Decoupling capacitor design
A thin-dielectric unit capacitor is disclosed having a first node coupled to a first circuit connection point and a second node coupled to a second circuit connection point. It further contains a first and second thin-dielectric capacitors connected in series between the first and second nodes, wherein a thickness of a gate dielectric for each thin-dielectric capacitor is less than 50 angstroms.
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The present invention claims the benefit under 35 U.S.C. §119(e) of U.S. provisional application No. 60/565,203 filed Apr. 23, 2004.
BACKGROUNDThe present invention relates generally to capacitors for integrated circuits, and more particularly to stacking thin-dielectric decoupling capacitors for integrated circuits showing high unit capacitance.
In a normal configuration of semiconductor chips, power lines and ground lines are routed to logic gates in integrated circuits. The current from power supply flows through power lines, logic gates, and finally to ground. During the switching of the logic gates, a large amount of changes in the current occurs within a short period of time. Decoupling capacitors are used to absorb these glitches during current switching and to maintain a constant voltage between supply voltage and ground. Good decoupling capacitors should show high capacitance per unit area, low leakage current and short time constant. There are three kinds of conventional decoupling capacitors commonly used in integrated circuits, namely inter-digital fringing metal or poly capacitors, area Metal-Isolator-Metal (MiM) capacitors, area Poly-Isolator-Poly (PIP) capacitors and thin-dielectric capacitors.
Desirable in the art is an improved capacitor design that would improve upon the conventional thin-dielectric capacitor design.
SUMMARYIn view of the foregoing, this invention provides a novel thin-dielectric capacitor design by stacking multiple thin-dielectric capacitors to achieve high gate oxide integrity while providing high unit capacitance, low gate leakage current and adjustable time constant.
In one embodiment, a thin-dielectric unit capacitor is disclosed having a first node coupled to a first circuit connection point and a second node coupled to a second circuit connection point. It further contains a first and second thin-dielectric capacitors connected in series between the first and second nodes, wherein a thickness of a gate dielectric for each thin-dielectric capacitor is less than 50 angstroms.
The construction and method of operation of the invention, however, together with additional objects and advantages thereof will be best understood from the following description of specific embodiments when read in connection with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 5(a) and (b) illustrate simplified schematics showing decoupling capacitors using both NMOS and PMOS devices according to one embodiment of the present invention.
DESCRIPTIONThis invention will provide a detailed description of the art of stacking thin-dielectric capacitors for circuits using advanced technologies. The stacking thin-dielectric capacitor can achieve high gate oxide integrity, low leakage while providing high unit capacitance. The response time can be set to different values by adjusting poly width of the thin-dielectric capacitor. Each unit capacitor as disclosed may comprise at least two physical thin-dielectric capacitors coupled in series. The present invention is useful for high density integrated circuit applications where the thickness of capacitor gate dielectric layer is less than 50 Å in thickness and the minimum gate width for an active transistor on the same chip with the capacitors is 0.18 μm or less.
As discussed in
Because the gate dielectric leakage current in ultra-thin oxide semiconductors is very sensitive to electrical stress, the leakage current significantly decreases as the stress voltage decreases. In this specific embodiment, because both capacitors have the same capacitance, the stress voltage is equally distributed on two capacitors. When the voltage on each gate is reduced to ½ of its normal value, the leakage current consequently drops to about 1/10 of its original value accordingly. In addition, with this specific embodiment of NMOS capacitors formed inside N-wells, it is easier to dissipate ESD charges, thereby reducing the chance of ESD damage to the unit capacitor.
Within this invention, each unit capacitor comprises at least two serial physical capacitors. The above disclosed design is particularly useful and advantageous when advanced technologies have shrunk the transistor gate size below 0.18 μm. When circuits are designed with these small transistors, the capacitors used for decoupling, delay, or bootstrapping purposes are preferred to have the thickness of the thin dielectric layer to be less than 50 Å while the minimum gate width of an active transistor on the same chip is less than 0.18 μm.
Note that the embodiment of the thin-dielectric capacitor above is the NMOS capacitors inside N-wells such the NMOS devices are always operated in accumulation region. As such, the time constant of the capacitor is determined by the response time of the majority carriers, rather than the minority carriers in the NMOS on P-substrate structures. However, it is understood that other types of capacitors such as devices operated in strong inversion can also be used. Same or different type of dopant for capacitor source/drain vs. bulk (N+ over N-well in P-substrate, P+ over P-substrate, N+ over P-substrate, P+ over N-well in P-substrate, NMOS, PMOS) may be used. The same can be applied to N-type substrate. As long as the capacitors are used in a stack fashion, they don't even have to be 4-terminal MOS transistors. FIGS. 5(a) and 5(b) show cross section and schematic views of an embodiment using both PMOS and NMOS connected as capacitors for the decoupling purposes.
Such stacked thin-dielectric capacitor art may be widely used for various purposes such as in Vdd/Vss decoupling, RC-delay circuits, bootstrap design applications, etc. This invention may be employed for designs comprising gate array or standard cell or device arrays. When placing the capacitors in the circuit, they can be in groups for a circuit, or for segments of the circuit.
This improved capacitor design may be widely used in IC designs with four to eight conductor layers. One or more decoupling capacitors may be formed under one of power or ground buses in such IC design for at least one array or row of cells or devices formed in a horizontal or vertical direction or on one side of chip edges. This capacitor design can apply to standard cell design, gate array, fully custom or IP Library product applications. Further, the disclosed capacitor design can be stacked physical capacitors as well as MOS capacitors.
The described invention provides many different embodiments or embodiments for implementing different features of the invention. Specific embodiments of components and processes are described to help clarify the invention. These are, of course, merely embodiments and are not intended to limit the invention from that described in the claims.
Although the invention is illustrated and described herein as embodied in a capacitor design, it is nevertheless not intended to be limited to the details shown, since various modifications and structural changes may be made therein without departing from the spirit of the invention and within the scope and range of equivalents of the claims. Accordingly, it is appropriate that the appended claims be construed broadly and in a manner consistent with the scope of the invention, as set forth in the following claims.
Claims
1. A thin-dielectric unit capacitor comprising:
- a first node coupled to a first circuit connection point;
- a second node coupled to a second circuit connection point; and
- a first and second thin-dielectric capacitors connected in series between the first and second nodes,
- wherein a thickness of a gate dielectric for at least one thin-dielectric capacitor is less than 50 angstroms.
2. The capacitor of claim 1 wherein the first node is coupled to a first voltage level and the second node is coupled to a second voltage level which is less than the first voltage level.
3. The capacitor of claim 2 wherein a resistance device is coupled between the first node or the second node and the first or second voltage level respectively.
4. The capacitor of claim 1 wherein the first voltage level is a positive power supply.
5. The capacitor of claim 1 wherein the second voltage level is ground.
6. The capacitor of claim 1 wherein a gate width of an active transistor operating with the capacitor on a same chip is less than 0.18 um.
7. The capacitor of claim 1 wherein a capacitance of each capacitor is adjustable by adjusting a width or length of a gate material.
8. The capacitor of claim 1 wherein the capacitor is arranged for decoupling between two voltage points.
9. The capacitor of claim 1 wherein the capacitor is configured for providing a predetermined time constant.
10. The capacitor of claim 1 wherein the capacitor is a bootstrapping capacitor.
11. A circuit incorporated with at least one decoupling thin-dielectric unit capacitor, the circuit comprising:
- one or more circuit modules;
- one or more decoupling modules coupled to the circuit modules, wherein each decoupling module having one or more unit capacitors each comprising: a first node coupled to a first circuit connection point of the circuit module; a second node coupled to a second circuit connection point of the circuit module; and two or more thin-dielectric capacitors connected in series between the first and second nodes,
- wherein a thickness of a gate dielectric for at least one thin-dielectric capacitor is less than 50 angstroms.
12. The circuit of claim 11 wherein the first node is coupled to a first power level and the second node to a second power level.
13. The circuit of claim 12 wherein the first power level is a positive power supply level.
14. The circuit of claim 12 wherein the second power level is ground.
15. The circuit of claim 11 wherein the capacitor is coupled to either the first or second power level through a resistor device.
16. The circuit of claim 11 wherein a capacitance of each capacitor in the unit capacitor is adjustable by adjusting a width or length of a gate material.
17. The circuit of claim 11 wherein the decoupling module is arranged between any two circuit modules.
18. The circuit of claim 17 wherein the decoupling modules are placed with a predetermined distance interval between them, the distance interval being larger than 50 micron.
19. The circuit of claim 11 wherein the decoupling module has one or more unit capacitors arranged in parallel for providing a decoupling function for one or more circuit modules.
20. The circuit of claim 11 wherein the circuit is manufactured by a process having at least four conducting layers.
21. The circuit of claim 20 wherein the circuit is manufactured by a process having eight or fewer conducing layers.
22. A circuit incorporated with at least one decoupling thin-dielectric unit capacitor formed under one of a power supply buses, the circuit comprising:
- one or more circuit modules;
- one or more decoupling modules coupled to the circuit modules, wherein each decoupling module having one or more unit capacitors each comprising: a first node coupled to a first voltage supply; a second node coupled to a second voltage supply that is at a level lower than the first voltage supply; and two or more thin-dielectric capacitors connected in series between the first and second nodes,
- wherein a thickness of a gate dielectric for each thin-dielectric capacitor is less than 50 angstroms,
- wherein the circuit has four to eight conducting layers after being manufactured, and
- wherein a gate width of an active transistor on the circuit is less than 0.18 micron.
23. The circuit of claim 22 wherein the decoupling module is arranged between any two circuit modules.
24. The circuit of claim 22 wherein the decoupling modules are placed with a predetermined distance interval between them, the distance interval being larger than 50 micron.
25. The circuit of claim 22 wherein the thickness of the gate dielectric for at least one thin-dielectric capacitor is less than 30 angstroms.
Type: Application
Filed: Nov 19, 2004
Publication Date: Oct 27, 2005
Patent Grant number: 7301217
Applicant:
Inventor: Shine Chung (San Jose, CA)
Application Number: 10/993,711