Abstract: In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.

Abstract: A coating is provided over a fresh layer of resist, such as a chemically amplified resist (CAR). The overcoat stabilizes process control and makes it possible to precoat the CAR on wafer or mask blanks some time prior to exposure.

Abstract: An interrupted development, multi-cycle development process, in combination with an aqueous photoresist developer composition enables development of electron-beam exposed novolak-resin based photoresists with resolution of less than 0.20 &mgr;m, contrast >5, and dark loss less than 10%. The developer composition of this invention includes a metal alkali, a dialkylalkanolamine adjuvant, a surfactant and a buffer.

Abstract: An aqueous photolithographic resist developer composition including a metal alkali, a dialkylalkanolamine adjuvant, a surfactant, and a buffer increases the speed of novolak resin-based resists exposed to high energy radiation to permit high resolution photolithographic patterning of the resist. A multi-cycle process, in combination with the developer composition of this invention, enables resist resolution capabilities of less than 0.20 .mu.m, with contrast >5, and dark loss less than 10%.