Patents by Inventor Zishu Zhang
Zishu Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9235134Abstract: Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.Type: GrantFiled: August 16, 2010Date of Patent: January 12, 2016Assignee: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan Millward
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Patent number: 9140977Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: GrantFiled: May 13, 2013Date of Patent: September 22, 2015Assignee: MICRON TECHNOLOGY, INC.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael Hyatt, Jianming Zhou, Scott L. Light, Dan B. Millward
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Publication number: 20150015860Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.Type: ApplicationFiled: September 29, 2014Publication date: January 15, 2015Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael D. Hyatt, Jianming Zhou
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Patent number: 8883372Abstract: A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.Type: GrantFiled: June 5, 2012Date of Patent: November 11, 2014Assignee: Nanya Technology Corp.Inventors: Scott Light, Dan Millward, Anton Devilliers, Yuan He, Michael Hyatt, Lijing Gou, Kaveri Jain, Zishu Zhang, Jianming Zhou
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Patent number: 8845908Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imagable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imagable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imagable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.Type: GrantFiled: August 24, 2010Date of Patent: September 30, 2014Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou
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Publication number: 20140247476Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.Type: ApplicationFiled: May 14, 2014Publication date: September 4, 2014Applicant: Micron Technology, Inc.Inventors: Yuan He, Jianming Zhou, Scott L. Light, Anton deVilliers, Kaveri Jain, Zishu Zhang, Dan Millward
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Patent number: 8815497Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: GrantFiled: July 15, 2013Date of Patent: August 26, 2014Assignee: Micron Technology, Inc.Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton J. deVillers, Jianming Zhou, Yuan He, Michael Hyatt, Scott L. Light
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Patent number: 8736814Abstract: Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.Type: GrantFiled: June 13, 2011Date of Patent: May 27, 2014Assignee: Micron Technology, Inc.Inventors: Yuan He, Jianming Zhou, Scott L. Light, Anton deVilliers, Kaveri Jain, Zishu Zhang, Dan Millward
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Patent number: 8728721Abstract: A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.Type: GrantFiled: August 8, 2011Date of Patent: May 20, 2014Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Kaveri Jain, Zishu Zhang, Anton J deVilliers, Dan Millward, Jianming Zhou, Michael D. Hyatt
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Patent number: 8625078Abstract: A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map.Type: GrantFiled: April 6, 2011Date of Patent: January 7, 2014Assignee: Nanya Technology Corp.Inventors: Jianming Zhou, Scott Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton DeVilliers, Michael Hyatt
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Publication number: 20130323628Abstract: A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.Type: ApplicationFiled: June 5, 2012Publication date: December 5, 2013Inventors: SCOTT LIGHT, DAN MILLWARD, ANTON DEVILLIERS, YUAN HE, MICHAEL HYATT, LIJING GOU, KAVERI JAIN, ZISHU ZHANG, JIANMING ZHOU
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Publication number: 20130302981Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: ApplicationFiled: July 15, 2013Publication date: November 14, 2013Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton J. deVilliers, Jianming Zhou, Yuan He, Michael D. Hyatt, Scott L. Light
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Publication number: 20130252142Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: ApplicationFiled: May 13, 2013Publication date: September 26, 2013Applicant: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael Hyatt, Jianming Zhou, Scott L. Light, Dan B. Millward
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Patent number: 8507191Abstract: Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.Type: GrantFiled: January 7, 2011Date of Patent: August 13, 2013Assignee: Micron Technology, Inc.Inventors: Dan B. Millward, Yuan He, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Jianming Zhou, Kaveri Jain, Scott Light, Michael Hyatt
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Patent number: 8486611Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: GrantFiled: July 14, 2010Date of Patent: July 16, 2013Assignee: Micron Technology, Inc.Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton de Villiers, Jianming Zhou, Yuan He, Michael Hyatt, Scott L. Light
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Patent number: 8476002Abstract: Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.Type: GrantFiled: September 10, 2012Date of Patent: July 2, 2013Assignee: Micron Technology, Inc.Inventors: Zishu Zhang, Anton J. deVilliers, Robert Carr, Farrell Good
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Patent number: 8440371Abstract: An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: GrantFiled: January 7, 2011Date of Patent: May 14, 2013Assignee: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. DeVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan B. Millward
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Patent number: 8409457Abstract: A method of forming a photoresist-comprising pattern on a substrate includes forming a patterned first photoresist having spaced first masking shields in at least one cross section over a substrate. The first masking shields are exposed to a fluorine-containing plasma effective to form a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the first masking shields. A second photoresist is deposited over and in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating. The second photoresist which is in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating is exposed to a pattern of actinic energy and thereafter spaced second masking shields are formed in the one cross section which comprise the second photoresist and correspond to the actinic energy pattern. The first and second masking shields together form at least a part of a photoresist-comprising pattern on the substrate.Type: GrantFiled: August 29, 2008Date of Patent: April 2, 2013Assignee: Micron Technology, Inc.Inventors: Zishu Zhang, Hongbin Zhu, Anton deVilliers, Alex Schrinsky
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Publication number: 20130040245Abstract: A method of processing a substrate includes forming first photoresist on a substrate. A portion of the first photoresist is selectively exposed to actinic energy and then the first photoresist is negative tone developed to remove an unexposed portion of the first photoresist. Second photoresist is formed on the substrate over the developed first photoresist. A portion of the second photoresist is selectively exposed to actinic energy and then the second photoresist is negative tone developed to remove an unexposed portion of the second photoresist and form a pattern on the substrate which comprises the developed first photoresist and the developed second photoresist. Other implementations are disclosed.Type: ApplicationFiled: August 8, 2011Publication date: February 14, 2013Inventors: Scott L. Light, Kaveri Jain, Zishu Zhang, Anton J. de Villiers, Dan Millward, Jianming Zhou, Michael D. Hyatt
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Publication number: 20130004889Abstract: Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material.Type: ApplicationFiled: September 10, 2012Publication date: January 3, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Zishu Zhang, Anton deVilliers, Robert Carr, Farrell Good