Abstract: Disclosed are a zirconia-based antibacterial denture material and a preparation method thereof. The zirconia-based antibacterial denture material includes components with the following mass parts: 75 to 80 parts of zirconium oxide, 2 to 5 parts of nanosized silver oxide, 3 to 5 parts of nanosized zinc oxide, 1 to 3 parts of nanosized lanthanum oxide, 1 to 3 parts of nanosized yttrium oxide, 1 to 2 parts of cerium oxide, and 1 to 2 parts of size control agent. The zirconia-based antibacterial denture material has good antibacterial effect and high strength.

Abstract: Disclosed are a glass ceramic material, a preparation method thereof, and a denture. The glass ceramic material includes the following components by mass percentage: 58% to 72% of SiO2, 0% to 4% of Al2O3, 0% to 5% of Na2O, 3% to 8% of K2O, 8% to 17% of Li2O, 2.5% to 5% of P2O5, 0% to 2% of MgO, 0% to 2.5% of B2O3, 0% to 5% of ZnO and 0% to 3% of ZrO2. In the present application, by optimizing the composition and ratio of the glass ceramic material, and combining with a matching process system, it is possible to control the formation of lithium disilicate while the crystallinity of lithium metasilicate glass ceramic can be improved without an introduction of a high ratio of zirconia content, thereby improving the grinding performance of the glass ceramic. The present application is applicable to the field of material technology.

Abstract: Disclosed are a glass ceramic composition, a preparation method and application thereof. The glass ceramic composition according to the present application includes: 58% to 72% of SiO2; 0% to 4% of Al2O3; 0% to 5% of Na2O; 3% to 8% of K2O; 8% to 17% of Li2O; 2.5% to 5% of P2O5, 0% to 2% of MgO, 0% to 2.5% of B2O3; 0% to 5% of ZnO; and 0% to 3% of ZrO2. It is possible to prepare such lithium metasilicate glass ceramic with a crystal phase of lithium metasilicate, a crystallinity of greater than 50%, a grain size of 30 nm to 60 nm and a hardness of 500 kgf/mm2 to 590 kgf/mm2. The composition does not require an introduction of a high proportion of zirconia content, and can be ground to a thickness of 0.2 mm without edge collapse.

Abstract: Disclosed are a composite resin denture porcelain block, a preparation method thereof and a composite resin denture. The composite resin denture porcelain block includes 0.1% to 15% of carbamate dimethacrylate, 0.1% to 10% of bisphenol A-di glycidyl methacrylate, 3% to 20% of triethylene glycol dimethacrylate, 35% to 85% of glass powder, 0.1% to 8% of ZrO2, 3% to 15% of SiO2, 0.1% to 40% of ZrO2—SiO2 composite powder, 2% to 17% of diatomite, 0.01% to 3% of benzoyl peroxide, 0.01% to 3% of N,N dihydroxyethyl p-toluidine, 0.01% to 3% of 2,6 di-tert-butyl p-cresol, 0.001% to 0.2% of iron oxide red, 0.001% to 0.2% of iron oxide black, and 0.001% to 0.5% of iron oxide yellow. The composite resin denture porcelain block of the present application uses carbamate dimethacrylate, bisphenol A-di glycidyl methacrylate, and triethylene glycol dimethacrylate as the resin matrix.

Abstract: Disclosed are a multi-layer porcelain block, a preparation method thereof and a denture. The multi-layer porcelain block includes a first zirconia powder layer, a second zirconia powder layer, a third zirconia powder layer, a fourth zirconia powder layer, a fifth zirconia powder layer, a sixth zirconia powder layer, a seventh zirconia powder layer, and an eighth zirconia powder layer laid in sequence. The zirconia powers in the first to eighth zirconia powder layers are doped with yttria. The first zirconia powder layer accounts for 13% to 17% by mass, the second zirconia powder layer accounts for 8% to 12% by mass, the third zirconia powder layer accounts for 10% to 14% by mass, the fourth zirconia powder layer accounts for 10% to 14% by mass, the fifth zirconia powder layer accounts for 10% to 14% by mass, the sixth zirconia powder layer accounts for 10% to 14% by mass.

Abstract: A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases.

Abstract: A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases.

Abstract: A ring or collar surrounding a semiconductor workpiece in a plasma chamber. According to one aspect, the ring has an elevated collar portion having an inner surface oriented at an obtuse angle to the plane of the workpiece, this angle preferably being 135°. This angular orientation causes ions bombarding the inner surface of the elevated collar to scatter in a direction more parallel to the plane of the workpiece, thereby reducing erosion of any dielectric shield at the perimeter of the workpiece, and ameliorating spatial non-uniformity in the plasma process due to any excess ion density near such perimeter. In a second aspect, the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectric shield from reaction with, or erosion by, the process gases.

Abstract: A plasma etching process for etching a carbon-based low-k dielectric layer in a multi-layer inter-level dielectric. The low-k dielectric may be divinyl siloxane-benzocyclobutene (BCB), which contains about 4% silicon, the remainder being carbon, hydrogen, and a little oxygen. The BCB etch uses an etching gas of oxygen, a fluorocarbon, and nitrogen and no argon. An N2/O2 ratio of between 1:1 and 3:1 produces vertical walls in the BCB. In a dual-damascene structure, the inter-level dielectric includes two BCB layers, each underlaid by a respective stop layer. Photolithography with an organic photoresist needs a hard mask of silicon oxide or nitride over the upper BCB layer. After the BCB etch has cleared all the photoresist, the bias power applied to the cathode supporting the wafer needs to be set to a low value while the separately controlled plasma source power is set reasonably high, thereby reducing faceting of the exposed hard mask.

Abstract: A process for etching an oxidized organo-silane film exhibiting a low dielectric constant and having a most preferred atomic composition of 52% hydrogen, 8% carbon, 19% silicon, and 21% oxygen. The process of etching deep holes in the organo-silane film while stopping on a nitride or other non-oxide layer is preferably performed in an inductively coupled high-density plasma reactor with a main etching gas mixture of a fluorocarbon, such as C4F8, and argon while the pedestal electrode supporting the wafer is RF biased. For very deep and narrow holes, oxygen or nitrogen may be added to volatize carbon. In an integrated process in which an oxygen plasma is used either for the film etching or for post-etch treatments such as ashing or nitride removal, the oxygen plasma should be excited only when no RF bias is applied to the pedestal electrode, and thereafter the sample should be annealed in an inert environment to recover the low dielectric constant.

Abstract: A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals.