Patents by Inventor Ziqing DUAN
Ziqing DUAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240142684Abstract: An electronic device such as a wristwatch may be provided with conductive structures. The conductive structures may include a sensor electrode for an electrocardiogram (ECG) sensor. A coating may be disposed on the sensor electrode to reflect particular wavelengths of visible light so that the sensor electrode exhibits a desired color. The coating may include adhesion and transition layers on the sensor electrode, an opaque coloring layer on the adhesion and transition layers, and a thin-film interference filter on the opaque coloring layer. The thin-film interference filter may have an uppermost diamond-like carbon (DLC) layer. The DLC layer may contribute to the color response of the coating while concurrently minimizing noise in ECG waveforms gathered by the ECG sensor using the sensor electrode.Type: ApplicationFiled: October 13, 2023Publication date: May 2, 2024Inventors: Bin Fan, Brian S. Tryon, Xiaofan Niu, Chia-Yeh Lee, Frank C. Sit, Hien Minh H Le, Justin S. Shi, Shinjita Acharya, Ziqing Duan
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Publication number: 20230317455Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.Type: ApplicationFiled: June 6, 2023Publication date: October 5, 2023Inventors: Prashant Kumar KULSHRESHTHA, Ziqing DUAN, Karthik Thimmavajjula NARASIMHA, Kwangduk Douglas LEE, Bok Hoen KIM
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Patent number: 11728168Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.Type: GrantFiled: April 1, 2021Date of Patent: August 15, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Karthik Thimmavajjula Narasimha, Kwangduk Douglas Lee, Bok Hoen Kim
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Patent number: 11488856Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).Type: GrantFiled: October 13, 2020Date of Patent: November 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Pramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
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Publication number: 20220249375Abstract: Disclosed are a sustained-release lipid composition and a preparation method therefore. Specifically, the present invention relates to a solid composition containing lipids and a liposome composition obtained therefrom, wherein the liposomes have improved release properties.Type: ApplicationFiled: June 28, 2020Publication date: August 11, 2022Applicants: JIANGSU HENGRUI MEDICINE CO., LTD., SHANGHAI HENGRUI PHARMACEUTICAL CO., LTD.Inventors: Xinyong TONG, Aifeng ZOU, Ziqing DUAN, Pingping WANG, Dong LI, Wei HE
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Patent number: 11094544Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.Type: GrantFiled: July 25, 2019Date of Patent: August 17, 2021Assignee: Applied Materials, Inc.Inventors: David Thompson, Benjamin Schmiege, Jeffrey W. Anthis, Abhijit Basu Mallick, Susmit Singha Roy, Ziqing Duan, Yihong Chen, Kelvin Chan, Srinivas Gandikota
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Publication number: 20210225650Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.Type: ApplicationFiled: April 1, 2021Publication date: July 22, 2021Inventors: Prashant Kumar KULSHRESHTHA, Ziqing DUAN, Karthik Thimmavajjula NARASIMHA, Kwangduk Douglas LEE, Bok Hoen KIM
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Patent number: 11011371Abstract: Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.Type: GrantFiled: November 16, 2017Date of Patent: May 18, 2021Assignee: Applied Materials, Inc.Inventors: Milind Gadre, Shaunak Mukherjee, Praket P. Jha, Deenesh Padhi, Ziqing Duan, Abhijit B. Mallick
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Patent number: 10971364Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.Type: GrantFiled: December 13, 2018Date of Patent: April 6, 2021Assignee: Applied Materials, Inc.Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Karthik Thimmavajjula Narasimha, Kwangduk Douglas Lee, Bok Hoen Kim
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Patent number: 10930475Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.Type: GrantFiled: November 13, 2018Date of Patent: February 23, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Abdul Aziz Khaja, Zheng John Ye, Amit Kumar Bansal
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Patent number: 10930503Abstract: Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.Type: GrantFiled: April 24, 2019Date of Patent: February 23, 2021Assignee: Applied Materials, Inc.Inventors: Ziqing Duan, Abhijit Basu Mallick
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Publication number: 20210028055Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).Type: ApplicationFiled: October 13, 2020Publication date: January 28, 2021Applicant: Applied Materials, Inc.Inventors: Pramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
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Publication number: 20210013038Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.Type: ApplicationFiled: September 22, 2020Publication date: January 14, 2021Applicant: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Pramit Manna, Yihong Chen, Ziqing Duan, Rui Cheng, Shishi Jiang
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Patent number: 10886172Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.Type: GrantFiled: April 14, 2020Date of Patent: January 5, 2021Assignee: Applied Materials, Inc.Inventors: Yihong Chen, Ziqing Duan, Abhijit Basu Mallick, Kelvin Chan
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Patent number: 10854511Abstract: Methods for forming 3D-NAND devices comprising recessing a poly-Si layer to a depth below a spaced oxide layer. A liner is formed on the spaced oxide layer and not on the recessed poly-Si layer. A metal layer is deposited in the gaps on the liner to form wordlines.Type: GrantFiled: June 5, 2018Date of Patent: December 1, 2020Assignee: Applied Materials, Inc.Inventors: Yihong Chen, Yong Wu, Chia Cheng Chin, Xinliang Lu, Srinivas Gandikota, Ziqing Duan, Abhijit Basu Mallick
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Patent number: 10840186Abstract: A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.Type: GrantFiled: July 25, 2019Date of Patent: November 17, 2020Assignee: Applied Materials, Inc.Inventors: Susmit Singha Roy, Ziqing Duan, Abhijit Basu Mallick, Praburam Gopalraja
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Patent number: 10811303Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).Type: GrantFiled: January 28, 2019Date of Patent: October 20, 2020Assignee: Applied Materials, Inc.Inventors: Pramit Manna, Ludovic Godet, Rui Cheng, Erica Chen, Ziqing Duan, Abhijit Basu Mallick, Srinivas Gandikota
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Patent number: 10784107Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.Type: GrantFiled: May 2, 2018Date of Patent: September 22, 2020Assignee: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Pramit Manna, Yihong Chen, Ziqing Duan, Rui Cheng, Shishi Jiang
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Patent number: 10770349Abstract: Processing methods to create self-aligned contacts are described. A conformal liner can be deposited in a feature in a substrate surface leaving a gap between the walls of the liner. A tungsten film can be deposited in the gap of the liner and volumetrically expanded. The expanded film can be removed and replaced with a contact material to a make a contact. In some embodiments, a conformal tungsten film can be formed in the feature leaving a gap between the walls. A dielectric can be deposited in the gap and the conformal tungsten film can be volumetrically expanded to grow two pillars. The pillars can be removed and replaced with a contact material to make two contacts.Type: GrantFiled: February 22, 2018Date of Patent: September 8, 2020Assignee: Applied Materials, Inc.Inventors: Abhijit Basu Mallick, Ziqing Duan
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Publication number: 20200243382Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.Type: ApplicationFiled: April 14, 2020Publication date: July 30, 2020Inventors: Yihong Chen, Ziqing Duan, Abhijit Basu Mallick, Kelvin Chan