Abstract: Provided are an interaction method and apparatus in a live streaming room, and a device and a storage medium. The method comprises: in response to a trigger operation for a preset duet entry on a live streaming room page, jumping from the live streaming room page to a camera capture page, wherein a host portrait cutout corresponding to the live streaming room page is displayed on the camera capture page and a capture control is provided on the camera capture page acquiring multimedia information captured by a camera, in response to a trigger operation for the capture control on the camera capture page, wherein the multimedia information comprises an image or a video; and synthesizing the multimedia information with the host portrait cutout to obtain a duet multimedia product.

Abstract: Provided are an interaction method and apparatus in a live streaming room, a device, and a storage medium. The method comprises: in response to a trigger operation for a preset drawing entry on a live streaming room page, jumping to a graphic drawing page from the live streaming room page, a drawing trajectory set for a preset object being displayed on the graphical drawing page; when a drawing stroke on the graphic drawing page is received, matching the drawing stroke with the drawing trajectory; and if it is determined that the drawing stroke is successfully matched with the drawing trajectory, displaying prompt information about successful participation in a preset activity, the preset activity and the preset drawing entry having a correspondence.

Abstract: Exemplary semiconductor structures may include a plurality of LED structures and a backplane layer. Exemplary semiconductor structures may also include a light barrier region positioned between the LED structures and the backplane layer. The light barrier region may be operable to absorb light at wavelengths shorter than or about 300 nm and transmit light at wavelengths greater than or about 350.

Abstract: A method includes receiving, by a control module of a wafer transport system, an indication of wafer transporting; calculating, by the control module, a route for transporting a first wafer carrier according to the indication; moving, by a control unit of a wafer transport device of the wafer transport system, the wafer transport device to a first stocker storing the first wafer carrier along the route; performing, by the control unit, a safety monitoring process during a movement of the wafer transport device; stopping, by the control unit, the wafer transport device in front of the first stocker; and identifying, by an identification device of the wafer transport device, the first wafer carrier loaded on a rack of the wafer transport device.

Abstract: The present invention relates to the technical field of chemical industry, and in particular to a method for purifying ethylene carbonate through dynamic crystallization, which includes the following steps: adding an ethylene carbonate-containing raw material into a cavity of a crystallization device under a condition of stirring for dynamic crystallization, wherein the crystallization device further includes a jacket attached and circumferentially disposed along the outer wall of the cavity, the jacket is provided with cooling water therein, a temperature of the cooling water is 1-2.5° C. lower than the temperature in the cavity until a granular ethylene carbonate crystal is generated. The present invention using a rake dryer as the crystallization device to realize dynamic crystallization at a certain rotating speed. The technical solution is simple to operate and short in processing cycle, which facilitates improvement in production efficiency and product quality and is suitable for industrial application.

Abstract: A method and application of flash imaging lidar to measure the attenuation coefficient of water bodies are provided. In this novel method, the real time remote measurements are achieved on the attenuation coefficient of fresh water using flash imaging lidar based on the adjacent frame difference (AFD) method and water body backscattering model. The method solves the problems of low accuracy and high error of data obtained from real-time remote sensing measurement of attenuation coefficients of water bodies in the prior art; the slow speed of measurement data obtained when measuring water bodies, and the poor feasibility and reliability effect of the remotely measured attenuation coefficients of water bodies obtained. The experimental and theoretical analyses fully illustrate the feasibility of real-time remote sensing measurement of the attenuation coefficient of water bodies using the AFD method, which has a strong practical value.

Abstract: Provided herein are compounds useful in the treatment of inflammatory diseases, pharmaceutical compositions comprising the same, and methods of use and preparation thereof. The compounds exhibit inhibitory effects on the expression and secretion of pro-inflammatory cytokines, such as IL-1?, IL-6 and TNF-?.

Abstract: Provided are a light source module and a backlight display module. The light source module includes a flexible printed circuit board and a plurality of side-emitting LEDs. The flexible printed circuit board extends along a central axis. The plurality of side-emitting LEDs are sequentially arranged along the central axis and bonded to the flexible printed circuit board, and a light-emitting surface of one side-emitting LED of the plurality of side-emitting LEDs is perpendicular to a bonding surface of the flexible printed circuit board.

Abstract: Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.

Abstract: Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

Abstract: A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or more process gases to the interior volume of the process chamber, and generating a plasma of the one or more process gases in the interior volume for a first time period when the optical device is on the substrate support, and stopping the plasma after the first time period. A carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% by the plasma.

Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate, a distributed Bragg reflector on the substrate, a seed layer of a metal nitride on the distributed Bragg reflector, and a superconductive wire on the seed layer. The distributed Bragg reflector includes a plurality of bi-layers, each bi-layer including lower layer of a first material and an upper layer of a second material having a higher index of refraction than the first material. The wire is a metal nitride different from the metal nitride of the seed material.

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.