Abstract: The single crystal furnace charging system includes a control system configured to send a charging request, a material preparation system configured to receive the charging request and prepare materials based on the charging request, a feeding system configured to receive the charging request, obtain the materials, and compare an actual feeding amount with a preset feeding amount to obtain a difference between the actual feeding amount and the preset charging amount, in response to the difference being within a first preset threshold, charge a single crystal furnace. The single crystal furnace charging system further includes a calibration system configured to obtain a total charging weight, and obtain a difference between the total charging weight and a preset charging amount of the single crystal furnace, in response to the difference being within a second preset threshold, update a total charging amount to the total charging weight.

Abstract: A method for manufacturing a solar cell, a method for manufacturing a monocrystalline silicon wafer and a photovoltaic module. The method for manufacturing a monocrystalline silicon wafer includes: providing a monocrystalline silicon rod; squaring the monocrystalline silicon rod to form a quasi-square silicon rod with quasi-square cross-section having an arc, a length of the arc being not less than 15 mm; slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer having the arc. The method for manufacturing at least one solar cell includes: using the method described above to obtain a quasi-square silicon wafer having an arc; forming a first solar cell by processing the quasi-square silicon wafer; scribing the first solar cell to obtain a square-shaped sub-solar cell and at least one strip-shaped sub-solar cell. The above methods improve the utilization rate of the monocrystalline silicon rod and reduce production cost.

Abstract: A single crystal furnace is provided, including a main furnace chamber; an auxiliary furnace chamber communicating with the main furnace chamber; and a material chamber provided with a charging inlet and a charging mechanism, wherein the material chamber is communicated with the main furnace chamber through the charging inlet, the charging mechanism is telescopically coupled to the charging inlet for charging materials into a crucible in the main furnace chamber. In the single crystal furnace, the material chamber is provided, so that charging operation may be performed during taking out the monocrystalline silicon rod, thereby effectively shortening the time consumed by taking out the monocrystalline silicon rod and the charging operation, and improving production efficiency.

Abstract: Provided is a method for manufacturing at least one solar cell, a method for manufacturing a monocrystalline silicon wafer and a photovoltaic module. The method for manufacturing a monocrystalline silicon wafer includes: providing a monocrystalline silicon rod; squaring the monocrystalline silicon rod to form a quasi-square silicon rod with quasi-square cross-section having an arc, a length of the arc being not less than 15 mm; slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer having the arc. The method for manufacturing at least one solar cell includes: using the method described above to obtain a quasi-square silicon wafer having an arc; forming a first solar cell by processing the quasi-square silicon wafer; scribing the first solar cell to obtain a square-shaped sub-solar cell and at least one strip-shaped sub-solar cell. The above methods improve the utilization rate of the monocrystalline silicon rod and reduce production cost.

Abstract: Disclosed are a Czochralski single crystal furnace for preparing monocrystalline silicon and a method for preparing monocrystalline silicon using the same. The Czochralski single crystal furnace is switchable between a first operation state and a second operation state. In response to the Czochralski single crystal furnace being switched between the first operation state and the second operation state, a first heat-preserving barrel moves relative to a second heat-preserving barrel. In response to the Czochralski single crystal furnace being in the first operation state, a side wall of the second heat-preserving barrel covers a first opening so as to isolate a reaction chamber from outside Czochralski single crystal furnace. In response to the Czochralski single crystal furnace being in the second operation state, the second heat-preserving barrel exposes the first opening, so that the reaction chamber is connected to the outside through the first opening.

Abstract: Provided is a device for manufacturing monocrystalline silicon and a cooling method thereof. The device includes a crystal puller and a cooling apparatus. A heating apparatus and a first thermal insulation structure are arranged in the crystal puller. The first thermal insulation structure is located above the heating apparatus. The cooling apparatus includes a jacking mechanism and a cooling pipe. The cooling pipe is capable of moving into or out of the crystal puller. When the cooling pipe enters the crystal puller, the cooling pipe is connected to the first thermal insulation structure, and the cooling pipe lifts the first thermal insulation structure through the jacking mechanism to increase a distance between the first thermal insulation structure and the heating apparatus, and a cooling medium is output to the cooling pipe to cool the crystal puller. The cooling medium may be liquid or gas.

Abstract: A single crystal furnace is provided, including a main furnace chamber; an auxiliary furnace chamber communicating with the main furnace chamber; and a material chamber provided with a charging inlet and a charging mechanism, wherein the material chamber is communicated with the main furnace chamber through the charging inlet, the charging mechanism is telescopically coupled to the charging inlet for charging materials into a crucible in the main furnace chamber. In the single crystal furnace, the material chamber is provided, so that charging operation may be performed during taking out the monocrystalline silicon rod, thereby effectively shortening the time consumed by taking out the monocrystalline silicon rod and the charging operation, and improving production efficiency.

Abstract: Provided is a method for manufacturing at least one solar cell, a method for manufacturing a monocrystalline silicon wafer and a photovoltaic module. The method for manufacturing a monocrystalline silicon wafer includes: providing a monocrystalline silicon rod; squaring the monocrystalline silicon rod to form a quasi-square silicon rod with quasi-square cross-section having an arc, a length of the arc being not less than 15 mm; slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer having the arc. The method for manufacturing at least one solar cell includes: using the method described above to obtain a quasi-square silicon wafer having an arc; forming a first solar cell by processing the quasi-square silicon wafer; scribing the first solar cell to obtain a square-shaped sub-solar cell and at least one strip-shaped sub-solar cell. The above methods improve the utilization rate of the monocrystalline silicon rod and reduce production cost.