MAGNETRON SPUTTERING TARGET
A magnetron sputtering target, which can improve utilization rate and service life of target materials and can be used in a magnetron sputtering technology, is provided. The magnetron sputtering target comprises a target material, a target back plate, an insulating pad, a target cathode frame, one or more leading pole piece adjustment pads, and one or more juxtaposed magnets, which are stacked in order. The leading pole piece adjustment pad is disposed between the insulating pad and the magnet.
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The present invention relates to a magnetron sputtering target.
BACKGROUND OF THE INVENTIONA magnetron sputtering technology has been widely used in many fields, such as surface decoration of materials, surface modification of materials, and manufacturing of optical devices and electronic devices. Magnetron sputtering targets can be divided into classes of a plain magnetron sputtering target and a column magnetron sputtering target by structure, and can also be divided into classes of a balancing target and a non-balancing target by distribution of the magnetic field. Material used in a plain magnetron sputtering target is advantageous because of simple processing and convenient installation, and therefore can be used for mass production of products to be coated. Generally, the sputtering target material, such as titanium (Ti), silver (Ag) and platinum (Pt), is expensive, which increases the manufacturing cost.
The conventional process of the magnetron sputtering for coating is shown in
However, the uniformity of the plasma on the surface of the cathode will be affected by an end effect at the turning of the orbit of the electrons in the plasma. At two ends of the orbit of the electrons in the plasma, plasma is intensive, sputtering effect is good, and more sputtering target materials are etched. While in the middle portion of the sputtering target material, less target material is etched, producing a phenomenon that etching in the middle portion of the target material and that in the ends of the target material are not uniform, thus shortening the service life of the target. The profile of the etched target is shown in
An object of the present invention is to provide a magnetron sputtering target solving the problems of the uniformity of etching, low utilization rate of target materials and short service life of the sputtering target materials in the conventional magnetron sputtering technology.
In order to achieve the above objects, an embodiment of the present invention provides a plain magnetron sputtering target, comprising a target material, a target back plate, an insulating pad, a target cathode frame, one or more leading pole piece adjustment pads, and one or more juxtaposed magnets, which are stacked in order. The leading pole piece adjustment pad is disposed between the insulating pad and the magnet.
Preferably, the leading pole piece adjustment pads may be disposed between the insulating pad and the magnet, between the insulating pad and the target cathode frame, or at the both positions.
Preferably, when the leading pole piece adjustment pad is disposed between the target cathode frame and the magnet, the leading pole piece adjustment pad may be fixed on the upper surface of the magnet, or on the surface of the target cathode frame opposite to the magnet, or leading pole piece adjustment pads are disposed on the above two surfaces, and they can be disposed opposite to each other or at least partially overlap with each other.
Preferably, when the leading pole piece adjustment pad is disposed between the insulating pad and the target cathode frame, the leading pole piece adjustment pad may be fixed on the target cathode frame, or on the insulating pad, or leading pole piece adjustment pads are disposed on the two surfaces.
The embodiments of the present invention reduces the etching rate difference between the ends and the middle portion of the target materials by adjusting the uniformity of the magnetic field of the magnetron sputtering target and adjusting the uniformity of the plasma on the surface of the ends of the target materials, thereby shortening the etching difference between the ends and the middle portion of the target material and prolonging the service life of the target materials. The magnetron sputtering target further can be used in a multi-target magnetron sputtering machine for manufacturing a thin film transistor liquid crystal display (TFT-LCD).
Further scope of applicability of the present invention will become apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to those skilled in the art from the following detailed description.
The present invention will become more fully understood from the detailed description given hereinafter and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present invention and wherein:
The following is a detailed description of the technical solution of the present invention in conjunction with the accompanying drawings, which are given in a illustrative purpose but not in a limitative purpose.
First EmbodimentAs shown in
The leading pole piece adjustment pads 11 are made of a metal material that is magnet conductor. Such leading pole piece adjustment pads 11 can be used to make the magnetic lines short and reduce the intensity of the magnetic lines going out of the surface of the target material. The pads 11 can be, for example, in a shape of a rectangle, a circle, a regular or irregular polygon, etc. in a plan view and may be a sheet in construction.
Second EmbodimentAs shown in
As shown in
In the above embodiments, the leading pole piece adjustment pads are disposed in one position, and it has been found by experiment that the effect of the leading magnetic piece adjustment pads can adjust the magnetic field generated by the magnet 10. In the present embodiment, as shown in
On the basis of embodiment 4, leading pole piece adjustment pads 11 are further added between the insulating pad 7 and the target cathode frame 8 in the present embodiment. As shown in
By adopting the device according to the above embodiments of the present invention, in the frame structure of the magnetron sputtering target, the uniformity of the magnetic field generated by the magnets 10 is changed and the sputtering rate of the target material 5 is controlled by disposing the leading pole piece adjustment pads 11 on the plain magnetron sputtering target, such that the target material 5 is etched uniformly, and the utilization rate of the target material is improved.
With experiments, the profile of the target material 5 in etching is shown in
The invention being thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the invention, and all such modifications as would be obvious to those skilled in the art are intended to be included within the scope of the following claims.
Claims
1. A plain magnetron sputtering target, comprising a target material, a target back plate, an insulating pad, a target cathode frame, one or more leading pole piece adjustment pads, and one or more juxtaposed magnets, which are stacked in order,
- wherein the leading pole piece adjustment pad is disposed between the insulating pad and the magnet.
2. The plain magnetron sputtering target according to claim 1, wherein the leading pole piece adjustment pad is disposed between the target cathode frame and the magnet.
3. The plain magnetron sputtering target according to claim 1, wherein the leading pole piece adjustment pad is fixed on an upper surface of the corresponding magnet.
4. The plain magnetron sputtering target according to claim 1, wherein the leading pole piece adjustment pad is fixed on a surface of the target cathode frame opposite to the magnet.
5. The plain magnetron sputtering target according to claim 4, wherein the leading pole piece adjustment pad is further fixed on an upper surface of the magnet.
6. The plain magnetron sputtering target according to claim 1, wherein the leading pole piece adjustment pad is disposed between the insulating pad and the target cathode frame.
7. The plain magnetron sputtering target according to claim 6, wherein the leading pole piece adjustment pad is fixed on a surface of the target cathode frame opposite to the insulating pad.
8. The plain magnetron sputtering target according to claim 6, wherein the leading pole piece adjustment pad is fixed on a surface of the insulating pad opposite to the target cathode frame.
9. The plain magnetron sputtering target according to claim 8, wherein a leading pole piece adjustment pad is further fixed on a surface of the target cathode frame opposite to the insulating pad.
10. The plain magnetron sputtering target according to claim 1, wherein the leading pole piece adjustment pad is fixed on a surface of the target cathode frame opposite to the insulating pad.
11. The plain magnetron sputtering target according to claim 1, wherein the leading pole piece adjustment pad is fixed on a surface of the insulating pad opposite to the target cathode frame.
12. The plain magnetron sputtering target according to claim 1, further comprising a cathode mask shield that is provided on the target cathode frame and at least exposing a portion of the target material.
Type: Application
Filed: Apr 4, 2008
Publication Date: Nov 20, 2008
Applicant: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. (Beijing)
Inventor: Yunxin ZHANG (Beijing)
Application Number: 12/098,167
International Classification: C25F 3/02 (20060101);