Patents by Inventor Zsolt Nenyei
Zsolt Nenyei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8575521Abstract: Temperature control in an RTP system can be improved by consideration of one or more witness structures different from the wafer (or other semiconductor object) being processed. For example, power coupling between the RTP heating system and witness structure can be used to adjust one or more control parameters, such as model definitions, that are used by the RTP system to control wafer heating. As another example, a stored trajectory of a desired witness structure temperature or other property can be used as a basis for control during a processing cycle. Thus, the witness structure may be controlled “closed-loop” while the wafer is heated “open-loop.” As a further example, a heat flux between the RTP heating system and witness structure can be used to determine radiant energy from the heating system that is incident on the witness structure. One or more control actions can be taken based on this incident energy.Type: GrantFiled: April 1, 2008Date of Patent: November 5, 2013Assignee: Mattson Technology, Inc.Inventors: Zsolt Nenyei, Paul Janis Timans
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Publication number: 20120298039Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.Type: ApplicationFiled: August 6, 2012Publication date: November 29, 2012Applicant: MATTSON TECHNOLOGY, INC.Inventors: Bruce W. PEUSE, Yaozhi HU, Paul Janis TIMANS, Guangcai XING, Wilfried LERCH, Sing-Pin TAY, Stephen E. SAVAS, Georg ROTERS, Zsolt NENYEI, Ashok SINHA
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Patent number: 8236706Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.Type: GrantFiled: December 12, 2008Date of Patent: August 7, 2012Assignee: Mattson Technology, Inc.Inventors: Bruce W. Peuse, Yaozhi Hu, Paul Janis Timans, Guangcai Xing, Wilfried Lerch, Sing-Pin Tay, Stephen E. Savas, Georg Roters, Zsolt Nenyei, Ashok Sinha
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Patent number: 7977258Abstract: Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.Type: GrantFiled: April 6, 2007Date of Patent: July 12, 2011Assignee: Mattson Technology, Inc.Inventors: Zsolt Nenyei, Paul J. Timans, Wilfried Lerch, Jüergen Niess, Manfred Falter, Patrick Schmid, Conor Patrick O'Carroll, Rudy Cardema, Igor Fidelman, Sing-Pin Tay, Yao Zhi Hu, Daniel J. Devine
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Publication number: 20100151694Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.Type: ApplicationFiled: December 12, 2008Publication date: June 17, 2010Applicant: MATTSON TECHNOLOGY, INC.Inventors: Bruce W. Peuse, Yaozhi Hu, Paul Janis Timans, Guangcai Xing, Wilfried Lerch, Sing-Pin Tay, Stephen E. Savas, Georg Roters, Zsolt Nenyei, Ashok Sinha
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Patent number: 7704898Abstract: Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542,543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical actuation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.Type: GrantFiled: October 28, 2004Date of Patent: April 27, 2010Assignee: Mattson Technology, Inc.Inventors: Zsolt Nenyei, Steffen Frigge, Patrick Schmid, Thorsten Hülsmann, Thomas Theiler
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Publication number: 20090242543Abstract: Temperature control in an RTP system can be improved by consideration of one or more witness structures different from the wafer (or other semiconductor object) being processed. For example, power coupling between the RTP heating system and witness structure can be used to adjust one or more control parameters, such as model definitions, that are used by the RTP system to control wafer heating. As another example, a stored trajectory of a desired witness structure temperature or other property can be used as a basis for control during a processing cycle. Thus, the witness structure may be controlled “closed-loop” while the wafer is heated “open-loop.” As a further example, a heat flux between the RTP heating system and witness structure can be used to determine radiant energy from the heating system that is incident on the witness structure. One or more control actions can be taken based on this incident energy.Type: ApplicationFiled: April 1, 2008Publication date: October 1, 2009Inventors: Zsolt Nenyei, Paul Janis Timans
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Publication number: 20080311761Abstract: Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542, 543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical acutation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.Type: ApplicationFiled: October 28, 2004Publication date: December 18, 2008Inventors: Zsolt Nenyei, Steffen Frigge, Patrick Schmid, Thorsten Hulsmann, Thomas Theiler
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Publication number: 20080248657Abstract: Process and system for processing wafer-shaped objects, such as semiconductor wafers is disclosed. In accordance with the present disclosure, a multiple of two wafers are processed in a thermal processing chamber. The thermal processing chamber is in communication with at least one heating device for heating the wafers. The wafers are placed in the thermal processing chamber in a face-to-face configuration or in a back-to-back configuration.Type: ApplicationFiled: April 6, 2007Publication date: October 9, 2008Inventors: Zsolt Nenyei, Paul J. Timans, Wilfried Lerch, Juergen Niess, Manfred Falter, Patrick Schmid, Conor Patrick O'Carroll, Rudy Cardema, Igor Fidelman, Sing-Pin Tay, Yao Zhi Hu, Daniel J. Devine
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Publication number: 20070117413Abstract: A first process for the production of a thin nitrogenous layer on a semiconductor surface by contacting at least a part of the surface with a nitrogenous liquid, by applying an electrical voltage between the surface, the liquid and an electrode according to a given voltage-time curve until a layer thickness of less than 5 nm is formed, and then separating the surface from the liquid. A second process for the production of a thin nitrogenous layer on a metal surface or on a metal layer located on a substrate by at least a part of the surface or the metal layer with a nitrogenous liquid, by applying an electrical voltage between the surface or metal layer, the liquid and an electrode according to a given voltage-time curve until a layer thickness of less than 50 nm is formed, and then separating the surface or the metal layer from the liquid. A third process for detaching an oxygen-containing and/or nitrogenous layer on a semiconductor or a metal surface.Type: ApplicationFiled: August 26, 2004Publication date: May 24, 2007Inventor: Zsolt Nenyei
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Patent number: 7101812Abstract: A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.Type: GrantFiled: March 10, 2003Date of Patent: September 5, 2006Assignee: Mattson Technology, Inc.Inventors: Ignaz Eisele, Alexandra Ludsteck, Jörg Schulze, Zsolt Nenyei, Waltraud Dietl, Georg Roters
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Patent number: 6830631Abstract: A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.Type: GrantFiled: September 25, 2002Date of Patent: December 14, 2004Assignee: Steag RTP Systems GmbHInventors: Zsolt Nenyei, Wilfried Lerch, Jürgen Niess, Thomas Graf
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Publication number: 20040058557Abstract: A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.Type: ApplicationFiled: March 10, 2003Publication date: March 25, 2004Applicant: Mattson Technology, Inc.Inventors: Ignaz Eisele, Alexandra Ludsteck, Jorg Schulze, Zsolt Nenyei, Waltraud Dietl, Georg Roters
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Publication number: 20030155000Abstract: A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.Type: ApplicationFiled: September 25, 2002Publication date: August 21, 2003Inventors: Zsolt Nenyei, Wilfried Lerch, Jurgen Niess, Thomas Graf
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Patent number: 6100149Abstract: A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.Type: GrantFiled: July 1, 1997Date of Patent: August 8, 2000Assignee: Steag RTP SystemsInventors: Zsolt Nenyei, Wilfried Lerch, Helmut Sommer
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Patent number: 5872889Abstract: A closable enclosure for rapid thermal processing of semiconductor wafers is presented, wherein the closable enclosure has an enclosed volume less than 10 times the volume of the wafer, and wherein the closable enclosure may be closed about the wafer while the closable enclosure is surrounded by the process gas.Type: GrantFiled: January 8, 1997Date of Patent: February 16, 1999Assignee: Steag ASTInventors: Guenter Kaltenbrunner, Zsolt Nenyei, Helmut Sommer
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Patent number: 5861609Abstract: A thin visible and near IR absorbing plate is placed between the radiation source and the object to be processed in a rapid thermal processing system. The object is heated in part by the near IR and far IR radiation from the thin plate, and the material and optically induced heating inhomogeneities are reduced.Type: GrantFiled: October 2, 1995Date of Patent: January 19, 1999Inventors: Guenter Kaltenbrunner, Thomas Knarr, Zsolt Nenyei
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Patent number: 5841110Abstract: A method for Rapid Thermal Processing (RTP) is presented, wherein the broadband reflectivity of an object is measured, and the results of the measurement used by the RTP system to adjust the RTP system parameters used in processing the object.Type: GrantFiled: August 27, 1997Date of Patent: November 24, 1998Assignee: Steag-Ast GmbHInventors: Zsolt Nenyei, Heinrich Walk, Michael Maurer, Thomas Knarr
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Patent number: 5837555Abstract: A closable enclosure for rapid thermal processing of semiconductor wafers is presented, wherein the closable enclosure has an enclosed volume less than 10 times the volume of the wafer, and wherein the closable enclosure may closed about the wafer while the closable enclosure is surrounded by the process gas.Type: GrantFiled: April 12, 1996Date of Patent: November 17, 1998Assignee: AST ElectronikInventors: Guenter Kaltenbrunner, Zsolt Nenyei, Helmut Sommer
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Patent number: 5628564Abstract: A method and apparatus for optical pyrometry in a Rapid Thermal Processing (RTP) System, whereby the radiation used to heat the object to be processed in the RTP system is in part specularly reflected from specularly reflecting surfaces and is incident on the object with a particular angular distribution, and the thermal radiation from the object is measured at an angles different from the angle where the incident radiation specularly reflected from the surface of the object is a maximum.Type: GrantFiled: March 28, 1995Date of Patent: May 13, 1997Assignee: AST Elekronik GmbHInventors: Zsolt Nenyei, Andreas Tillmann, Heinrich Walk