Abstract: A power transistor incorporating a constant-voltage diode maintains the breakdown voltage of the constant-voltage diode at a specified level and prevents local breakdown of an insulating film located between an A1 field plate electrode and a base region of the transistor by spacing the A1 field plate electrode located on a collector region by a distance "d" from the base region.

Abstract: An integrated circuit device for acceleration detection (100) includes a thick substrate (1) and a semiconductor strain sensor (2) provided on the thick substrate (1) with conductive solder bump electrodes (8) interposed therebetween. The semiconductor strain sensor (2) has a mass holding part (2b), an acceleration sensing part (2a) provided with a piezoresistance layer, a base end part (2c) fixed on the solder bump electrode (8) and a balance keeping part (2d). Electric signals obtained from the semiconductor strain sensor (2) are connected to pattern wiring lines (7) which are provided on the thick substrate (1) by means of the solder bump electrode (8) interposed therebetween. A space (W) between the thick substrate (1) and the mass holding part (2b) depends upon the solder bump electrode (8).

Abstract: A control circuit for a vehicle safety device of the invention includes a starting circuit for starting the vehicle safety device by electrical energy supplied from a power supply section. A starting signal generating circuit detects vehicle collision and generates a starting signal based upon the results of the detection. A starting control circuit is provided to detect a vehicle collision and generate a starting signal. A starting control circuit is connected between a power supply section and the starting circuit. The starting control circuit supplies current from the power supply section to the starting circuit when the starting signal has been generated by the starting signal generating circuit, and blocks supply of current from the power supply section to the starting circuit when the current value has exceeded a predetermined value.

Abstract: A hybrid integrated circuit device includes a circuit board having at least two electrical conductors; a chip resistor bridgingly disposed across two of the electrical conductors of the circuit board; and solder electrically connecting the chip resistor to the two electrical conductors. The chip resistor has an electrically insulating substrate, two electrodes disposed on the electrically insulating substrate, separated from each other, and each electrode has a contact end electrically contacting the electrical conductors of the circuit board and a resistor element disposed on the electrically insulating substrate and electrically connected to the contact ends of the electrodes. The solder electrically connects the electrodes of the chip resistor to the electrical conductors of the circuit board.

Abstract: A resin sealed semiconductor device includes a current-detecting resistance for detecting current flowing in a semiconductor element that is a metallic resistance having a coefficient of thermal expansion almost equal to that of the lead frame. Compared to a conventional ceramic chip resistance, its coefficient of thermal expansion differs less from that of the lead frame, thereby preventing deterioration caused by heat stress.

Abstract: A resin sealed semiconductor device has a plurality of current-detecting resistors mounted and electrically connected in parallel on leads of a lead frame for detecting the current flowing in a semiconductor element mounted on the lead frame. Mounting n current-detecting resistors in parallel reduces the increase in resistance due to mounting to 1/nth the conventional value. Accordingly, changes in resistance values during mounting are minimized for accurate current measurement.

Abstract: A semiconductor device has a semiconductor substrate including a base region and an emitter region in the base region. The emitter region in the base region has a comb-teeth-shaped outer edge. The emitter region has a window through which the base region is exposed. The window has an extended ares to reach portions of the emitter region near the comb-teeth-shaped outer edge of the emitter region. Consequently, the area of junction between the window and the emitter region os increased to suppress concentration of electrical current in the window and to improve electrical characteristics such as secondary yield breakdown strength.

Abstract: A hybrid integrated circuit device has a magnetic sensor formed directly on a substrate by photolithography. Alternatively, a flip chip type magnetic sensor is mounted on a substrate by fusion. The magnetic sensor can be mounted on the substrate with high positional precision.

Abstract: A hybrid integrated circuit device has a primary heat sink and a secondary heat sink. A heat-generating semiconductor chip is mounted on the primary heat sink. A thermocouple is embedded in a portion of the primary heat sink immediately below a heat-generating portion of the semiconductor chip. The thermocouple measures the temperature of the heat-generating portion of the semiconductor chip with a high degree of accuracy. Power supplied to the semiconductor chip is controlled in accordance with the measured temperature of the heat-generating portion of the semiconductor chip, thus enabling the semiconductor chip to operate at its full output performance without risk of breakdown due to overheating.