Evaluating sidewall coverage in a semiconductor wafer
A sidewall or other feature in a semiconductor wafer is evaluated by illuminating the wafer with at least one beam of electromagnetic radiation, and measuring intensity of a portion of the beam reflected by the wafer. Change in reflectance between measurements provides a measure of a property of the feature. The change may be either a decrease in reflectance or an increase in reflectance, depending on the embodiment. A single beam may be used if it is polarized in a direction substantially perpendicular to a longitudinal direction of the sidewall. A portion of the energy of the beam is absorbed by the sidewall, thereby to cause a decrease in reflectance when compared to reflectance by a flat region. Alternatively, two beams may be used, of which a first beam applies heat to the feature itself or to a region adjacent to the feature, and a second beam is used to measure an increase in reflectance caused by an elevation in temperature due to heat transfer through the feature. The elevation in temperature that is measured can be either of the feature itself, or of a region adjacent to the feature.
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This application is related to and incorporates by reference herein in their entirety the following commonly owned, U.S. Patent Applications:
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- Ser. No. 09/095,804 entitled “AN APPARATUS AND METHOD FOR EVALUATING A WAFER OF SEMICONDUCTOR MATERIAL”, filed Jun. 10, 1998, by Peter G. Borden et al.;
- Ser. No. 09/095,805 entitled “AN APPARATUS AND METHOD FOR MEASURING A PROPERTY OF A LAYER IN A MULTILAYERED STRUCTURE”, filed Jun. 10, 1998 by Peter G. Borden et al.; and
- Ser. No. 09/521,232 [attorney docket number M-7850 US] entitled “EVALUATING A PROPERTY OF A MULTILAYERED STRUCTURE”, filed on Mar. 8, 2000 by Peter G. Borden et al.
Damascene structures in semiconductor substrates are so-named because they consist of metal lines formed in narrow grooves. These grooves may be <0.15 μm wide, and >0.5 μm deep, with a aspect ratios that may exceed 3:1 (ratio of height to width). Such damascene structures are typically formed in a multi-step process, of the type shown in
The yield of this process depends on the thickness t of each sidewall of each groove. This is a parameter called sidewall coverage. If the sidewall coverage is too thin, then the coating may be discontinuous, or even non-existent. It then acts as a poor nucleating surface for the subsequent electrodeposition of subsequent thick layer 106, causing problems such as void formation. These voids act as breaks in the metal line, either preventing current flow, or constricting current flow to the point where the line locally overheats and fails. If the coating is too thick, the top of the groove may close off, preventing adequate circulation of electrodeposition electrolyte, resulting in poor filling of the grooves. This problem is further aggravated as the technology advances, and the grooves become deeper and narrower A prior art method for measuring sidewall coverage uses transmission electron microscopy (TEM) imaging. In TEM imaging, a sample is prepared, either by using a focused ion beam that etches away a portion of the array, or by cleaving a sample and ion milling it to make it sufficiently thin so that it can be penetrated with high-energy electrons to form a TEM image. This is obviously a destructive method, since a portion of the integrated circuit must be physically removed. It is also slow, because adequate removal of material at any site may take many tens of minutes, and additional sample preparation, mounting and alignment may take hours. Thus, TEM imaging is useful for analytic diagnosis, but, being destructive and slow, is unsuitable for process control.
An abstract of a paper entitled “Mining Diagnostic Information from CD-SEM for Photolithography Control” by Haolin Zhang, available over the Internet at http://buffy.eecs.berkeley.edu/IRO/Summary/98abstracts/chapter5.html states that “Top view CD-SEM is a routine inspection tool in today's fabrication line. Even though relatively accurate critical dimensions can be obtained from a CD-SEM, much more information is hidden in the high resolution SEM images. The digitized SEM scan is a signal that may be used to monitor and diagnose the process sequence. We successfully used SEM traces of small test patterns to correctly infer two critical process parameters: focus distance and exposure dose. Principal component analysis (PCA) is applied to extract the characteristic feature behind the digitized SEM image. A feed-forward neural network trained by back propagation has been implemented to classify the different conditions. The sidewall profile of the pattern can also be studied by similar methodology. We plan to find an appropriate algorithm to relate the top view CD-SEM to the sidewall profile and film thickness. We will use an atomic force microscope (AFM) and/or cross-sectional SEM to extract sidewall information in order to calibrate the model.”
The abstract of another paper, entitled “Real Time Monitoring of Grating Structures Using RCWA Modeling and Two-Channel Spectral Reflectometry” by Hsu-Ting Huang et al. available over the Internet at http://www.aps.org/mlet/MAR00/baps/abs/S6480.html states “We have previously demonstrated that specular SE or SR data from grating structures can be accurately analyzed using vector diffraction theory (using the rigorous coupled wave analysis method, RCWA) to extract the topography of surface relief gratings on wafers. In ex situ experiments, we have demonstrated that this method accurately yields critical dimensions, feature heights, and wall angles more complex sidewall shape information from deep sub-micron gratings. We have also reported on a high-speed, low-cost optical system, two channel spectroscopic reflectometry (2CSR), for in situ monitoring. Our current 2CSR system simultaneously measures |R_p|{circumflex over ( )}2 and |R_s|{circumflex over ( )}2 over the 370-850 nm spectral range at minimum sampling time of 6 ms. In this talk, we will show the first demonstrations of in situ, real-time monitoring of feature evolution in a reactive ion etching system (RIE). Using 2CSR and RCWA-based analysis we have successfully extracted the critical dimensions, wall shape, and feature height evolution of a 0.35 μm line/space photoresist grating during an O—2 RIE process. Cross-sectional SEM photos before and after the etch runs will be shown which verify the high accuracy of this method. We will show variations in the topography evolution with changes in the RIE conditions. Measurement sensitivity issues and implications for industrial process control will be discussed.”
SUMMARYIn accordance with the invention, a feature (such as a sidewall of a groove or a via hole, and formed of a reflective material) in a semiconductor wafer is evaluated by illuminating the wafer with at least one beam of electromagnetic radiation, and measuring intensity of a portion of the beam reflected by the wafer. Change in reflectance between measurements provides a measure of a property of the feature. The change may be either a decrease in reflectance or an increase in reflectance, depending on the embodiment.
One embodiment uses a single beam that is polarized in a direction substantially perpendicular to a longitudinal direction of the feature. A portion of the energy of the beam is absorbed by the feature, thereby to cause a decrease in reflectance when compared to reflectance of a flat region. A plot of reflectance as a function of distance across a groove, is symmetric when the two sidewalls have identical properties (such as sidewall thickness), and asymmetric when the sidewall coverage differs.
Instead of using a single beam, some embodiments use two beams that may or may not be polarized, and that may or may not form overlapping spots on the wafer. A first beam (called “heating beam”) applies heat to the feature itself or to a region adjacent to the feature, and a second beam (called “probe beam”) is used to measure an increase in reflectance caused by an elevation in temperature due to heat transfer through the feature. The elevation in temperature that is measured can be either of the feature itself, or of a region adjacent to the feature, depending on the embodiment.
BRIEF DESCRIPTION OF THE DRAWINGS
A method 10 (
A change in intensity of the signal being measured (assuming all parameters (such as intensity of beam 22 incident on wafer 20) are kept constant) provides a measure of a property (such as thickness t) of feature 21A. The change may be either a decrease in reflectance or an increase in reflectance, depending on the embodiment. Therefore, a property of feature 21A is measured by beam 22 in accordance with the invention (by monitoring a change in reflectance) even though beam 22 forms on wafer 20 a spot of diameter D (e.g. 2 μm or 20,000 Å) that is one or more orders of magnitude larger than the thickness t (e.g. 50 Å) of feature 21A. The measurements can be displayed to an operator, e.g. in a graph as illustrated by act 14 in
Feature 21A may be, for example, a sidewall of a groove 21 that has another sidewall 21B separated therefrom by a floor 21C (
In one exemplary wafer 20, sidewalls 21A and 21B are formed by a conductive layer 28 (
Measurements of the type described herein provide at least two advantages over prior art methods: (1) the properties of a line of width much smaller than the beam diameter can be measured, and (2) the measurement indicates not only the sidewall coverage but relative coverage of the two walls.
In one embodiment (also called “single beam embodiment”), a feature 21A which is part of groove 21 is illuminated by a beam 22 which is polarized in a direction P. In one implementation of this embodiment, direction P forms an angle θ with a longitudinal direction of feature 21A. For beam 22 to be reflected by groove 21, an electric field must be established in floor 21C that matches the incident electric field. This induced field re-radiates, resulting in a reflected portion of beam 22. When the incident electric field is parallel to groove 21, this occurs, and groove 21 acts like the rest of layer 28, reflecting all of the incident power other than a negligible fraction (e.g. less than 10%) that may be lost at the sidewalls 21A and 21B. Hence, the component of beam 22 that is polarized parallel to groove 21 is reflected. However, when the incident electric field is perpendicular to groove 21, and when groove width W is smaller than the wavelength of beam 22, and groove 21 is too narrow to set up a matching electric field. As a result, the reflection is very small and the component of beam 22 polarized perpendicular to groove 21 transmits as heat into substrate 30, as if groove 21 did not exist.
For this reason, beam 22's polarization direction P is deliberately selected to be not parallel to feature 21A. In the example illustrated in
In one implementation of the single beam embodiment, measurements (of a reflected portion of beam 22) are repeatedly made during a scan (also called “transverse scan”) across feature 21A, in a direction 23 that is perpendicular to the longitudinal direction of feature 21. The measurements, when plotted as a function of distance yield a curve (called “reflectance curve”) which indicates properties across the cross-section of the feature. For example, a reflectance curve 31 (
In this example, another reflectance curve 32 (
The measurements plotted in
Depending on the process used to form wafer 20, sidewalls 21A and 21B of groove 21 are not symmetric in all locations of wafer 20. Specifically, reflection curves in
The reason for the difference in symmetry between the reflection curves of
Not all metal depositions show such asymmetry, because different metals are deposited under different conditions.
Therefore, in one example, reflectance curves of two sidewalls located opposite to one another in a groove are compared to one another, either visually by an operator, or automatically (e.g. by comparison of slopes and/or distance of minimum from center and/or presence of knee) to identify symmetry/asymmetry. Depending on the embodiment, a measure of a sidewall's property can be extracted from a reflectance curve, e.g. the slope of the reflectance curve may be compared to slopes of such curves of wafers having properties determined by a prior art process (such as TEM), to determine sidewall thickness. Computation of slope (or other coefficient of a function fitted to the reflectance curve) is useful in process control, e.g. a process parameter used in formation of the feature on the wafer may be changed, when a limit (on the slope or other coefficient) is crossed.
Determining sidewall coverage as described above using a single probe beam 22 by generating a reflectance curve is feasible during process control because the process is non-destructive and non-contacting, and is sufficiently rapid to provide a high throughput of wafers (e.g. each measurement takes about 5 seconds per site, or for each point in a line scan). In addition, the area required for measurement of a reflectance curve is small—no larger than a few microns—which allows use directly in patterns where only a small number of lines (e.g. one line) are available for measurement, and enables resolution of fine-scale process non-uniformity, and monitoring of localized defects in a sidewall.
A change in reflectance over a feature also provides a measure of a property of the feature in the longitudinal direction, e.g. when scanning along the feature (also called “longitudinal scan”). Therefore, reflectance measurements of the single beam embodiment as described above can also be made in a longitudinal scan, e.g. to monitor uniformity in properties of a sidewall or a trace, along its length. A change in reflectance measurement during the longitudinal scan indicates a change in a property (such as thickness) of the sidewall. Regardless of the scan direction, the beam is polarized in a direction other than parallel to a longitudinal direction of the feature, so that at least a portion of the energy of the beam is absorbed by the feature, thereby to reduce reflectance over the feature.
Although an embodiment using a single beam 22 has been described above in reference to
In one embodiment that uses two beams, wafer 20 is illuminated with two beams 57 and 22 (
Intensity of probe beam 22 reflected by wafer 20 is measured, with the spots on the same side of a feature to be evaluated (see act 53 in
Typical dimensions are a spot separation distance of d=4 μm, a groove depth of H=0.5 μm, a groove width of W=0.2 μm, a field layer thickness of T=1000 Å, a sidewall thickness of t=200 Å, and a floor thickness of f=400 Å (see
-
- where TT, TB, and Tw are the thickness of the conductive material on the top, bottom and sidewalls, d is the separation between the spots, W is the groove width, and H is the height of the sidewalls. Note that d>>W and both H>W and TB>Tw, so the middle term is small compared to the first and last terms (the top and sidewall terms). The top and sidewall terms are comparable. However, the beam separation d is fixed and known and the top thickness TT can be determined independently by placing both spots on the top film without the intervening groove (in which case the R, and, hence, the heat rise under the probe beam 22, is now given by the first term since (d−W)˜=d for d>>W). Therefore, the sensitivity of R to sidewall thickness Tw can be found assuming a constant groove depth H.
In one implementation, the intensity of heating beam 57 (
Measurement Sf is proportional to the temperature under probe beam 22. When the spots are formed on the same side of a groove, measurement Sf is converted using a calibration table obtained from independent measurement (under the same conditions) on layers (also called “films”) of known thickness, thereby to determine the thickness T of layer 28. Therefore, a graph (not shown) may be used to look up thickness T (alternatively measurements used to form such a graph may be used directly by a computer to determine thickness T, e.g. by interpolation). Instead of using graphs and/or measurements, the above-described first term can also be used to determine thickness T.
Next, while keeping the distance d between beams 57 and 22 fixed, the two beams are moved relative to wafer 20, to place the spots on a site where a groove passes between the two spots, and the reflected portion of beam 22 is measured, thereby to yield measurement Sg Thereafter, a ratio of the previous measurement Sf to the current measurement Sg is used to look up the sidewall thickness, e.g. from a graph (which is obtained from independent measurement (under the same conditions) on grooves of known sidewall thickness). As before, alternatively the above relation (or a similar but more exact solution), with estimates of the groove height H, width W, and bottom thickness TB may be used to extract the sidewall thickness t.
The measurement may be used to determine the sidewall thickness for a given groove dimension (width, depth) by correlating the measured ratio to a separate measurement of sidewall thickness obtained with any method well known in the art.
Alternately, this measurement may be used for process control. Consider the two samples labeled 1kA Cu and new 1kA Cu. These have the same nominal films, but the films differ due to process variation. A lower ratio indicates a thinner sidewall thickness. In the case shown here, a lower control limit of ratio=0.15 can be set and an upper limit of 0.25. Films measured in this ratio range are accepted; films outside this range are rejected.
Note that embodiments described above may be used in combination as follows. One embodiment measures the average sidewall thickness and another embodiment measures the asymmetry, showing the relative coverage of the two walls. The combination indicates that the average thickness is within the proper range. The asymmetry measurement indicates that the average thickness is not in the acceptable range because the coating is too thick on one wall and too thin on the other. The asymmetry is correlated empirically, by measuring the slope 32R and 32L. Acceptable values are set based on measurements using TEM or SEM, or other prior art methods.
Another embodiment evaluates a wafer 20 having an array of metal lines 200, with the lines labeled 201a-h. Although the word “metal” is used, it is to be understood that lines 200 can be formed of any conductive material.
When illuminated by a beam 202i, array 200 transmits a portion 202t and reflects another portion 202r, wherein the portions being reflected and transmitted depend on the respective polarization directions, as discussed above. Specifically, array 200 behaves in a manner similar or identical to a wire grid polarizer as described in the above-referenced U.S. patent application Ser. No. 09/521,232 and in Handbook of Optics at pages 10-72 to 10-77, which pages are incorporated by reference herein in their entirety. However, unlike the conventional use of wire grid polarizer to polarize radio waves and far-infrared radiation, this embodiment uses array 200 to polarize near-infrared or visible light of either or both of beams 57 and 22.
In accordance with the invention, the principle of wire grid polarizer can be extended to grooves that are completely coated with a conductor such as a metal, such as structure 210 illustrated in
Under the above-described conditions, transmission properties of structure 210 are similar to those observed with array 200, wherein lines 201a-201f are independent of one another, as shown in
Note that there is no significant change (e.g. less than 20%) in reflection during the scan when using parallel polarization (
As illustrated by
Therefore, a measurement of sidewall thickness t is made in one implementation in the following manner:
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- 1. Light polarized perpendicular to the grooves is shone onto the corrugated structure 210, becomes absorbed and converted to heat; this heats the structure to a temperature inversely proportional to the sidewall thickness.
- 2. A second laser polarized parallel to the grooves is shone on the structure 210; due to its polarization, it only reflects from the tops of the grooves; alternatively second laser is polarized perpendicular to the grooves, and is reflected by the sidewalls.
- 3. The reflectance is a function of temperature, so the reflection of the second laser is a measure of sidewall coverage.
Specifically, laser beam 211 (
With respect to the absorption of light in the grooves, the typical case, in fact, is a cross between the two structures 200 and 210 shown in
The temperature profile 214 (
Heat also flows along the length of the grooves and tops (i.e in the longitudinal direction, which is perpendicular to the plane of the paper in
The peak temperature is measured using a second laser beam 212, which forms a probe beam of this embodiment. Laser beam 212 is polarized either parallel or perpendicular to the grooves, depending on the implementation. When polarized parallel, laser beam 212 only reflects from the tops, thereby making its reflection independent of the groove properties. The reflectance of any metal is a function of temperature, so the reflection of parallel polarized beam 212 is a measure of the temperature profile of the tops, which in turn is governed by the sidewall thickness. Hence the measurements provide an indication of sidewall thickness.
In an alternative embodiment, laser beam 211 is polarized perpendicular to the grooves, and is therefore reflected by sidewalls and groove floors of array 210. As the sidewalls and floors are heated, the reflected portion of such a perpendicular polarized beam 211 also provides a measure of the temperature profile, and, hence, sidewall thickness. The measurement using perpendicular polarized beam 211 is more accurate and more sensitive than a corresponding measurement using parallel polarized beam 211. The graph in
Second laser 605 is a semiconductor diode laser with a wavelength of 980 nm (Spectra Diode Laboratories model 6700). It is coupled to the system using optical fiber 606, and the beam is collimated using lens 607, providing a 4 mm diameter circularly polarized beam 609. Beam 609 is linearly polarized using quarter-wave plate 625. Beams 609 and 603 are combined using dichroic mirror 610, forming single combined beam 611. Beam 611 passes through beam splitter 612, whose purpose is to send the return beam to the detector. A portion of beam 611 is detected using photocell 613, which may be used to ensure proper calibration of the power of beam 611. Beam 611 then passes through beam splitter 614 and focusing lens 615, which is a 100× lens (Olympus, Tokyo Japan), focusing the combined beam on the wafer 616.
The reflected light is re-collimated with lens 615. 90:10 beam splitter 614 diverts the return beam 611 to an autofocus and imaging system consisting of lens 617 and camera 618 (an additional beam splitter, pinhole and detector for the autofocus are not shown). Lens 617 and camera 618 enables viewing of the sample to place the focus spot at the correct location. The autofocus system allows the focus spot of the laser beams to be maintained at the surface of the wafer 616. Half of the power in beam 611 is then sent to optical narrow-band filter 619, which passes the light from laser 605 (980 nm) but blocks the light from laser 601 (830 nm). The transmitted light passes to photodetector 620, amplifier 624, and lock-in amplifier 622. The signal from lock-in amplifier 622 is then sent to a computer for analysis.
Lock-in amplifier 622 has a oscillator that serves as a reference signal for synchronous detection of the output of photocell 620 and amplifier 624. This oscillator is used as an input to laser driver 621, which provides a modulated drive for laser 601. The modulation frequency is preferably <2 KHz. This is to avoid creation of thermal waves. Such waves are generated at higher modulation frequencies. Because of the uneven (corrugated) geometry of structure 210, any waves will cause reflections that will confuse the measurement, and must therefore be rigorously avoided.
Filter 19 is on an actuator so that it may be removed to enable use of laser 601 for single beam measurement. In this case, laser 605 is turned off, e.g. by closing a shutter.
The heat flow obeys the diffusion equation, which in its simplest form (one-dimension) is
-
- where T is the temperature rise above ambient, Q is the heat input per unit volume, K is the thermal conductivity, and α is the thermal diffusivity. Under sinusoidal excitation, the temperature is written as T(z,t)=T(z)ejωt where ω=2πf and f is the excitation frequency. In the region outside the heating spot, Q=0, and equation (1) is written as
- which has a solution of the form
which is a decaying wave with a wavelength
- where T is the temperature rise above ambient, Q is the heat input per unit volume, K is the thermal conductivity, and α is the thermal diffusivity. Under sinusoidal excitation, the temperature is written as T(z,t)=T(z)ejωt where ω=2πf and f is the excitation frequency. In the region outside the heating spot, Q=0, and equation (1) is written as
The criterion for a “steady-state” measurement—that is, a measurement without the presence of an unwanted wave component—is λ>>L, where L is the length of the structure that is being measured, or, alternately, the length over which the temperature profile decays because of heat loss mechanisms such as diffusion into the insulator underneath the metal film. This sets up a relationship for the modulation frequency of
If the measurement is within limits, the wafer is returned to the process flow for the next step, eventually being completed as wafer 505. If not, the programmed computer sends, using connection 515, a signal to the etching and liner deposition machines to make predetermined adjustments. Numerous modifications and adaptations of the above-described embodiments, implementations, and examples will become apparent to a person skilled in the art of using lasers to measure properties of semiconductor wafers. For example, in an alternative embodiment, instead of using a laser to generate a heating beam, another heat source (such as an electron gun and electron focusing column that forms an electron beam) is used to modulate the temperature T. Also, a probe beam used to measure the sidewall thickness as described herein can consist of x-rays.
For example, although in the embodiment illustrated in
In another example, a sidewall thickness measurement is made using two lasers, both polarized perpendicular to a groove, and following the sidewall thickness measurement, one laser is turned off and the wafer is scanned under the remaining laser beam. The symmetry of the scan is then observed to verify that the sidewall coating is even (i.e. has the same thickness) on both sides of the groove. In yet another example, one beam is not turned off and instead the two beams are scanned along the longitudinal direction of the feature, thereby to provide a linear scan in terms of the sidewall thickness.
Moreover, structures other than semiconductor wafers (e.g., photomasks that include a glass substrate and are used to form the wafers, or an active matrix liquid crystal display) can also be evaluated as described herein.
Furthermore, instead of scanning as described herein, another embodiment performs hopping. Specifically, this embodiment involves a stepwise movement (“hopping”) from one region to another region of the wafer when performing measurements of the type described herein (as opposed to scanning that continuously moves (“sweeps”) the beam of electromagnetic radiation relative to the wafer. In the hopping process, the stage holds the wafer stationary for a moment (e.g., 1 second) while a measurement is taken in one region, and then moves to another region (e.g., of the same wafer).
Two regions in which measurements are made can be separated from each other, e.g., by distance which is same as the diameter of the beam. Alternatively, the two regions can touch each other or even overlap each other. When overlapping one another, the centers of the two regions may be separated by a small fraction of the diameter, e.g., by ({fraction (1/10)}) D or less. Regardless of how close the regions are, the hopping process yields discrete values (one for each region) as compared to the sweeping process which yields a continuous signal. As described elsewhere herein, the regions can be physically located on different features (e.g. on the two sidewalls of a groove), so that an alternative embodiment involves hopping from feature to feature (when hopping among features). A combination of the just-described two types of hopping can also be used (i.e., moving between regions of the same feature and also moving between features).
Note that the just-described “hopping” can be performed from one region to a next region that touch each other, and a measurement from each region can be plotted in a graph, e.g., to indicate a profile of sidewall thickness across the regions. In another embodiment, hopping is performed between regions that overlap one another thereby to provide a more realistic measure of the average profile across these regions, as compared to non-overlapping regions.
Numerous modifications and adaptations of the above-described embodiments, implementations, and examples are encompassed by the attached claims.
Claims
1. A method of evaluating a feature in a semiconductor wafer, the method comprising:
- illuminating the wafer with a beam of electromagnetic radiation having a majority of energy polarized in a direction other than parallel to a longitudinal direction of the feature; and
- measuring intensity of a portion of the beam reflected by the wafer.
2. The method of claim 1 wherein:
- the feature includes a sidewall of a groove; and
- the act of measuring is performed repeatedly at a plurality of locations transverse to the longitudinal direction of the groove.
3. The method of claim 2 wherein:
- the beam has a wavelength greater than thickness of the sidewall.
4. The method of claim 1 wherein:
- the beam has a wavelength greater than a dimension of the feature; and
- the beam forms on the wafer a spot of a diameter greater than the dimension.
5. The method of claim 1 wherein:
- the feature includes a trace of reflective material.
6. The method of claim 1 wherein:
- the wafer includes a layer located between a source of the beam and the feature; and
- the layer is at least partially transmissive, so that the portion passes through the layer.
7. The method of claim 1 wherein:
- the beam has a majority of energy polarized in a direction at least substantially perpendicular to the longitudinal direction.
8. The method of claim 1 wherein:
- the beam has a predetermined wavelength; and
- the method further comprises filtering light of a wavelength other than the predetermined wavelength.
9. The method of claim 1 wherein the wafer has a plurality of features including the feature, and the method further comprises:
- performing the act of measuring for each feature of the plurality; and
- comparing measurements of multiple features.
10. The method of claim 9 wherein:
- each feature is a sidewall; and
- the act of comparing includes comparing measurements of two sidewalls located opposite to one another in a groove.
11. The method of claim 1 wherein the beam is a first beam, and the method further comprises:
- illuminating the wafer with a second beam of electromagnetic radiation.
12. The method of claim 11 wherein:
- the first beam forms a first spot on the wafer, the second beam forms a second spot;
- the act of measuring includes measuring with the first spot and the second spots located on opposite sides of the feature; and
- the method further comprises measuring with the first spot and the second spots located on the same side of the feature.
13. The method of claim 11 wherein:
- the second spot at least partially overlaps the first spot.
14. The method of claim 13 wherein:
- the first beam has a first wavelength different from a second wavelength of the second beam;
- the second beam is modulated at a predetermined frequency; and
- the act of measuring includes measuring intensity of the second beam having the second wavelength and modulated at the predetermined frequency.
15. The method of claim 13 wherein:
- the first beam is polarized substantially perpendicular to the longitudinal direction.
16. A method of evaluating wafers during fabrication, the method comprising:
- forming a feature of conductive material in a wafer by using at least one process parameter;
- illuminating the wafer with a beam of electromagnetic radiation having a majority of energy polarized in a direction other than parallel to a longitudinal direction of the feature; and
- repeatedly measuring intensity of a portion of the beam reflected by the wafer at a plurality of locations transverse to the longitudinal direction; and
- changing the process parameter depending on measurements obtained from the act of repeatedly measuring.
17. The method of claim 16 further comprising:
- determining a coefficient of a function that fits the measurements;
- comparing the coefficient against a predetermined limit and performing the changing based on an outcome of the comparing.
18. A method of evaluating a feature in a semiconductor wafer, the method comprising:
- illuminating the wafer with two beams, each beam forming a spot; and
- performing a measurement with the first spot and the second spots located on opposite sides of the feature.
19. The method of claim 18 wherein:
- each of the two beams includes unpolarized light.
20. The method of claim 18 wherein:
- each of the two beams includes light polarized in a direction other than parallel to a longitudinal direction of the feature.
21. The method of claim 18 wherein:
- the method further includes modulating intensity of a first beam at a predetermined frequency, said predetermined frequency being sufficiently small to avoid creation of a wave; and
- the act of performing includes measuring intensity of a portion of the second beam reflected by the wafer, the portion being modulated at the predetermined frequency.
22. The method of claim 18 further comprising:
- performing a second measurement with the first spot and the second spots located on the same side of the feature.
23. A method of evaluating a feature in a semiconductor wafer, the method comprising:
- illuminating the wafer with two beams, a first beam having a first intensity larger than a second intensity of a second beam, the first beam having a majority of energy polarized in a direction other than parallel to a longitudinal direction of the feature; and
- measuring intensity of a portion of the second beam reflected by the wafer
24. The method of claim 22 wherein:
- the method further includes modulating intensity of the first beam at a predetermined frequency, said predetermined frequency being sufficiently small to avoid creation of a wave; and
- the act of measuring includes measuring intensity of a portion of the second beam reflected by the wafer, the portion being modulated at the predetermined frequency.
25. The method of claim 22 wherein:
- each of the two beams is a laser beam.
26. The method of claim 22 wherein:
- the first beam is an electron beam; and
- the second beam is a laser beam.
27. The method of claim 22 wherein:
- the first beam forms a first spot; and
- the second beam forms a second spot that at least partially overlaps the first spot.
28. The method of claim 22 further comprising:
- forming the feature by using at least one process parameter; and
- changing the process parameter depending on measurements obtained from the act of measuring.
29. An apparatus for evaluating a feature in a wafer, the apparatus comprising:
- a laser source for generating a beam polarized in a direction other than parallel to a longitudinal direction of the feature; and
- a photosensitive element located in a path of radiation of electromagnetic energy from the wafer.
30. The apparatus of claim 29 further comprising:
- a circuit coupled to the laser to move the beam along a line across the feature; and
- a monitor for displaying a graph of a signal generated by the photosensitive element as a function of distance along the line.
31. The apparatus of claim 30 wherein:
- the line is at least substantially perpendicular to the longitudinal direction of the feature.
32. The apparatus of claim 29 further comprising:
- an oscillator capable of oscillating at a frequency lower than 25000 Hz, the oscillator being coupled to the laser source; and
- a lock-in amplifier coupled to said oscillator and to said photosensitive element.
33. The apparatus of claim 32 wherein during operation:
- said oscillator causes said laser source to generate said beam at an intensity modulated at said frequency; and
- said lock-in amplifier generates a signal indicative of reflectivity of said wafer.
34. The apparatus of claim 29 further comprising:
- a computer coupled to the photosensitive element and programmed to determine a dimension of the feature.
35. The apparatus of claim 34 further comprising:
- a memory having encoded therein values generated from at least one test wafer having a feature of a known property;
- wherein the computer is programmed to use a signal generated by the photosensitive element to look up a value of property for the wafer, based on the values in memory.
36. An apparatus comprising:
- means for illuminating a semiconductor wafer with a beam of electromagnetic radiation having a majority of energy polarized in a direction other than parallel to a longitudinal direction of the feature; and
- means for measuring intensity of a portion of the beam reflected by the wafer, the means for measuring being coupled to the means for illuminating.
37. The apparatus of claim 36 further comprising:
- means for displaying measurements generated by the means for measuring, as a function of distance.
Type: Application
Filed: Nov 22, 2004
Publication Date: May 12, 2005
Applicant:
Inventors: Jiping Li (Fremont, CA), Peter Borden (San Mateo, CA)
Application Number: 10/996,194