Patents by Inventor Zhuojie Li
Zhuojie Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11355208Abstract: Apparatus and methods are described to program memory cells and verify stored values programmed into the cells. The next stage in stored memory can be moved to the current verification iteration when certain conditions are met. Verification can include counting bits that exceed a voltage value for a stage being verified to produce a bit count number and determining if the bit count number for the stage being verified meets a threshold value. If the bit count number does not meet the threshold, the verification process can continue with a current verify iteration and thereafter move to a next verify iteration. If the bit count number does meet the threshold, the process can add a next stage to the current verify iteration and thereafter move to a next verify iteration.Type: GrantFiled: June 30, 2020Date of Patent: June 7, 2022Assignee: SanDisk Technologies LLCInventors: Yu-Chung Lien, Fanglin Zhang, Zhuojie Li, Huai-Yuan Tseng
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Publication number: 20210407605Abstract: Apparatus and methods are described to program memory cells and verify stored values programmed into the cells. The next stage in stored memory can be moved to the current verification iteration when certain conditions are met. Verification can include counting bits that exceed a voltage value for a stage being verified to produce a bit count number and determining if the bit count number for the stage being verified meets a threshold value. If the bit count number does not meet the threshold, the verification process can continue with a current verify iteration and thereafter move to a next verify iteration. If the bit count number does meet the threshold, the process can add a next stage to the current verify iteration and thereafter move to a next verify iteration.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Applicant: SanDisk technologies LLCInventors: Yu-Chung Lien, Fanglin Zhang, Zhuojie Li, Huai-Yuan Tseng
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Patent number: 10971222Abstract: An apparatus is provided that includes a plurality of memory cells, a programming circuit configured to apply a plurality of programming pulses to the memory cells, and a scanning circuit configured to repeatedly switch between performing an n-state bitscan after each programming pulse until first predetermined criteria are satisfied, and performing an m-state bitscan after each programming pulse until second predetermined criteria are satisfied, where m>n, and n>0.Type: GrantFiled: December 17, 2019Date of Patent: April 6, 2021Assignee: SanDisk Technologies LLCInventors: Lei Lin, Zhuojie Li, Henry Chin, Cynthia Hsu
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Patent number: 10748622Abstract: Techniques are provided for predictively programming of non-volatile memory, which may reduce the number of verify operations. In one aspect, a programming circuit is configured to program memory cells to a verify low voltage and to program a set of the memory cells to target states. The set comprises memory cells having a threshold voltage between the verify low voltage and a verify high voltage. To program the set of the memory cells to the target states, the programming circuit is configured to apply two or more program pulses to memory cells in the set without verifying whether the memory cells have reached their respective target states, including: apply a first and second program enable voltages to the bit lines associated with the memory cells having different strengths.Type: GrantFiled: February 22, 2019Date of Patent: August 18, 2020Assignee: SanDisk Technologies LLCInventors: Lei Lin, Zhuojie Li, Tai-Yuan Tseng, Henry Chin, Gerrit Jan Hemink
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Patent number: 10726940Abstract: Apparatuses, systems, and methods are disclosed for skip inconsistency correction. A skip circuit is configured to skip memory units for read operations and write operations of a memory array, based on a record of memory units identified as faulty. A skip inconsistency detection circuit is configured to detect a skip inconsistency in read data from a memory array. A correction circuit is configured to correct a skip inconsistency and output corrected read data.Type: GrantFiled: January 3, 2019Date of Patent: July 28, 2020Assignee: SanDisk Technologies LLCInventors: Zhuojie Li, Hua-Ling Cynthia Hsu, Yen-Lung Li, Min Peng
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Publication number: 20200234768Abstract: Techniques are provided for predictively programming of non-volatile memory, which may reduce the number of verify operations. In one aspect, a programming circuit is configured to program memory cells to a verify low voltage and to program a set of the memory cells to target states. The set comprises memory cells having a threshold voltage between the verify low voltage and a verify high voltage. To program the set of the memory cells to the target states, the programming circuit is configured to apply two or more program pulses to memory cells in the set without verifying whether the memory cells have reached their respective target states, including: apply a first and second program enable voltages to the bit lines associated with the memory cells having different strengths.Type: ApplicationFiled: February 22, 2019Publication date: July 23, 2020Applicant: SanDisk Technologies LLCInventors: Lei Lin, Zhuojie Li, Tai-Yuan Tseng, Henry Chin, Gerrit Jan Hemink
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Publication number: 20200126613Abstract: An apparatus is provided that includes a plurality of memory cells, a programming circuit configured to apply a plurality of programming pulses to the memory cells, and a scanning circuit configured to repeatedly switch between performing an n-state bitscan after each programming pulse until first predetermined criteria are satisfied, and performing an m-state bitscan after each programming pulse until second predetermined criteria are satisfied, where m>n, and n>0.Type: ApplicationFiled: December 17, 2019Publication date: April 23, 2020Applicant: SANDISK TECHNOLOGIES LLCInventors: Lei Lin, Zhuojie Li, Henry Chin, Cynthia Hsu
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Publication number: 20200082897Abstract: Apparatuses, systems, and methods are disclosed for skip inconsistency correction. A skip circuit is configured to skip memory units for read operations and write operations of a memory array, based on a record of memory units identified as faulty. A skip inconsistency detection circuit is configured to detect a skip inconsistency in read data from a memory array. A correction circuit is configured to correct a skip inconsistency and output corrected read data.Type: ApplicationFiled: January 3, 2019Publication date: March 12, 2020Applicant: SanDisk Technologies LLCInventors: ZHUOJIE LI, HUA-LING CYNTHIA HSU, YEN-LUNG LI, MIN PENG
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Patent number: 10535401Abstract: An apparatus is provided that includes a plurality of memory cells, a programming circuit configured to apply a plurality of programming pulses to the memory cells, and a scanning circuit configured to repeatedly switch between performing an n-state bitscan after each programming pulse until first predetermined criteria are satisfied, and performing an m-state bitscan after each programming pulse until second predetermined criteria are satisfied, where m>n, and n>0.Type: GrantFiled: June 5, 2018Date of Patent: January 14, 2020Assignee: SanDisk Technologies LLCInventors: Lei Lin, Zhuojie Li, Henry Chin, Cynthia Hsu
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Publication number: 20190371395Abstract: An apparatus is provided that includes a plurality of memory cells, a programming circuit configured to apply a plurality of programming pulses to the memory cells, and a scanning circuit configured to repeatedly switch between performing an n-state bitscan after each programming pulse until first predetermined criteria are satisfied, and performing an m-state bitscan after each programming pulse until second predetermined criteria are satisfied, where m>n, and n>0.Type: ApplicationFiled: June 5, 2018Publication date: December 5, 2019Applicant: SANDISK TECHNOLOGIES LLCInventors: Lei Lin, Zhuojie Li, Henry Chin, Cynthia Hsu