cells meeting or exceeding a threshold quantity, perform a sense operation on the group of memory cells using a positive sensing voltage and perform a sense operation on the group of memory cells using a negative sensing voltage, and perform an operation to program the memory cells of the group determined to be in a reset data state by both of the sense operations to the reset data state.

Abstract: Methods and systems include memory devices with multiple memory cells configured to store data. The memory devices also include a cache configured to store at least a portion of the data to provide access to the at least the portion of the data without accessing the multiple memory cells. The memory devices also include control circuitry configured to receive a read command having a target address. Based on the target address, the control circuitry is configured to determine that the at least the portion of the data is present in the cache. Using the cache, the control circuitry also outputs read data from the cache without accessing the plurality of memory cells.

Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a memory device has a memory array including memory cells. A controller of the memory device evaluates background leakage in order to select a write voltage to apply to a memory cell when performing a programming operation. The write voltage is dynamically selected from two or more write voltages. These write voltages include a first write voltage that is a normal or default voltage, and a second write voltage that is a boosted write voltage. The controller applies a pre-sensing voltage and pre-read voltage to the memory cell, and determines first and second respective currents that result from applying these voltages. In response to determining that the first current exceeds a first threshold (indicating background leakage), and the second current is below a second threshold that is greater than the first threshold (indicating that the memory cell does not snap), the controller selects the second (boosted) write voltage.

Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a memory device has a memory array including memory cells. A controller of the memory device evaluates background leakage in order to select a write voltage to apply to a memory cell when performing a programming operation. The write voltage is dynamically selected from two or more write voltages. These write voltages include a first write voltage that is a normal or default voltage, and a second write voltage that is a boosted write voltage. The controller applies a pre-sensing voltage and pre-read voltage to the memory cell, and determines first and second respective currents that result from applying these voltages. In response to determining that the first current exceeds a first threshold (indicating background leakage), and the second current is below a second threshold that is greater than the first threshold (indicating that the memory cell does not snap), the controller selects the second (boosted) write voltage.

Abstract: The present disclosure includes apparatuses, methods, and systems for increase of a sense current in memory. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to apply, prior to sensing a data state of a memory cell of the plurality of memory cells, a voltage to an access line to which the memory cell is coupled, determine whether an amount of current on the access line in response to the applied voltage meets or exceeds a threshold amount of current, and determine whether to increase a magnitude of a current used to sense the data state of the memory cell based on whether the amount of current on the access line in response to the applied voltage meets or exceeds the threshold amount of current.

Abstract: Methods, systems, and devices for write operation techniques for memory systems are described. In some memory systems, write operations performed on target memory cells of the memory device may disturb logic states stored by one or more adjacent memory cells. Such disturbances may cause reductions in read margins when accessing one or more memory cells, or may cause a loss of data in one or more memory cells. The described techniques may reduce aspects of logic state degradation by supporting operational modes where a host device, a memory device, or both, refrains from writing information to a region of a memory array, or inhibits write commands associated with write operations on a region of a memory array.

Abstract: The present disclosure includes apparatuses, methods, and systems for increase of a sense current in memory. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to count a number of program operations performed on the memory cells of the memory during operation of the memory, and increase a magnitude of a current used to sense a data state of the memory cells of the memory upon the count of the number of program operations reaching a threshold count.

Abstract: The present disclosure includes apparatuses, methods, and systems for increase of a sense current in memory. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to apply, prior to sensing a data state of a memory cell of the plurality of memory cells, a voltage to an access line to which the memory cell is coupled, determine whether an amount of current on the access line in response to the applied voltage meets or exceeds a threshold amount of current, and determine whether to increase a magnitude of a current used to sense the data state of the memory cell based on whether the amount of current on the access line in response to the applied voltage meets or exceeds the threshold amount of current.

Abstract: The present disclosure includes apparatuses, methods, and systems for increase of a sense current in memory. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to apply, prior to sensing a data state of a memory cell of the plurality of memory cells, a voltage to an access line to which the memory cell is coupled, determine whether an amount of current on the access line in response to the applied voltage meets or exceeds a threshold amount of current, and determine whether to increase a magnitude of a current used to sense the data state of the memory cell based on whether the amount of current on the access line in response to the applied voltage meets or exceeds the threshold amount of current.

Abstract: Methods, systems, and devices for write operation techniques for memory systems are described. In some memory systems, write operations performed on target memory cells of the memory device may disturb logic states stored by one or more adjacent memory cells. Such disturbances may cause reductions in read margins when accessing one or more memory cells, or may cause a loss of data in one or more memory cells. The described techniques may reduce aspects of logic state degradation by supporting operational modes where a host device, a memory device, or both, refrains from writing information to a region of a memory array, or inhibits write commands associated with write operations on a region of a memory array.

Abstract: The present disclosure includes apparatuses, methods, and systems for increase of a sense current in memory. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to count a number of program operations performed on the memory cells of the memory during operation of the memory, and increase a magnitude of a current used to sense a data state of the memory cells of the memory upon the count of the number of program operations reaching a threshold count.

Abstract: Described herein are a trolley and a road contact power supply device in cooperative use with the trolley. The trolley has a current collector. The current collector is composed of a contact slide plate, a first bent connecting rod and a second bent connecting rod, where a flat thin strong magnet is arranged on the contact slide plate. The road contact power supply device in cooperative use with the vehicle has a cable, a contact, a compression spring, an elastic sealing sleeve, a seal tube, a seal housing, a movable contact and a fixed contact, where an upper end of the movable contact is connected to a lantern ring made of a ferromagnetic material, and an upper end of the lantern ring is close to an upper surface of the contact.

Abstract: A method for detecting or comparing mechanical strength of macro-molecular polymer materials. The detecting method has the steps of measuring the mechanical strength and the maximum value of the fluorescence absorption spectrum of each of the plurality of samples to form a curve relationship or function relationship between the maximum value of the fluorescence absorption spectrum and the mechanical strength; measuring the maximum value of the fluorescence absorption spectrum of the target material, and using the curve relationship or the function relationship to obtain the mechanical strength of the target material. The plurality of samples and the target material are both prepared from a macro-molecular polymer, and the macro-molecular polymer may be composed of disulfonate-difluorobenzophenone, hydroxyindole and difluorobenzophenone as monomers, and the sulfonate groups of the disulfonate-difluorobenzophenone have metal cations.

Abstract: Methods, systems, and devices for write operation techniques for memory systems are described. In some memory systems, write operations performed on target memory cells of the memory device may disturb logic states stored by one or more adjacent memory cells. Such disturbances may cause reductions in read margins when accessing one or more memory cells, or may cause a loss of data in one or more memory cells. The described techniques may reduce aspects of logic state degradation by supporting operational modes where a host device, a memory device, or both, refrains from writing information to a region of a memory array, or inhibits write commands associated with write operations on a region of a memory array.

Abstract: A method for detecting or comparing mechanical strength of macro-molecular polymer materials. The detecting method has the steps of measuring the mechanical strength and the maximum value of the fluorescence absorption spectrum of each of the plurality of samples to form a curve relationship or function relationship between the maximum value of the fluorescence absorption spectrum and the mechanical strength; measuring the maximum value of the fluorescence absorption spectrum of the target material, and using the curve relationship or the function relationship to obtain the mechanical strength of the target material. The plurality of samples and the target material are both prepared from a macro-molecular polymer, and the macro-molecular polymer may be composed of disulfonate-difluorobenzophenone, hydroxyindole and difluorobenzophenone as monomers, and the sulfonate groups of the disulfonate-difluorobenzophenone have metal cations.

Abstract: A macro-molecular polymer and its preparation method. The macro-molecular polymer takes disulfonate-difluorobenzophenone, hydroxyindole and difluorobenzophenone as monomers for which a sulfonate group of the disulfonate-difluorobenzophenone is a metal cation. High-performance polymers can be obtained with crosslinked structure among molecular chains by a way of interaction of metal cations ??, and further to obtain a high performance polymer having good mechanical properties and stability. Furthermore, the polymer facilitates recovery and has good reproducibility and recycling properties.

Abstract: A method for detecting or comparing mechanical strength of macro-molecular polymer materials. The detecting method has the steps of measuring the mechanical strength and the maximum value of the fluorescence absorption spectrum of each of the plurality of samples to form a curve relationship or function relationship between the maximum value of the fluorescence absorption spectrum and the mechanical strength; measuring the maximum value of the fluorescence absorption spectrum of the target material, and using the curve relationship or the function relationship to obtain the mechanical strength of the target material. The plurality of samples and the target material are both prepared from a macro-molecular polymer, and the macro-molecular polymer may be composed of disulfonate-difluorobenzophenone, hydroxyindole and difluorobenzophenone as monomers, and the sulfonate groups of the disulfonate-difluorobenzophenone have metal cations.

Abstract: A method for detecting or comparing mechanical strength of macro-molecular polymer materials. The detecting method has the steps of measuring the mechanical strength and the maximum value of the fluorescence absorption spectrum of each of the plurality of samples to form a curve relationship or function relationship between the maximum value of the fluorescence absorption spectrum and the mechanical strength; measuring the maximum value of the fluorescence absorption spectrum of the target material, and using the curve relationship or the function relationship to obtain the mechanical strength of the target material. The plurality of samples and the target material are both prepared from a macro-molecular polymer, and the macro-molecular polymer may be composed of disulfonate—difluorobenzophenone, hydroxyindole and difluorobenzophenone as monomers, and the sulfonate groups of the disulfonate—difluorobenzophenone have metal cations.