Abstract: The present disclosure discloses a bonding structure, wherein a plurality of first bonding pads is located on a first substrate. A second substrate is disposed to partially face first substrate. A plurality of second bonding pads is located on second substrate with one side, and partially overlapped with the first bonding pads with the other side to form a bonding region and a peripheral region located in the periphery of the bonding region. An anisotropic conductive film is disposed between first bonding pads and second bonding pads. The anisotropic conductive film includes a plurality of conductive particles. At least one groove structure is disposed in the periphery region. When the conductive particles of the anisotropic conductive film are moving during the bonding process, the groove structure can accommodate the conductive particles moved hereto. Accordingly, short circuit caused by accumulation of the conductive particles in the bonding process can be avoided.

Abstract: The present disclosure discloses a bonding structure, wherein a plurality of first bonding pads is located on a first substrate. A second substrate is disposed to partially face first substrate. A plurality of second bonding pads is located on second substrate with one side, and partially overlapped with the first bonding pads with the other side to form a bonding region and a peripheral region located in the periphery of the bonding region. An anisotropic conductive film is disposed between first bonding pads and second bonding pads. The anisotropic conductive film includes a plurality of conductive particles. At least one move structure is disposed in the periphery region. When the conductive particles of the anisotropic conductive film are moving during the bonding process, the groove structure can accommodate the conductive particles moved hereto. Accordingly, short circuit caused by accumulation of the conductive particles in the bonding process can be avoided.