SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE ADJUSTMENT METHOD

Abstract

There is provided a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor which is disposed in the chamber and on which the substrate is held; a shower head which is provided to face the susceptor with a processing space therebetween; a high frequency power source which generates plasma by applying high frequency power to the processing space; water spray devices which form a surface wet with water on a rear surface of a surface of the susceptor as a temperature adjustment surface; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the water which forms the wet surface is evaporated, thereby controlling a temperature of the surface of the susceptor by using latent heat of evaporation of the water.

Description

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

This application claims the benefit of Japanese Patent Application No. 2010-184996, filed on Aug. 20, 2010, in the Japan Patent Office, and U.S. Patent Application No. 61/382,545, filed on Sep. 14, 2010, in the United States Patent and Trademark Office, the disclosures of which are incorporated herein in their entireties by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a substrate processing apparatus including a temperature adjustment unit for adjusting a temperature of a surface of a component member in a processing chamber and a temperature adjustment method of adjusting the temperature of the surface of the component member in the processing chamber of the substrate processing apparatus.

2. Description of the Related Art

A substrate processing apparatus for performing predetermined processing on various substrates including a semiconductor wafer includes, for example, a processing chamber which is vacuum-exhaustible, a substrate holding stage (susceptor) on which a substrate is held in the processing chamber, and a shower head which faces the substrate holding stage with a processing space therebetween, generates plasma from a process gas due to high frequency power applied to any one of the susceptor and the shower head, and performs plasma processing such as etching, film formation, or the like, on the substrate by using the generated plasma.

In such a substrate processing apparatus, temperatures of the substrate and the susceptor on which the substrate is held are adjusted, for example, as follows. That is, a cooling medium passage, for example, having an annular shape and extending in a circumferential direction is provided in the susceptor and a low temperature cooling medium is circulated in the cooling medium passage through, for example, a pipe for the cooling medium from a chiller unit so that the susceptor cooled by the circulated cooling medium cools the substrate through, for example, an electrostatic chuck (ESC), thereby processing heat input from plasma or the like.

Also, recently, a substrate processing apparatus for cooling by using evaporation heat (hereinafter, latent heat of evaporation) of a cooling medium which is circulated in a cooling medium passage has been suggested (for example, refer to Patent Document 1).

However, in a substrate processing apparatus using a temperature adjustment method of circulating a cooling medium, if an amount of heat input due to plasma or the like is high, since a temperature of the cooling medium should be further reduced and an amount of the cooling medium circulated should be increased, a wide installation space for installing a temperature adjustment unit having great cooling performance is needed. Also, since a lower space inside the susceptor is limited, there is a case where the temperature adjustment unit cannot be installed in the substrate processing apparatus.

Also, in a substrate processing apparatus including a cooling unit using latent heat of evaporation of a cooling medium, since a circulation line, a compressor, a condenser, an expansion valve, and so on only for the cooling unit are needed, a configuration of the apparatus is complicated.

[Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-079539

SUMMARY OF THE INVENTION

To solve the above and/or other problems, the present invention provides a substrate processing apparatus including a temperature adjustment unit which can reduce an installation space and simplify a configuration of the apparatus, and a temperature adjustment method of adjusting a temperature of a component member in a processing chamber in the substrate processing apparatus.

According to an aspect of the present invention, there is provided a substrate processing apparatus including: a processing chamber in which predetermined processing is performed on a substrate and which is vacuum-exhaustible; a wet surface forming device which forms a surface wet with a cooling medium on a rear surface of a temperature adjustment surface of a component member in the processing chamber; an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and a pressure adjustment device which adjusts a pressure in the evaporation chamber, wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the cooling medium which forms the wet surface is evaporated, thereby controlling a temperature of the temperature adjustment surface due to latent heat of evaporation of the cooling medium.

A plurality of the temperature adjustment surfaces may be present on a plurality of places of a surface of the component member, and the wet surface forming device, the evaporation chamber, and the pressure adjustment device may be provided on each of the plurality of temperature adjustment surfaces.

The pressure adjustment device may adjust the pressure in the evaporation chamber to a pressure lower than a saturated vapor pressure of the cooling medium.

A vapor discharge passage through which a vapor obtained by evaporating the cooling medium is discharged to the outside of the evaporation chamber may be connected to the evaporation chamber.

The wet surface forming device may be a cooling medium spray device which forms the wet surface by spraying the cooling medium to the rear surface of the temperature adjustment surface.

The wet surface forming device may include a cooling medium container in which at least a part of the rear surface of the temperature adjustment surface is immersed in the cooling medium, and form the wet surface by supplying the cooling medium to the rear surface of the temperature adjustment surface due to surface tension of the cooling medium.

The wet surface forming device may be a shower device which forms the wet surface by spraying the cooling medium to the rear surface of the temperature adjustment surface.

The wet surface forming device may have a porous film provided on the rear surface of the temperature adjustment surface and form the wet surface by supplying the cooling medium to the rear surface of the temperature adjustment surface through the porous film.

The component member in the processing chamber may be a substrate holding stage on which the substrate is held or a shower head which faces the substrate holding stages with a processing space therebetween.

The cooling medium may be water.

According to another aspect of the present invention, there is provided a temperature adjustment method including: forming a surface wet with a cooling medium by supplying the cooling medium to a rear surface of a temperature adjustment surface of a component member in a processing chamber of a substrate processing device including the processing chamber which performs predetermined processing on a substrate and is vacuum-exhaustible; and adjusting a temperature of the temperature adjustment surface due to latent heat of evaporation of the cooling medium by evaporating the cooling medium which forms the wet surface by adjusting a pressure in an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface.

The forming of the wet surface may include controlling the temperature of the temperature adjustment surface based on the pressure in the evaporation chamber and/or an amount of the cooling medium supplied.

After the pressure in the evaporation chamber is set to a pressure lower than a saturated vapor pressure of the cooling medium, the amount of the cooling medium supplied is adjusted, thereby controlling the temperature of the temperature adjustment surface.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:

FIG. 1 is a cross-sectional view showing main parts of a substrate processing apparatus according to an embodiment of the present invention, and a partially enlarged view thereof;

FIG. 2 is a graph showing a relationship between a pressure in an evaporation chamber and a temperature of a temperature adjustment surface in the present embodiment;

FIG. 3 is a graph showing a relationship between an amount of processed heat and an amount of a cooling medium supplied to a temperature adjustment unit in the present embodiment;

FIG. 4 is a cross-sectional view showing main parts of a first modified example of the substrate processing apparatus according to the present embodiment of the present invention, and a partially enlarged view thereof;

FIG. 5 is a graph showing a relationship between an amount of processed heat and an amount of water supplied to a water container in the first modified example of the substrate processing apparatus according to the present embodiment of the present invention;

FIG. 6 is a cross-sectional view showing main parts of a second modified example of the substrate processing apparatus according to the present embodiment of the present invention, and a partially enlarged view thereof; and

FIG. 7 is a cross-sectional view showing main parts of a third modified example of the substrate processing apparatus according to the present embodiment of the present invention, and a partially enlarged view thereof.

DETAILED DESCRIPTION OF THE INVENTION

The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown.

FIG. 1 is a cross-sectional view showing main parts of a substrate processing apparatus 10 according to an embodiment of the present invention, and a partially enlarged view thereof.

Referring to FIG. 1, the substrate processing apparatus 10 includes a processing chamber (chamber) 11 which performs predetermined plasma processing such as etching, film formation, or the like, on a substrate and is vacuum-exhaustible. A substrate holding stage (susceptor) 12 is provided at a center of a lower portion in the chamber 11. The substrate is held on a top surface 12a of the susceptor 12. A first high frequency power source 13 is connected to the susceptor 12 with a first matcher (not shown) therebetween, and the first high frequency power source 13 applies high frequency power for bias of a relatively low frequency, for example, 2 MHz, to the susceptor 12. The susceptor 12 serves as a lower electrode.

A shower head 14 is disposed in a ceiling portion to face the susceptor 12 with a processing space S therebetween. A second high frequency power source 15 is connected to the shower head 14 with a second matcher (not shown) therebetween, and the second high frequency power source 15 applies high frequency power for plasma generation of a relatively high frequency, for example, 60 MHz, to the shower head 14. The shower head 14 serves as an upper electrode.

In the substrate processing apparatus 10, the top surface 12a of the susceptor 12, as a component member in the chamber, is a temperature adjustment surface. That is, in the chamber 11, when predetermined plasma processing is performed on the substrate (not shown), the substrate is heated due to heat input from plasma to, for example, 300° C. or higher. An optimal processing temperature of the substrate in plasma etching is, for example, about 40° C. Accordingly, the top surface 12a of the susceptor 12 is a temperature adjustment surface which needs to be cooled by using a temperature adjustment unit in order to reduce a temperature of the substrate to the optimal processing temperature.

Here, a temperature adjustment surface refers to a surface of a component member which is disposed in the chamber and whose surface temperature needs to be adjusted to a predetermined temperature for a substrate processing purpose. Also, the component member in the chamber is a broad concept including a member constituting an inner wall of the chamber 11.

A temperature adjustment device for adjusting a temperature of a temperature adjustment surface mainly includes: a plurality of water spray devices 16 which form a surface wet with a cooling medium, for example, a surface wet with water, on a rear surface 12b (hereinafter, referred to as a rear surface of the susceptor) which is a closest surface to the top surface 12a of the susceptor 12 (hereinafter, referred to as a surface of the susceptor); an evaporation chamber 17 which isolates the wet surface formed on the rear surface 12b of the susceptor 12 from an atmosphere around the wet surface; a manometer 20 which monitors a pressure in the evaporation chamber 17; and a pressure adjustment device which adjusts the pressure in the evaporation chamber 17. The pressure adjustment device includes an exhaust pipe 18 connected to the evaporation chamber 17, an exhaust pump (not shown) connected to the exhaust pipe 18, and an APC valve 19 which controls the pressure in the evaporation chamber 17.

In the substrate processing apparatus 10 configured as described above, a temperature of the surface 12a of the susceptor 12 as a temperature adjustment surface is adjusted as follows.

That is, first, water is supplied as a cooling medium to the water spray devices 16 through a water supply pipe (not shown) from a water storage tank which contains the water, the water is upwardly sprayed as shown in a partially enlarged view I of FIG. 1 from the water spray devices 16, and a surface wet with the water of a cooling medium is formed on the rear surface 12b of the susceptor 12.

In this case, an amount of the water sprayed is large enough to form a uniformly thin water film over the entire rear surface 12b of the susceptor 12. Also, at this time, an inside of the evaporation chamber 17 is depressurized by using the exhaust pump, and the pressure in the evaporation chamber 17 is adjusted to a pressure slightly lower than a saturated vapor pressure of the water by using the APC valve 19. Since the pressure in the evaporation chamber 17 is adjusted to a pressure slightly lower than the saturated vapor pressure of the water, the water on the wet surface formed on the rear surface 12b of the susceptor 12 is evaporated, heat corresponding to latent heat during evaporation of the water is removed at this time, and each of the rear surface 12b of the susceptor 12 and the surface 12a of the susceptor 12, which is a temperature adjustment surface, is cooled to a predetermined temperature.

An operation of each component member of the substrate processing apparatus 10 is controlled by a CPU of a control unit included in the substrate processing apparatus 10 according to a program corresponding to temperature adjustment process.

According to the present embodiment, since a surface wet with water as a cooling medium is formed on the rear surface 12b of the surface 12a of the susceptor 12 as a temperature adjustment surface and the water which forms the wet surface is evaporated by adjusting the pressure in the evaporation chamber 17, which isolates the wet surface from an atmosphere around the wet surface, to cool not only the rear surface 12b of the susceptor 12 but also the surface 12a of the susceptor 12 by using latent heat of evaporation of the water, a configuration of the apparatus can be simplified and an installation space can be reduced compared to a conventional temperature adjustment apparatus which circulates a cooling medium.

That is, according to the present embodiment, although a pipe for supplying water as a cooling medium is needed, since the supplied water is discharged as vapor to the outside of the evaporation chamber through the exhaust pipe 18, a pipe for discharging the water is not necessary. Accordingly, a temperature control device of a chiller and a heat-shielding structure of a coolant pipe, which are conventionally necessary, become unnecessary. Accordingly, the present embodiment can be widely applied from a substrate processing apparatus having a small installation space to a large substrate processing apparatus in which a temperature of a surface of a component member having a large area needs to be adjusted. In particular, the present embodiment is suitable for a substrate processing apparatus in which it is difficult to secure a circulation passage for a cooling medium.

In the present embodiment, the temperature of the surface 12a of the susceptor 12, which is a temperature adjustment surface, is controlled based on an amount of water supplied to the water spray devices 16 and the pressure in the evaporation chamber 17. Since latent heat of evaporation of the water is rarely changed due to pressure, the pressure in the evaporation chamber 17 may be a primary control condition and the amount of the water supplied to the water spray devices 16 may be a secondary control condition.

That is, a saturated vapor pressure of water at which the temperature of the surface 12a of the susceptor 12 is a desired temperature may be obtained, the pressure in the evaporation chamber 17 may be maintained at the saturated vapor pressure, and with respect to heat input which varies slightly such as heat input from plasma, an amount of the water supplied may be adjusted, thereby controlling the saturated vapor pressure to be maintained as long as possible. Also, with respect to a sudden input of heat, the pressure in the evaporation chamber 17 may be quickly reduced, thereby increasing an amount of the water evaporated.

In the present embodiment, if heat input from plasma in the susceptor 12 is processed or retrieved by using a temperature adjustment unit, latent heat of evaporation of water is, for example, 2257 kJ/kg, and the heat input from the plasma is A kJ/sec, the heat input from the plasma may be retrieved and processed by controlling evaporation of the water to be N2257 kg/sec.

In the present embodiment, the temperature of the surface 12a of the susceptor 12, which is a temperature adjustment surface, may be adjusted to be within a range, for example, from 0° C. to 80° C., by using water at room temperature as a cooling medium.

FIG. 2 is a graph showing a relationship between the pressure in the evaporation chamber 17 and the temperature of the surface 12a of the susceptor 12a in the present embodiment.

In FIG. 2, it is found that the temperature of the surface 12a of the susceptor 12 is about 10° C. when the pressure in the evaporation chamber 17 is reduced to 1230 Pa, and the temperature of the surface 12a of the susceptor 12 is about 0° C. when the pressure in the evaporation chamber 17 is reduced to 610 Pa from a state where the pressure in the evaporation chamber 17 is 50000 Pa and the temperature of the surface 12a of the susceptor 12 is adjusted to 80° C. Also, the temperature of the surface 12a of the susceptor 12 may be reduced to, for example, about −10° C. by setting each condition. In this case, since there is a risk that a water supply passage may be frozen, a heater for preventing freezing may be provided in the water supply passage.

In the present embodiment, an amount of heat which can be processed varies according to an amount of water supplied to the water spray devices 16, in other words, an amount of evaporated water.

FIG. 3 is a graph showing a relationship between an amount of water supplied to the water spray devices 16 and an amount of processed heat in the present embodiment. Also, in FIG. 3, which is a graph showing a relationship between the amount of supplied water and the amount of processed heat when the pressure in the evaporation chamber 17 is 5000 Pa, it is found that the amount of processed heat is increased in proportion to the amount of supplied water (an amount of evaporated water).

In the present embodiment, a temperature of a surface of the susceptor 12 may be partially adjusted. That is, a central portion and a peripheral portion of the surface 12a of the susceptor 12 may be adjusted to different temperatures. In this case, wet surface forming devices, for example, the water spray devices 16, the evaporation chambers 17, and the pressure adjustment devices 18 and 19, are respectively provided on a portion of the rear surface 12b of the susceptor corresponding to the central portion of the surface 12a of the susceptor 12 and on a portion of the rear surface 12b of the susceptor 12 corresponding to the peripheral portion of the surface 12a of the susceptor 12, and are individually independently controlled to partially adjust the temperature of the surface 12a of the susceptor 12. There may be one or more predetermined portions which are temperature adjustment surfaces, and a wet surface forming device and a pressure adjustment device are provided on each temperature adjustment portion. Also, in the present embodiment, a surface temperature distribution of the susceptor 12 may be adjusted by changing a time of spraying water from the water spray devices on a temperature adjustment surface.

In the present embodiment, examples of component members in the chamber may include various members including the shower head 14, a deposition shield (not shown), a focus ring (not shown), and a shield ring (not shown) as well as the susceptor 12, and surfaces of these members may be temperature adjustment surfaces.

In the present embodiment, although a surface wet with water is formed on the rear surface 12b of the surface 12a of the susceptor 12, which is a temperature adjustment surface, there may be considered a case where it is difficult to form a wet surface on a rear surface of a component member. In this case, a surface wet with water may be formed on a surface closest to a temperature adjustment surface, for example, a side surface adjacent to a rear surface of the temperature adjustment surface.

In the present embodiment, although water which is optimal as a cooling medium is used a liquid having high latent heat of evaporation such as methanol or ammonia may be used instead of the water.

Next, modified examples of the substrate processing apparatus according to the present embodiment of the present invention will be explained.

FIG. 4 is a cross-sectional view showing main parts of a first modified example of the substrate processing apparatus according to the present embodiment of the present invention, and a partially enlarged view thereof.

In FIG. 4, in the substrate processing apparatus, a rear surface 22b facing a surface 22a of a susceptor 22 is an uneven surface on which a plurality of convex portions are formed, an evaporation chamber 24 which isolates the uneven surface from an atmosphere around the uneven surface, and a water container 23 which is disposed in the evaporation chamber 24 is provided, the convex portions of the rear surface 22b of the susceptor 22 are partially immersed in the water container 23, and a wet surface is formed by supplying water as a cooling medium to the rear surface 22b of the susceptor 22 by using surface tension as shown in a partially enlarged view IV of FIG. 4. Then, in the same manner as that of the present embodiment, the surface 22a of the susceptor 22 is cooled by using latent heat of evaporation when the water which forms the wet surface is evaporated.

Even in the first modified example of the present embodiment, like in the present embodiment, since a temperature adjustment device which can reduce an installation space and simplify a configuration of the apparatus can be realized, a temperature of a temperature adjustment surface can be efficiently adjusted to a predetermined temperature. Also, in the first modified example of the present embodiment, a surface temperature distribution of the susceptor 22 may be adjusted by changing sparseness or denseness of the uneven surface on the temperature adjustment surface.

An experiment example using the first modified example of the present embodiment will be explained below.

When the substrate processing apparatus of FIG. 4 is used and there is heat input (not shown) from the surface 22a of the susceptor 22, an amount of water supplied to the water container 23 to maintain a temperature of the surface 22a of the susceptor 22 at 25° C. by using latent heat of evaporation of the water was examined. As a result, it was found that an amount of heat input from the surface 22a of the susceptor 22 and the amount of water supplied to the water container 23 have a good correlation.

FIG. 5 is a graph showing a relationship between an amount of heat input from the surface 22a of the susceptor 22 and an amount of water supplied to the water container 23 when a pressure in the chamber is 670 Pa.

In FIG. 5, as the amount of heat input from the surface 22a is increased, the amount of water supplied to the water container 23 is continuously increased. In such a substrate processing apparatus, if there is no change in the amount of heat input from the surface 22a of the susceptor 22 and the amount of water supplied to the water container 23 is maintained constant, the temperature of the surface 22a of the susceptor 22 can be maintained at 25° C. semi-permanently.

Another modified example of the substrate processing apparatus according to the present embodiment of the present invention will be explained.

FIG. 6 is a cross-sectional view showing main parts of a second modified example of the substrate processing apparatus according to the present embodiment of the present invention, and a partially enlarged view thereof.

In FIG. 6, in the substrate processing apparatus, a plurality of shower devices 33 are provided in an evaporation chamber 34 which surrounds a rear surface 32b of a susceptor 32, a surface wet with water is formed on the rear surface 32b of the susceptor 32 as shown in a partially enlarged view VI of FIG. 6 by using the shower devices 33, and the water, as a cooling medium, which forms the wet surface is evaporated by adjusting a pressure in the evaporation chamber 34.

Even in the second modified example of the present embodiment, like in the present embodiment, due to a temperature adjustment device which can reduce an installation space and simplify a configuration of the apparatus, a temperature of a temperature adjustment surface can be efficiently adjusted.

Another modified example of the substrate processing apparatus according to the present embodiment of the present invention will be explained.

FIG. 7 is a cross-sectional view showing main parts of a third modified example of the substrate processing apparatus according to the present embodiment of the present invention, and a partially enlarged view thereof.

In FIG. 7, in the substrate processing apparatus, a porous layer 43 is disposed to contact a rear surface 42b of a susceptor 42, and water is supplied as a cooling medium from a water supply source (not shown) to the porous layer 43 to exude out from a surface of the porous layer 43, with the surface of the porous layer 43 being adjacent to an evaporation room 44, and thus a surface wet with the water is formed on the surface of the porous layer 43.

Then, in the same manner as that of the present embodiment, the water which forms the wet surface is evaporated by adjusting a pressure in the evaporation chamber 44 by using a pressure adjustment device (not shown), and thus a temperature of a surface 42a of the susceptor 42 is adjusted by using latent heat of evaporation.

Even in the third modified example of the present embodiment, like in the present embodiment, since a temperature adjustment device which can reduce an installation space and simplify a configuration of the apparatus can be realized, a temperature of a temperature adjustment surface can be efficiently adjusted.

Also, in all of the above embodiment and modified examples of the present invention, when a substrate has a large diameter, a gradient temperature difference between an outlet of a cooling medium and an inlet of the cooling medium resulting from an increase in a length of a cooling medium passage can be simply suppressed by uniformly forming a wet surface.

According to the present invention, since a temperature adjustment unit which can reduce an installation space and simplify a configuration of an apparatus can be realized, a temperature of a temperature adjustment surface of a component member in a processing chamber can be efficiently adjusted to a predetermined temperature.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, the present invention is not limited to these embodiments. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.

Claims

1. A substrate processing apparatus comprising:

a processing chamber in which predetermined processing is performed on a substrate and which is vacuum-exhaustible;

a wet surface forming device which forms a surface wet with a cooling medium on a rear surface of a temperature adjustment surface of a component member in the processing chamber;

an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface; and

a pressure adjustment device which adjusts a pressure in the evaporation chamber,

wherein the pressure in the evaporation chamber is adjusted by using the pressure adjustment device such that the cooling medium which forms the wet surface is evaporated, thereby controlling a temperature of the temperature adjustment surface due to latent heat of evaporation of the cooling medium.

2. The substrate processing apparatus of claim 1, wherein a plurality of the temperature adjustment surfaces are present on a plurality of places of a surface of the component member, and the wet surface forming device, the evaporation chamber, and the pressure adjustment device are provided on each of the plurality of temperature adjustment surfaces.

3. The substrate processing apparatus of claim 1, wherein the pressure adjustment device adjusts the pressure in the evaporation chamber to a pressure lower than a saturated vapor pressure of the cooling medium.

4. The substrate processing apparatus of claim 1, wherein a vapor discharge passage through which a vapor obtained by evaporating the cooling medium is discharged to the outside of the evaporation chamber is connected to the evaporation chamber.

5. The substrate processing apparatus of claim 1, wherein the wet surface forming device is a cooling medium spray device which forms the wet surface by spraying the cooling medium to the rear surface of the temperature adjustment surface.

6. The substrate processing apparatus of claim 1, wherein the wet surface forming device comprises a cooling medium container in which at least a part of the rear surface of the temperature adjustment surface is immersed in the cooling medium, and forms the wet surface by supplying the cooling medium to the rear surface of the temperature adjustment surface due to surface tension of the cooling medium.

7. The substrate processing apparatus of claim 1, wherein the wet surface forming device is a shower device which forms the wet surface by spraying the cooling medium to the rear surface of the temperature adjustment surface.

8. The substrate processing apparatus of claim 1, wherein the wet surface forming device has a porous film provided on the rear surface of the temperature adjustment surface and forms the wet surface by supplying the cooling medium to the rear surface of the temperature adjustment surface through the porous film.

9. The substrate processing apparatus of claim 1, wherein the component member in the processing chamber is a substrate holding stage on which the substrate is held or a shower head which faces the substrate holding stages with a processing space therebetween.

10. The substrate processing apparatus of claim 1, wherein the cooling medium is water.

11. A temperature adjustment method comprising:

forming a surface wet with a cooling medium by supplying the cooling medium to a rear surface of a temperature adjustment surface of a component member in a processing chamber of a substrate processing device comprising the processing chamber which performs predetermined processing on a substrate and is vacuum-exhaustible; and

adjusting a temperature of the temperature adjustment surface due to latent heat of evaporation of the cooling medium by evaporating the cooling medium which forms the wet surface by adjusting a pressure in an evaporation chamber which isolates the wet surface from an atmosphere around the wet surface.

12. The temperature adjustment method of claim 11, wherein the forming of the wet surface comprises controlling the temperature of the temperature adjustment surface based on the pressure in the evaporation chamber and/or an amount of the cooling medium supplied.

13. The temperature adjustment method of claim 12, wherein after the pressure in the evaporation chamber is set to a pressure lower than a saturated vapor pressure of the cooling medium, the amount of the cooling medium supplied is adjusted, thereby controlling the temperature of the temperature adjustment surface.