DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER METAL
Methods of forming dual metal gates and the gates so formed are disclosed. A method may include forming a first metal (e.g., NMOS metal) layer on a gate dielectric layer and a second metal (e.g., PMOS metal) layer on the first metal layer, whereby the second metal layer alters a work function of the first metal layer (to form PMOS metal). The method may remove a portion of the second metal layer to expose the first metal layer in a first region; form a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and form the dual metal gates in the first and second regions. Since the gate dielectric layer is continuously covered with the first metal, it is not exposed to the damage from the metal etch process.
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This application is a divisional of currently pending U.S. patent application Ser. No. 12/129,984, filed May 30, 2008. The application identified above is incorporated herein by reference in its entirety for all that it contains in order to provide continuity of disclosure.
BACKGROUND OF THE INVENTION1. Technical Field
The invention relates generally to semiconductor device fabrication, and more particularly, to methods of forming and a resulting dual metal gate using one metal to alter a work function of another metal.
2. Background Art
Recently, there has been substantial interest in replacing polysilicon gate conductors with metal gate electrodes, so that the gate conductor is a metal in both n-type and p-type metal oxide semiconductor (NMOS and PMOS) devices. In order to provide appropriate threshold voltages in the two types of devices, two different metals are typically needed. In addition, the NMOS and PMOS devices require metals with different work functions. The “work function” of a material is a measurement of how much energy is required to extract an electron from the material by moving the electron in the solid from the Fermi level to the vacuum level, i.e., to outside of the solid.
Conventionally, the two metals used are selected based on their work function and ease of integration in terms of wet and dry etching depending on the method of implementation. There are several different integration schemes used to realize two different metal layers on the same wafer to form dual metal gates. Referring to
Next, as shown in
A number of challenges are presented by these processes. As shown in
The structure as illustrated in
In view of the foregoing, there is a need in the art for a solution to the problems of the related art.
SUMMARY OF THE INVENTIONMethods of forming dual metal gates and the gates so formed are disclosed. A method may include forming a first metal (e.g., NMOS metal) layer on a gate dielectric layer and a second metal (e.g., PMOS metal) layer on the first metal layer, whereby the second metal layer alters a work function of the first metal layer (to form PMOS metal). The method may then remove a portion of the second metal layer to expose the first metal layer in a first region; form a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and form the dual metal gates in the first and second regions. Since the gate dielectric layer is continuously covered with the first metal, it is not exposed to damage from the metal etch process.
A first aspect of the invention provides a method of forming dual metal gates, the method comprising: forming a first metal layer on a gate dielectric layer and a second metal layer on the first metal layer, wherein the second metal layer alters a work function of the first metal layer; removing a portion of the second metal layer to expose the first metal layer in a first region; forming a silicon layer on the exposed first metal layer in the first region and on the second metal layer in a second region; and forming the dual metal gates in the first and second regions.
A second aspect of the invention provides a method of forming dual metal gates, the method comprising: forming a first metal layer on a gate dielectric layer; forming a second metal layer on the first metal layer, wherein the second metal layer alters a work function of the first metal layer; and forming the dual metal gates without exposing the gate dielectric layer using the first metal layer and the second metal layer.
A third aspect of the invention provides a set of dual metal gates comprising: a first gate including a first metal having a first work function; a second gate including the first metal and a second metal, the second metal altering the first work function to a second work function for the second gate; and a gate dielectric layer under the first gate and the second gate, wherein only the first metal contacts the gate dielectric layer.
The illustrative aspects of the present invention are designed to solve the problems herein described and/or other problems not discussed.
These and other features of this invention will be more readily understood from the following detailed description of the various aspects of the invention taken in conjunction with the accompanying drawings that depict various embodiments of the invention, in which:
It is noted that the drawings of the invention are not to scale. The drawings are intended to depict only typical aspects of the invention, and therefore should not be considered as limiting the scope of the invention. In the drawings, like numbering represents like elements between the drawings.
DETAILED DESCRIPTIONTurning to the drawings,
First metal layer 110 and second metal layer 140 are selected such that second metal layer 140 alters a work function of first metal layer 110. That is, elements from second metal layer 140 are mixed with first metal layer 110 during the subsequent semiconductor device processing, primarily during a high temperature anneal and the final work function of first metal layer is altered from that of the material of first metal layer 110. The effect of changing work functions may be attributed to, for example, the changes in material composition, crystalline structure, interfacial reaction with underlying dielectrics, impurity concentration, and oxygen concentration. As illustrated, first metal layer 110 is ultimately used as a gate material for an NMOS device 100A (
Continuing with the processing,
One example of implementation is as follows: deposition of 100 Angstroms (Å) ALD of first metal layer 110 (
The foregoing description of various aspects of the invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and obviously, many modifications and variations are possible. Such modifications and variations that may be apparent to a person skilled in the art are intended to be included within the scope of the invention as defined by the accompanying claims.
Claims
1. A set of dual metal gates comprising:
- a first gate including a first metal having a first work function;
- a second gate including the first metal and a second metal, the second metal structured to alter the first work function to a second work function for the second gate; and
- a gate dielectric layer under the first gate and the second gate, wherein only the first metal contacts the gate dielectric layer.
2. The dual metal gates of claim 1, wherein one of the dual metal gates is for an n-type metal oxide semiconductor (NMOS) device and the other dual metal gate is for a p-type metal oxide semiconductor (PMOS).
3. The dual metal gates of claim 1, wherein a combination of the first metal and the second metal, respectively, are selected from the group consisting of: titanium nitride (TiN) and tantalum carbon nitride (TaCN), hafnium silicide (HfSi) and titanium silicon nitride (TiSiN), tantalum (Ta) and ruthenium (Ru), tantalum carbon nitride (TaCN) and titanium nitride (TiN).
4. The dual metal gates of claim 1, wherein the first metal includes one of: titanium nitride (TiN), hafnium silicide (HfSi), tantalum (Ta) and tantalum carbon nitride (TaCN), and the second metal includes one of: tantalum carbon nitride (TaCN), titanium nitride (TiN) and ruthenium (Ru).
5. The dual metal gates of claim 1, wherein the gate dielectric layer includes one of: hafnium silicate (HfSiOx), hafnium oxide (HfO2), zirconium silicate (ZrSiOx), zirconium oxide (ZrO2) and silicon oxide (SiO2).
6. The dual metal gates of claim 1, wherein the first gate is for an n-type metal oxide semiconductor (NMOS) device.
7. The dual metal gates of claim 6, wherein the second gate is for a p-type metal oxide semiconductor (PMOS) device.
8. The dual metal gates of claim 7, wherein the NMOS device and the PMOS device are separated by a trench isolation region.
9. The dual metal gates of claim 1, further comprising a silicon layer over the first gate and the second gate.
10. The dual metal gates of claim 9, wherein the silicon layer directly contacts the first metal layer in the first gate, and the silicon layer is prevented from contacting the first metal layer in the second gate by the second metal layer.
11. The dual metal gates of claim 10, wherein the silicon layer directly contacts the second metal layer in the second gate.
12. A set of dual metal gates comprising:
- a first gate including a first metal having a first work function;
- a second gate including the first metal and a second metal, the second metal structured to alter the first work function to a second work function for the second gate;
- a gate dielectric layer under the first gate and the second gate, wherein only the first metal contacts the gate dielectric layer; and
- a silicon layer over the first gate and the second gate, wherein the silicon layer directly contacts the first metal layer in the first gate, and the silicon layer is prevented from contacting the first metal layer in the second gate by the second metal layer.
13. The dual metal gates of claim 12, wherein one of the dual metal gates is for an n-type metal oxide semiconductor (NMOS) device and the other dual metal gate is for a p-type metal oxide semiconductor (PMOS).
14. The dual metal gates of claim 12, wherein a combination of the first metal and the second metal, respectively, are selected from the group consisting of: titanium nitride (TiN) and tantalum carbon nitride (TaCN), hafnium silicide (HfSi) and titanium silicon nitride (TiSiN), tantalum (Ta) and ruthenium (Ru), tantalum carbon nitride (TaCN) and titanium nitride (TiN).
15. The dual metal gates of claim 12, wherein the first metal includes one of: titanium nitride (TiN), hafnium silicide (HfSi), tantalum (Ta) and tantalum carbon nitride (TaCN), and the second metal includes one of: tantalum carbon nitride (TaCN), titanium nitride (TiN) and ruthenium (Ru).
16. The dual metal gates of claim 12, wherein the gate dielectric layer includes one of: hafnium silicate (HfSiOx), hafnium oxide (HfO2), zirconium silicate (ZrSiOx), zirconium oxide (ZrO2) and silicon oxide (SiO2).
17. The dual metal gates of claim 12, wherein the first gate is for an n-type metal oxide semiconductor (NMOS) device.
18. The dual metal gates of claim 17, wherein the second gate is for a p-type metal oxide semiconductor (PMOS) device.
19. The dual metal gates of claim 18, wherein the NMOS device and the PMOS device are separated by a trench isolation region.
20. The dual metal gates of claim 12, wherein the silicon layer directly contacts the second metal layer in the second gate.
Type: Application
Filed: Jun 18, 2012
Publication Date: Oct 11, 2012
Applicant: International Business Machines Corporation (Armonk, NY)
Inventors: Byoung H. Lee (Austin, TX), Sang Ho Bae (Seoul), Kisik Choi (Hopewell Junction, NY), Rino Choi (Seoul), Craig Huffman (Krugerville, TX), Prashant Majhi (Austin, TX), Jong Hoan Sim (Austin, TX), Seung-Chul Song (Austin, TX), Zhibo Zhang (San Diego, CA)
Application Number: 13/525,840
International Classification: H01L 27/092 (20060101);