Systems And Methods That Detect Changes In Incident Optical Radiation
Systems, methods and sensors detect changes in incident optical radiation. Current is driven through one or more active areas of a detector while the incident optical radiation illuminates the active areas. Voltage is sensed across one or more of the active areas, a change in the voltage being indicative of the changes in incident optical radiation.
This application is a continuation-in-part of U.S. patent application Ser. No. 10/532,453 filed 22 Apr. 2005, which is the U.S. national stage entry of PCT application serial number PCT/US03/33522 filed 23 Oct. 2003, which claims priority to U.S. provisional application Ser. No. 60/420,623, filed 23 Oct. 2002. Each of the aforementioned applications are hereby incorporated by reference.
BACKGROUNDExamining surface displacement (e.g., vibration) of an object or surface with optical radiation has advantages in many settings, for example in high-temperature or vacuum conditions where physical contact with the object or surface could easily damage expensive equipment or disrupt the desired vacuum conditions. In another example, it is advantageous to perform contactless, nondestructive testing of structural members or mechanical components, for example for ultrasonic movement of the members or components, or to search for defects. Among various techniques proposed to exploit these advantages, techniques that employ the Fabry-Perot interferometer, the photo-emf effect or photorefractive crystals appear most promising, largely due to their ability to detect nanometer-scale vibrations of rough surfaces in the presence of speckle (speckle is created when the surface under investigation is optically rough, such that laser illumination of the surface and collection of backscatter results in speckle). Nonetheless, each of these techniques also requires “referencing,” which utilizes signal and reference beams from the same wavefronts during direct interferometric detection; for practical applications, this referencing requires additional optical components that often misalign while detecting intensity changes or speckle patterns in the optical radiation, particularly in the presence of mechanical vibration or movement. Misalignment may cause critical failures, because altering the angular relationship between signal and reference beams also changes the grating spacing on the detector. Prior art techniques (for example utilizing the photo-emf effect) are very sensitive to operating at precisely the right grating spacing.
Prior art devices that measure speckle patterns or changes in incidental optical radiation also utilize the power in the optical radiation to drive the output signal. Such devices are problematic because, for example, the power available to these devices is dependent on the detecting area; the electronic output depends on the detecting area so that scaling the device to smaller size results in lower output. Among other drawbacks, this impedes vibration detection since the detecting area must be smaller than the speckle size to avoid signal attenuation and to avoid averaging of variations across the sensing element.
Prior art optical detectors are also problematic whenever a small detecting area is needed and the intensity of the optical radiation is weak. For example, in such situations, photodiodes and photodiode arrays generate very small currents, from micro-amps to nano-amps, that are very hard to measure; they also generate signals that are significantly impacted by noise and interference. Improvements to optical detectors are therefore needed.
SUMMARY OF THE INVENTIONCertain optical radiation detectors described hereinbelow are useful in the measurement of time-varying optical radiation. The detectors may provide a voltage output that is less sensitive to electromagnetic interference as compared to optical detectors of the prior art.
In one embodiment, an optical sensor has a detector made of photoconductive material; the photoconductive material's photoconductivity depends on the intensity of the incident optical radiation. The sensor may employ one of three alternative methods to measure change in the intensity: in the first method, the sensor injects a constant current into the detector and measures the change in voltage drop across one or more active areas of the photoconductive material; in the second method, the sensor applies a constant voltage across the detector so that one or more active areas of the detector form a voltage divider, wherein the distribution of voltage drops across the active areas then depends on illumination by the incident optical radiation. The second method may also employ a fixed resistance connected in series with the active areas, to form the voltage divider. In the third method, the applied voltage or current is modulated by a square wave or other waveform (e.g., a periodic modulation such as a sine wave). Selective amplification at the frequency of the modulation may help to achieve higher signal-to-noise ratios.
In one exemplary use of the optical sensor, a four-point measurement is made in which current is sourced and sunk through two contacts to the photoconductive material; and the voltage drop is observed across an illuminated active area formed by two additional contacts placed between, and collinear with, the two current source/sink contacts. Additional active areas may be formed by adding additional contacts between the current source/sink contacts. One exemplary optical sensor employs four active areas fabricated with semi-insulating gallium arsenide (GaAs), though other detector materials may be employed.
The optical sensor may be used to detect vibrations and surface displacements by observing the changes in interference or speckle patterns due to surface motion (e.g., continuous or transient surface motion with amplitudes of the order of nanometers, or higher). This detection is for example useful to assess mechanical resonances and ultrasonic waves associated with non-destructive testing. When the detector has an array of active areas, as opposed to a single point detector element, signal processing electronics may average the output of the individual active areas to provide a large and observable signal, without the need for nonlinear phase-compensating elements of the prior art. Accordingly, laser light scattered off an optically rough surface forms the speckle pattern that reconfigures and/or moves laterally as the surface displaces, either due to a mechanical resonance or due to an ultrasonic wave. As the speckle pattern moves, local variations in optical intensity are detected by the optical sensor.
Certain advantages may be realized by the optical sensor. First, an external current or voltage source powers the detector, which then uses optical power from the incident radiation to modulate the constant current with information content. The incident optical radiation is therefore not used as the power source to drive the signal, as in certain devices of the prior art. The same advantage is obtained when using the detector with a voltage source. Second, the optical sensor may be scaled to small size (e.g., in the micrometer range) since the photoconductivity of the photoconductive material depends on the detector's aspect ratio rather than on total surface area. This allows for detection over a single speckle, making it possible to reduce dimensions of the optical arrangement illuminating the surface to a portable unit (e.g., a unit employing optical fiber). Third, by using the four-point measurement, a voltage output is produced that is compatible with observation instruments such as an electronic scope or spectrum analyzer. The voltage output is for example millivolts, compared to nanoamps to microamps generated by photodiodes used in comparable applications.
The optical sensor may have various applications, and may be conveniently employed with known systems that generate ultrasonic waves in objects. By way of example, it may be used with laser-based ultrasound to measure sample thicknesses or to detect defects. In this example, a pulse laser generates a high-power pulse (e.g., a pulse with megawatts of power and with nanoseconds of illumination) on the surface of the sample to generate ultrasonic waves in the sample. A separate detection laser (e.g., a HeNe laser) then illuminates the sample and the optical sensor detects changes in optical radiation reflected off of the surface. In another example, piezoelectric transducers generate the ultrasonic waves in the object; the detection laser and optical sensor are then used to non-destructively test the object (e.g., for defects or object thickness).
The optical sensor may also be used within manufacturing (e.g., for quality assurance issues), for example, or within transportation (e.g., for safety issues). Non-destructive testing in manufacturing, for example, enables quality control by detecting defects (e.g., cracks and inclusions in finished products). Another application for the optical sensor is within metal processing, where continuity checks of thin sheet goods can be made by detecting Lamb waves. Yet another application for the optical sensor is the determination of how many balls are in a bearing. In transportation, the optical sensor may be deployed in the detection of cracks, inclusions or other defects in solid objects, such as railroad tracks, wheels, axles, wings, hulls or other components of trains, cars, trucks, ships or aircraft. In civil engineering, the optical sensor may be employed in integrity tests of steel girders, bridges, or similar structural components. Misalignments due to earthquakes, ground shifting or structural weaknesses can also be monitored through use of the optical sensor. In medical applications, the optical sensor may be deployed, for example, in the detection of cavities in teeth.
In addition to ultrasonic testing, the optical sensor may be used at lower frequencies, to measure vibrations (e.g., audible or sub-sonic vibrations). For example, the optical sensor may enhance security applications by remotely monitoring conversations through vibrating windows of a building or by determining whether activity exists within a vehicle through vibrations of the vehicle.
Because the detector of the optical sensor may be scaled in size to be compatible with multi- and single-mode optical fibers, the optical sensor may also be used when illumination is provided by fibers. Accordingly, when vibration of a surface hidden from view needs to be monitored, the detector and optical fibers may be disposed in hard to reach locations that heretofore were inaccessible. In one example, detection of cavities in teeth may require fiber illumination.
Fibers may also be employed within certain communications systems, and so the optical sensor may have application within communications. For example, by placing the active area of the detector onto an optical fiber, with its area matched to that of a single mode fiber, changes in optical radiation from the fiber may be detected. If the detector employs an array of active areas, the optical sensor may also be employed with fiber arrays, for LED-driven parallel systems. An optical sensor employing the arrayed detector may also be used to sense higher-order Gaussian beams in free-space communications systems.
The detector may employ a two-dimensional array of active areas, to facilitate optical imaging. In one example, the arrayed detector may be used as a type of spatial filter, for example to facilitate precision alignment of machinery. Other arrayed detectors may be used in tracking, as a navigation aid for ships, aircraft, or missiles, or as a motion sensor, detecting, for example, intruders.
In measurements of vibration, the optical sensor may be used in a “referenceless” configuration, since it does not require direct interferometric detection. It may also operate without significant optical alignment. These benefits occur because the optical detector can be made very small and used with an array of active areas; the optical sensor lends itself to use in referenceless experimental setups that do not depend on direct interferometric detection.
In one embodiment, a method detects changes in incident optical radiation. Current is driven through one or more active areas of a detector while the incident optical radiation illuminates the active areas. Voltage is sensed across one or more of the active areas, a change in the voltage being indicative of the changes in incident optical radiation.
In another embodiment, a method determines surface motion, including: illuminating a surface with a laser having a wavelength that is smaller than defined geometric features of the surface; and detecting moving speckle indicative of surface motion by: driving current through one or more active areas of a detector while the moving speckle illuminates the active areas; sensing voltage across one or more of the active areas to detect the surface motion.
In one embodiment, a method determines surface motion, including: generating an interference pattern that varies with surface motion; and detecting the interference pattern by: driving current through one or more active areas of a detector while the interference pattern illuminates the active areas; and sensing voltage across one or more of the active areas to detect the surface motion.
In one embodiment, a sensor detects changes in incident optical radiation. A detector has one or more active areas formed of photoconductive material. A source applies current through the active areas. Electronics determine voltage drop across at least one of the areas, the voltage drop being indicative of the changes in incident optical radiation.
In one embodiment, an optical radiation detector is provided. The detector has photoconductive material forming one or more active areas. Input electrodes provide for connection to a source, to drive current through the active areas. Output electrodes provide for connection to an observation instrument, to sense voltage drop across one or more of the active areas.
In one embodiment, a method aligns two objects, including: generating an interference pattern dependent upon a distance between the two objects; and sensing changes in the interference pattern to achieve optimal alignment between the objects by: driving current through one or more active areas of a detector while the interference pattern illuminates the active areas; and sensing voltage across one or more of the active areas, a change in the voltage being indicative of a change in the distance between the objects.
In one embodiment, a detector for detecting changes in incident optical radiation includes an insulating substrate having a first surface and a first photoconductive active area, formed on the first surface of the insulating substrate, for detecting the incident optical radiation. The first active area is formed of a group IV semiconductor. The detector further includes a first and a second electrical contact both electrically coupled to the first active area.
In one embodiment, a sensor for detecting a change in incident optical radiation includes a detector. The detector includes an insulating substrate including a layer of silicon and a layer of silicon dioxide formed on the silicon layer. An upper surface of the silicon dioxide layer opposite to the silicon layer forms a first surface. The detector further includes a first photoconductive active area, for detecting the incident optical radiation, formed on the first surface. The first active area is formed of silicon. The detector additionally includes a first and a second electrical contact both electrically coupled to the first active area for driving an electrical current from a current source through the first active area. The sensor further includes electronics for measuring a change in voltage across the first active area to determine the change in the incident optical radiation.
In one embodiment, a sensor for detecting a change in incident optical radiation includes a detector. The detector includes an insulating substrate including a layer of silicon and a layer of silicon dioxide formed on the silicon layer. An upper surface of the silicon dioxide layer opposite to the silicon layer forms a first surface. The detector further includes a photoconductive active area, for detecting the incident optical radiation, formed on the first surface of the insulating substrate. The active area is formed of silicon. The detector additionally includes a first and a second electrical contact both electrically coupled to the active area, for applying a voltage from a voltage source across the active area. The sensor further includes a load resistor electrically connected in series with the active area and electronics for measuring a change in voltage across the load resistor, the change in voltage being indicative of the change in the incident optical radiation.
In one embodiment, a method for detecting a change in optical radiation includes driving an electric current through a first photoconductive active area formed of silicon on a first surface of an insulating substrate while the optical radiation illuminates the first active area. The insulating substrate includes a layer of silicon and a layer of silicon dioxide formed on the silicon layer. An upper surface of the silicon dioxide layer opposite to the silicon layer forms the first surface. The method further includes measuring a voltage change across the first active area, the voltage change being indicative of the change in the optical radiation.
In one embodiment, a method for detecting a change in optical radiation includes applying a voltage across a first photoconductive active area formed of silicon on a first surface of an insulating substrate, while the optical radiation illuminates the first active area. The insulating substrate includes a layer of silicon and a layer of silicon dioxide formed on the silicon layer. An upper surface of the silicon dioxide layer opposite to the silicon layer forms the first surface. The method further includes measuring a voltage change across a first load resistor electrically connected in series with the first active area, the voltage change across the first load resistor being indicative of the change in the optical radiation.
It is noted that, for purposes of illustrative clarity, certain elements in the drawings may not be drawn to scale. Specific instances of an item may be referred to by use of a numeral in parentheses (e.g., detector 300(1)) while numerals without parentheses refer to any such item (e.g., detectors 300).
Detector 14 is also shown with two other active areas 18 and 22, which are used in the four-point measurement, but which are not used to detect radiation 12 for detector 14. If detector 14 were made without active areas 18, 22 (that is, active areas 18, 22 were not present), the injected current to detector 14 would flow through electrodes 26, 28, used for the four-point measurement; and the four-point measurement would instead depend on the physical characteristics of electrodes 26, 28. With the four-point measurement as in
If source 32 is a constant voltage source, then the voltage drop across active areas 18, 22 may be taken into account. Specifically, if illumination of active area 20 changes, the voltage drop will change if there is a differing intensity change incident on active areas 18, 22 as compared to active area 20. Accordingly, there may be a situation where detection is nullified, though rare in occurrence. For example, if active areas 18, 22 are “dark” (not illuminated), the voltage drop across active area 20 accurately detects changes in incident optical radiation 12. Accordingly, in one embodiment, a mask (not shown) covers active areas 18, 22 such that they are dark, but the dimensions of areas 18 and 22 are chosen such that they still carry current from source electrode 24 to drain electrode 30. Preferably, the dark conductivity of regions 18, 22 is high enough that they are not highly resistive. Active areas 18, 22 may also be made very thin to enable current flow through relatively high resistivity material. This will also reduce problems associated with illumination of regions 18, 22. Keeping active areas 18, 22 in the dark by a mask or other means may thus depend upon the material and geometry used to provide one solution ensuring a variation in voltage drop across active area 20 is proportional to its illumination.
As intensity of incident radiation 12 varies, the photoconductance S of material between connectivity points 26, 28 is determinable. As in Equation 1 below, photoconductance S depends on the active area's aspect ratio (width w divided by length d) for a given absorption depth a, such that detector 14 may be scaled down to the desired small size without loss of signal:
σ stands for conductivity, which depends on the carrier concentration generated by incident optical radiation 12. The carrier concentration depends on the intensity of incident radiation 12, rather than the total power absorbed, so that photosensitive regions 18, 20, 22 may be sized to fit within a desired grating spacing (or to some other desired dimension, such as to correspond to speckle size). The arrangement of electrodes 24, 26, 28, 30 may be chosen so as to prevent diffusion of charge carriers out of detector 14. This can be achieved, for example, by selecting width w to be typically at most one diffusion length wide (dimension w), while depth a is typically at least one diffusion length deep (dimension a). This ensures that photogenerated charge carriers will recombine before they can contribute to conductivity outside the region of interest.
With regard to active areas 18, 22, width w and length d need not be the same as active area 20. In one embodiment, for example, width w and length d for active areas 18, 22 are chosen (e.g., via doping density of the photoconductive material) so that current flows through active area 20, but also such that there is no short-circuit between electrodes 24, 26 and 28, 30, respectively.
The photoconductive area forming active area 20 is for example a semiconductor. For example, the photoconductive material may comprise either a III-V semiconductor or a II-VI semiconductor. A III-V semiconductor is defined by one or more components of the composition from the III column of the periodic table, and one or more components of the composition from the V column. A II-VI semiconductor is defined by one or more components of the composition from the II column of the periodic table, and one or more components of the composition from the VI column.
Note that the variation of intensity in incident optical radiation 12 may occur through cyclical (e.g., periodic) motion of optical radiation 12 back and forth across detector 14, along a direction 36, and typically at one or more dominant frequencies. The variation in intensity may also occur through transient motion of optical radiation 12 across detector 14, along direction 36. Direction 36 is shown illustratively; however the cyclical or transient motion of optical radiation 12 may occur in any orientation relative to detector 14.
By sensing voltage drop across active area 20, sensor 10 produces time-varying voltage that may be analyzed in the time domain or in the frequency domain. Accordingly, it should therefore be clear that detector 14 monitors both periodic and transient motion of optical radiation 12 across detector 14 (for example, along direction 36). Periodic motion may relate to resonant behavior (e.g., vibration) of a surface which reflects radiation 12 to detector 14, for example, while transient motion may for example relate to ultrasonic testing. Hereinafter, periodic and transient motions may be collectively denoted as “motion.”
To increase confidence of detection, to add detection redundancy, to exploit spatial characteristics of illumination, and/or to provide other features as a matter of design choice (such as to provide imaging functionality), additional active areas may be incorporated into detector 14, such as shown in
Although four active areas 52 are shown in
It should also be clear from
In one embodiment, electronics 64 includes a controller (or computer) that also controls modulation of source 58 (e.g., through a control line 65). By modulating injected current or applied voltage to detector 51, selective amplification of the output of sensor 50 at the modulation frequency may be employed to assist in reducing noise. Electronics 64 may also monitor signals of source 58 through control line 65, as a matter of design choice.
A prototype of detector 51 was fabricated in semi-insulating GaAs. Prototype detector 51 was fabricated by etching bulk material away from an underlying substrate (e.g., substrate 16,
The prototype detector 51 was also tested experimentally, by mounting prototype detector 51 within in a dual-inline-package header that connected to electronics 64. Electronics 64 (in this experimental example) amplified the potential difference across each active region 52 and then summed the positive signals from all active regions 52. In order to demonstrate remote measurement of vibrations, an argon laser beam of wavelength λ=488 nm was slightly focused upon a white piece of paper, mounted taut in front of a high-frequency loudspeaker, to a spot size of about D=0.6 mm diameter. The surface normal to the paper was arranged to form 45-degree angles with both the laser beam and a surface normal of detector 51. The laser beam propagated at 90 degrees with respect to the surface normal of detector 51, much like the configuration shown in
as an estimate for the average size of a speckle gives an approximate speckle size d≈50 μm, comparable to the dimensions of the prototype sensing element 52 (40×100 μm). Application of a sinusoidal driving voltage to the loudspeaker caused vibrations of the paper, resulting in lateral and cyclical displacement of the speckle pattern on detector 51 (e.g., back and forth motion 36 over detector 14,
Another experiment was conducted with prototype detector 51. A LiNbO3 electro-optic modulator was placed between a polarizer-analyzer pair; the input polarizer's transmission axis was oriented so as to ensure that light entering the modulator has polarization components along both optical axes. The electrodes of the modulator were not aligned parallel to the principal optical axes of the crystal, so that an applied voltage has different effects on the refractive indices along both axes (which have different electro-optical coefficients). A relative phase difference between the two polarization components is therefore induced, and application of a periodically varying voltage leads to a periodically varying amplitude past the analyzer. Under illumination by a helium-neon laser of wavelength λ=632.8 nm, a clear output signal was observed on the spectrum analyzer for a sinusoidal voltage of frequency 1 MHz applied to the electro-optic modulator, with an average incident intensity of 0.15 mW/cm2 and an intensity modulation depth of m=0.6. The resulting frequency dominant output signal 80 is shown in
Other experiments were performed at frequencies important in ultrasonic testing, from hundreds of kilohertz up to 2 MHz, to determine the sensitivity of the prototype detector 51. At 1 MHz, reducing the modulation depth to m=0.2 reduced the observed peak to −50 dBm, and a further reduction to m=0.05 led to a further decrease to −60 dBm. Accordingly, even for these lower modulation depths, the prototype optical sensor 50 successfully produced a clear output signal, rising 15 to 25 dB above the noise floor.
Embodiments of a detector, which may be used in an optical sensor, include a photoconductive active area formed of a group IV semiconductor, which is formed on an insulating substrate. The group IV semiconductor includes one or more elements of the IV column of the periodic table. Such detectors, for example, are formed from a silicon on insulator (“SOI”) wafer including two layers of silicon and a layer of silicon dioxide disposed therebetween. Detectors including active areas formed of a group IV semiconductor may advantageously offer fast response times. For example, a detector with an active area formed of silicon on a silicon dioxide surface may realize submicrosecond response times. Such response times, for example, may allow the detector to be used in measuring ultrasonic vibrations by detecting changes in optical radiation resulting from such vibrations.
Surface 314 of substrate 304 has a high electrical resistivity. Substrate 304 may include a layer 306 formed of a semiconductor (e.g., silicon) and a layer 315 formed of an insulator (e.g., silicon dioxide), where layer 315 forms surface 314. For example, substrate 304 may include layer 306 formed of silicon and layer 315 formed of silicon dioxide on layer 306. However, substrate 304 could include layers in addition to those shown in
Detector 300 may further include two electrical contacts 310, 312 electrically coupled to active area 308. Electrical contacts 310, 312 provide an electrical interface to active area 308. Electrical contacts 310, 312 are, for example, disposed at opposite ends of active area 308, as shown in
Although detector 300 is illustrated in
Detector 300 is, for example, formed from a SOI wafer.
Wafer 2200 may be formed, for example, by fusion bonding two oxidized wafers of silicon such that the oxidized sides of each wafer adjoin. The silicon side of one of the wafers is then thinned (e.g., such that its thickness ranges from 2 to 10 micrometers). As another example, wafer 2200 may be formed by taking a wafer of silicon and using an ion implantation process to create layer 2204 of silicon dioxide within the wafer.
An embodiment of detector 300 may be, but need not be, formed using the following process. A SOI wafer (e.g., wafer 2200 of
As discussed above, detector 300 may be used in an optical sensor for detecting changes in incident optical radiation 303. In such applications, detector 300 is, for example, electrically biased using a current source or a voltage source. If detector 300 is biased using a current source (e.g., constant current source or time varying current source), the voltage across active area 308 may be measured using electronics (e.g., an observation instrument such as an oscilloscope and/or a spectrum analyzer), where the change in voltage indicates a change in optical radiation 303 incident on active area 308. If detector 300 is biased using a voltage source (e.g., constant voltage source or time varying voltage source), a load resistor is, for example, connected in series with active area 308. The voltage across the load resistor may be measured using electronics (e.g., an observation instrument such as an oscilloscope and/or a spectrum analyzer), where the change in voltage indicates a change in optical radiation 303 incident on active area 308.
The voltage across active area 308 or a load resistor electrically connected in series therewith may, for example, be analyzed in the time domain and/or in the frequency domain. For example, the voltage across active area 308 or a load resistor connected in series therewith may analyzed in the frequency domain (e.g., using a spectrum analyzer) if detector 300 is used in an ultrasonic testing application. Such frequency analysis could be used to isolate frequency dominant voltage signals indicating modulation of optical radiation 303 incident on active area 308 due to vibration of an object's surface during ultrasonic testing of the object.
In optical sensor 400, active area 308(1) is electrically biased by voltage source 404. Voltage source 404 is, for example, a constant voltage source. As another example, voltage source 404 is a time varying voltage source that may be modulated by a periodic waveform (e.g., a square wave) having a desired frequency such that the voltage across active area 308(1) is modulated. Such modulation of voltage source 404 may improve a signal to noise ratio of voltage measurements in optical sensor 400.
Active area 308(1) is electrically connected in series with voltage source 404 and a load resistor 402. Although
Load resistor 402 typically has a resistance that is much smaller than the equivalent resistance of active area 308(1). The voltage across load resistor 402 may be measured by electronics 406 (e.g., an oscilloscope, spectrum analyzer, and/or special purpose voltage measuring device) to detect a change in optical radiation 403 incident on active area 308(1). Electronics 406 is optionally connected 407 to voltage source 404 such that electronics 406 controls at least one aspect of the operation of voltage source 404 and/or monitors voltage source 404. In an embodiment, electronics 406 is operable to control modulation of voltage source 404.
As discussed above, a plurality of active areas 308 may be formed on surface 314 of detector 300. Accordingly, embodiments of sensor 400 may include a plurality of active areas 308(1). In such embodiments, each active area 308(1) will have a respective instance of load resistor 402 electrically connected therewith in series. Electronics 406 measures the voltage across at least one instance of load resistor 402. Stated differently, electronics 406 may measure the voltage across some or all instances of load resistor 402.
In embodiments of sensor 400 including a plurality of active areas 308(1), each instance of active area 308(1) and its respective load resistor 402 may be biased by a common voltage source 404. Alternately, a plurality of voltage sources 404 (e.g., one voltage source 404 for each active area 308(1) and load resistor 402 pair) may be used to electrically bias the plurality of active areas 308(1) and their respective load resistors 402.
In embodiments of sensor 400 including a plurality of active areas 308(1), the change in voltage across two or more instances of load resistor 402 may be compared to determine spatial characteristics of optical radiation 403 incident on sensor 400. For example, the time rate of change of the voltage across each of two load resistors 402 may be compared, wherein the difference between the two measured time rates indicates spatial characteristics of the optical radiation 403.
If the resistance magnitude of load resistor 402 is much less than the magnitude RD of equivalent resistance RL, the current through load resistor 402 may be approximated by the following second order linear differential equation:
In equation 3, I is the current through load resistor 402, RL is load resistance 402, C is parasitic capacitance 452, τ is the effective carrier lifetime in the material of active area 308(1), V is the magnitude of voltage source 404, W is the width of active area 308(1), L is the length of active area 308, σ0 is the dark conductivity of the material of active area 308(1), e is the unit charge, μ0 to is the effective carrier mobility of the material of active area 308(1), and G is the carrier generation rate of the material of active area 308(1). Equation 3 has the characteristic of a damped harmonic oscillator (“DHO”).
Empirical tests were conducted by the present inventors on a prototype of optical sensor 400. One such test was to determine the impulse response of the prototype. In this test, load resistor 402 had a resistance of 120 ohms, and an ultrafast laser pulse was applied to active area 308(1) of detector 300(1). The laser pulse was centered at 800 nanometers and had a full width at half maximum of approximately 40 femtoseconds, a peak intensity of 3.75 megawatts per square centimeter, and a pulse energy per unit area of 150 nanojoules per square centimeter.
The circles on graph 500 represent empirical data points. The DHO response of Equation 3 can then be overlaid as a solid line. As can be observed from
Another empirical test of the prototype of optical sensor 400 was performed to determine its ability to monitor ultrasonic vibrations.
Optical sensor 400 detected back scattered light 614 from surface 616 of aluminum strip 602. In particular, back scattered light 614 was collected and focused with a lens 626 and a microscope objective 628 onto active area 308(1) of detector 300(1). (Active area 308(1) is not shown in
A laser 606 was used to introduce an ultrasonic pulse in aluminum strip 602. Laser 606 applied a high energy, Q-switched Nd:YAG pulse 620 to a point 624 on a surface 618 of aluminum strip 602, where surface 618 was opposite of surface 616. The pulse from laser 602 had a width of 5 nanoseconds, a spot size of 3 millimeters, and a pulse energy of 20 millijoules. The separation between point 624 and point 622 on aluminum strip 602 was adjustable to provide varying arrival times of the acoustic pulse at point 622.
The voltage across load resistor 402 of the prototype of optical sensor 400 was amplified using amplifier 608. The amplified voltage signal was in turn analyzed using oscilloscope 610.
As can be observed from
Optical sensor 800 includes a detector 802, which is an embodiment of detector 300 of
Detector 802 includes one or more active areas 808 formed on surface 814. Active areas 808 are an embodiment of active area 308 of detector 300. Active areas 808 are, for example, formed of silicon.
Detector 802 includes electrical contacts 810, 812 for driving a current through the one or more active areas 808 of detector 802. Such current is provided, for example, by a current source 830 as illustrated in
Detector 802 includes at least two additional electrical contacts 822 for measuring the respective voltage across each instance of active area 808. Electrical contacts 822 are, for example, electrically coupled to opposing ends of each instance of active area 808. In the example of
Detector 800 further includes active areas 820 formed of a semiconductor or resistive material, which active areas 820 are not used to detect optical radiation. For example, active area 820(1) separates electrical contact 810 from electrical contact 822(1), and active area 820(2) separates electrical contact 822(5) from electrical contact 812. Such separation enables four point measurement in optical sensor 800. Active areas 820(1) may be, but need not be, formed of the same semiconductor material (e.g., silicon) as active areas 808.
The voltage across at least one instance of active area 808 is measured via electrical contacts 822 using electronics 806 (e.g., an oscilloscope, spectrum analyzer, and/or special purpose voltage measuring device). For example,
Electronics 806 is optionally connected 807 to current source 830 such that electronics 806 controls at least one aspect of the operation of current source 830 and/or monitors current source 830. In an embodiment, electronics 806 is operable to control modulation of current source 830.
In embodiments of sensor 800 including a plurality of active areas 808 (e.g., the embodiment of
Although electrodes/contacts and active areas in
The material or connectivity between elements A, B, C, D, E should permit current flow from electrode B to D, and through area A, and also permit measurement of the voltage drop across element A. In one configuration, this material comprises the same photoconductive substrate forming area A (such as in
There is also no requirement that all electrodes B, C, D, E be in the same plane. In one example, it may be preferable for manufacturing, for sensitivity, and/or for 2D or 3D detector arrays, to have sensing electrodes C, E and/or injecting electrodes B, D in one or more planes that are above and below the plane of active area A. By analogy, electrodes 54, 56 of detector 51,
In one embodiment, one or more epitaxial thin films may be grown on a substrate for the active areas (e.g., areas 52,
It should be apparent that sensor 110 similarly works for other causes of fiber perturbation—such as pressure, temperature, magnetic field, electric field and/or the presence of chemicals—in place of weight 118. For example, when fiber 116 is in the configuration of a coil of fiber, placement of a human hand adjacent to fiber 116 (and not necessarily in contact with fiber 116) causes changes in the multimode pattern, which in turn is detected by optical sensor 112. It is thus apparent that the single laser or LED 114 and fiber 116 may comprise an array of lasers or LEDs 114, matched to an array of fibers 116, matched to optical sensor 112 configured as an array (e.g., with a detector 51 employing an array of active areas 52, or an array of sensors 50, or with a detector 300 employing an array of active areas 308, or with an array of sensors 112, each with one or more active areas).
It should also be apparent (from reading this disclosure) that optical sensor 112 can be used to sense output of fiber 116, resulting from input laser or LED 114, even when there is no source 118 of perturbation, such as within a communication system. A particularly useful configuration for optical sensor 112 is when it is employed or configured as a two-dimensional or three dimensional array, with fiber 116 replaced by a matching array of fibers, and LEDs 114 being replaced by an array of lasers or LED's. The optical sensor 112 in this configuration spatially matches the array of fibers and is more robust, for example, than the photodiode arrays used today in the prior art.
Certain of the detectors described herein may function as a spatial filter, such as illustrated and discussed now in connection with
In an alternative arrangement, fringes 142 may be produced by interference rather than through single-slit diffraction of gap 138. That is, objects 130, 132 may be formed as part of an interferometer to generate a similar pattern 142, which can also be detected by detector 150 (to determine alignment, angular positions and/or tracking of object 130 relative to object 132).
The processing of signals from individual active regions 148 by electronics (e.g., electronics 64,
Since certain changes may be made in the above methods, sensors and systems without departing from the scope hereof, it is intended that all matter contained in the above description or shown in the accompanying drawings be interpreted as illustrative and not in a limiting sense. For example, although the above description often discusses surface motion as the cause for change of incident optical radiation, it should be clear from reading the above disclosure that moving the detector through a stationary illumination pattern may also be employed to determine changes in incident optical radiation, to determine the motion of the detector relative to the means of generating the stationary optical pattern.
It is also to be understood that the following claims are to cover generic and specific features described herein, and all statements of the scope which, as a matter of language, might be said to fall therebetween.
Claims
1. A detector for detecting changes in incident optical radiation, comprising:
- an insulating substrate having a first surface;
- a first photoconductive active area, formed on the first surface of the insulating substrate, for detecting the incident optical radiation, the first active area formed of a group IV semiconductor; and
- a first and a second electrical contact both electrically coupled to the first active area.
2. The detector of claim 1, the first active area being formed of silicon.
3. The detector of claim 2, the insulating substrate comprising:
- a layer of silicon, and
- a layer of silicon dioxide formed on the silicon layer, an upper surface of the silicon dioxide layer opposite to the silicon layer forming the first surface.
4. The detector of claim 3, the first active area having a first end opposite a second end, the first electrical contact being electrically coupled to the first end, and the second electrical contact being electrically coupled to the second end.
5. The detector of claim 3, further comprising a third and fourth electrical contact both electrically coupled to the first active area between the first and second electrical contacts.
6. The detector of claim 3, further comprising a second photoconductive active area disposed on the first surface of the insulating substrate, for detecting the incident optical radiation, the second active area formed of silicon, the second active area being physically separated from the first active area.
7. The detector of claim 6, further comprising a third and a fourth electrical contact both electrically coupled to the second active area.
8. The detector of claim 6, the first electrical contact being electrically coupled to both the first and second active areas between the first and second active areas.
9. The detector of claim 8, further comprising a third active area formed on the first surface of the insulating substrate, for detecting the incident optical radiation, the third active area formed of silicon, the third active area being physically separated from the first and second active areas, the second electrical contact being electrically coupled to both the second and third active areas between the second and third active areas.
10. The detector of claim 3, the first surface of the insulating substrate being planar.
11. The detector of claim 3, the first surface of the insulating substrate being cylindrical.
12. A sensor for detecting a change in incident optical radiation, comprising:
- a detector, including: an insulating substrate including: a layer of silicon, and a layer of silicon dioxide formed on the silicon layer, an upper surface of the silicon dioxide layer opposite to the silicon layer forming a first surface; a first photoconductive active area formed on the first surface, for detecting the incident optical radiation, the first active area formed of silicon; and a first and a second electrical contact both electrically coupled to the first active area for driving an electrical current from a current source through the first active area; and
- electronics for measuring a change in voltage across the first active area to determine the change in the incident optical radiation.
13. The sensor of claim 12, the current source being selected from the group consisting of a constant current source and a time varying current source.
14. The sensor of claim 12, further comprising a third and fourth electrical contact both coupled to the first active area, the electronics being connected to the third and fourth electrical contacts to measure the change in voltage across the first active area.
15. The sensor of claim 12, the electronics being coupled to the current source, the electronics being configured to modulate the current source so that current is modulated through the first active area at a desired frequency.
16. The sensor of claim 12, further comprising:
- a laser;
- a power splitter including an arm; and
- an optical fiber coupled to the power splitter,
- the laser generating a laser beam into the arm of the power splitter, the laser beam exiting the optical fiber, reflecting off a surface of an object and reentering the optical fiber to interfere with the laser beam within the optical fiber, and
- the first active area arranged to detect the interfered laser beam within the optical fiber, the change in voltage across the first active area indicating motion of the object's surface.
17. The sensor of claim 12, further comprising an optical fiber optically coupled to the first active area.
18. The sensor of claim 12,
- further comprising a second photoconductive active area, formed on the first surface, for detecting the incident optical radiation, the second active area formed of silicon,
- the second active area being physically separated from the first active area, and
- the second active area being electrically connected in series with the first active area.
19. The sensor of claim 18, further comprising a third electrical contact, the third electrical contact being electrically coupled to the second active area, the second electrical contact being electrically coupled to both the first and second active areas between the first and second active areas.
20. A sensor for detecting a change in incident optical radiation, comprising:
- a detector, including: an insulating substrate including: a layer of silicon, and a layer of silicon dioxide formed on the layer of silicon, an upper surface of the silicon dioxide layer opposite to the silicon layer forming a first surface; a photoconductive active area for detecting the incident optical radiation, the active area formed of silicon on the first surface of the insulating substrate; and a first and a second electrical contact both electrically coupled to the active area, for applying a voltage from a voltage source across the active area;
- a load resistor electrically connected in series with the active area; and
- electronics for measuring a change in voltage across the load resistor, the change in voltage being indicative of the change in the incident optical radiation.
21. The sensor of claim 20, the voltage source being selected from the group consisting of a constant voltage source and a time varying voltage source.
22. The sensor of claim 20, the electronics being coupled to the voltage source, and being configured to modulate the voltage source so that the voltage applied across the active area is modulated at a desired frequency.
23. The sensor of claim 20, further comprising:
- a laser;
- a power splitter including an arm; and
- an optical fiber coupled to the power splitter,
- the laser generating a laser beam into the arm of the power splitter, the laser beam exiting the optical fiber, reflecting off an object's surface, and reentering the optical fiber to interfere with the laser beam within the optical fiber, and
- the active area arranged to detect the interfered laser beam within the optical fiber, the change in voltage across the load resistor indicating motion of the object's surface.
24. The sensor of claim 20, further comprising an optical fiber optically coupled to the active area.
25. A method for detecting a change in optical radiation, comprising the steps of:
- driving an electric current through a first photoconductive active area while the optical radiation illuminates the first active area, the first active area formed of silicon on a first surface of an insulating substrate, the insulating substrate including a layer of silicon and a layer of silicon dioxide formed on the silicon layer, an upper surface of the silicon dioxide layer opposite to the silicon layer forming the first surface; and
- measuring a voltage change across the first active area, the voltage change being indicative of the change in the optical radiation.
26. The method of claim 25, the first active area having a first, second, third, and fourth electrical contact electrically coupled thereto, the third and fourth electrical contacts being disposed between the first and second electrical contacts,
- the step of driving comprising driving the current through the first and second electrical contacts and through the active area,
- the step of measuring comprising measuring the voltage change across the first active area via the third and fourth electrical contacts.
27. The method of claim 25, further comprising driving the current through a second photoconductive active area formed of silicon on the first surface of the insulating substrate, while the optical radiation illuminates the second active area, the second active area being electrically connected in series with the first active area.
28. The method of claim 27, further comprising:
- measuring a voltage change across the second active area,
- comparing a time rate of change of the voltage across both of the first and second active areas, a difference between the two measured time rates being indicative of spatial characteristics of the optical radiation.
29. The method of claim 25, the optical radiation reflecting off an object's surface, the change in the optical radiation resulting from a movement of the object's surface, the method further comprising determining motion of the object's surface from the voltage change across the first active area.
30. The method of claim 25, further comprising:
- illuminating an object's surface with a laser having a wavelength that is smaller than defined geometric features of the surface such that moving speckle, indicative of surface motion, illuminates the first active area while current is driven through the first active area; and
- determining surface motion from the voltage change across the first active area.
31. The method of claim 30, the step of illuminating the object's surface comprising generating an interference pattern that varies with surface motion.
32. The method of claim 30, the surface motion comprising surface displacement.
33. The method of claim 25, the optical radiation comprising an interference or diffraction pattern dependent upon a distance between two objects, the method further comprising:
- detecting changes in the interference or diffraction pattern to align the objects by measuring the voltage change across the first active area, the voltage change indicating a change in the distance between the objects;
- assessing a relative position between the objects; and
- aligning the objects according to changes in the interference or diffraction pattern.
34. The method of claim 33, the optical radiation being generated by illuminating a gap between the objects with a laser.
35. The method of claim 33,
- wherein the step of assessing the relative position comprises assessing relative angles between the two objects, and
- wherein the voltage change across the first active area indicates a change in an angular relationship between the objects.
36. A method for detecting a change in optical radiation, comprising the steps of:
- applying a voltage across a first photoconductive active area while the optical radiation illuminates the first active area, the first active area formed of silicon on a first surface of an insulating substrate, the insulating substrate including a layer of silicon and a layer of silicon dioxide formed on the silicon layer, an upper surface of the silicon dioxide layer opposite to the silicon layer forming the first surface; and
- measuring a voltage change across a first load resistor electrically connected in series with the first active area, the voltage change across the first load resistor being indicative of the change in the optical radiation.
37. The method of claim 36, the optical radiation reflecting off an object's surface, the change in the optical radiation resulting from a movement of the object's surface, the method further comprising determining motion of the object's surface from the voltage change across the first load resistor.
38. The method of claim 36, further comprising:
- illuminating an object's surface with a laser having a wavelength that is smaller than defined geometric features of the surface such that moving speckle, indicative of surface motion, illuminates the first active area while voltage is applied across the first active area; and
- determining the surface motion from the voltage change across the first load resistor.
39. The method of claim 38, the step of illuminating the surface comprising generating an interference pattern that varies with the surface motion.
40. The method of claim 38, the surface motion comprising surface displacement.
41. The method of claim 36, the optical radiation comprising an interference or diffraction pattern dependent upon a distance between two objects, the method further comprising:
- detecting changes in the interference or diffraction pattern to align the objects by measuring the voltage change across the first load resistor, the voltage change indicating a change in the distance between the objects;
- assessing a relative position between the objects; and
- aligning the objects according to changes in the interference or diffraction pattern.
42. The method of claim 41, the optical radiation being generated by illuminating a gap between the objects with a laser.
43. The method of claim 41, wherein assessing a relative position comprises assessing relative angles between the two objects, and wherein the voltage change across the first load resistor indicates a change in an angular relationship between the objects.
44. The method of claim 36, further comprising:
- applying a voltage across a second photoconductive active area formed of silicon on the first surface of the insulating substrate while the optical radiation illuminates the second active area;
- measuring a voltage change across a second load resistor electrically connected in series with the second active area, the voltage change across the second load resistor being indicative of the change in the optical radiation;
- comparing a time rate of change of the voltage across both of the first and second load resistors, a difference between the two measured time rates being indicative of spatial characteristics of the optical radiation.
Type: Application
Filed: Jun 30, 2008
Publication Date: Jan 29, 2009
Inventors: Elsa Garmire (Hanover, NH), Ashifi Gogo (Accra), Jonathan T. Bessette (Essex Junction, VT)
Application Number: 12/165,338
International Classification: G01R 23/04 (20060101); H01L 31/00 (20060101); G01R 13/38 (20060101); G02B 6/00 (20060101);