Manufacturing Method of Submount
A submount and a manufacturing method thereof are provided. The submount, on which at least a semiconductor die is disposed, is mounted on a circuit board. The submount includes a substrate made of a conductive material or a semiconducting material, a plurality of conductive film patterns, and an insulating film pattern. A surface of the substrate includes a die-bonding area and a plurality of conductive areas. The conductive film patterns are individually distributed in the respective conductive areas. The insulating film pattern is disposed between the conductive film pattern and the insulating film pattern, but is not disposed in the die-bonding area. Furthermore, the semiconductor die is disposed in the die-bonding area and is electrically connected with the conductive film patterns. Because the insulating film pattern is not being disposed in the die-bonding area of the submount, the submount structure has improved heat transfer efficiency.
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This application is a divisional of an application Ser. No. 13/150,034, filed on Jun. 1, 2011, now pending, which claims the priority benefit of Taiwan application serial no. 099135494, filed on Oct. 19, 2010. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.
FIELD OF INVENTIONThe invention relates to a manufacturing method of a submount, especially relates to a manufacturing method of a submount in the field of the semiconductor packaging.
BACKGROUND OF THE INVENTIONWith the rapid technological development in recent years, semiconductor technologies can be applied in more different technical fields, such as in logic computation (e.g. CPU), data storage (e.g. DRAM), and light emitting diode (LED). However, the increasing performances of the semiconductor devices are accompanied by more heat emissions thereof. Therefore, the heat transfer technology is becoming more and more important.
For example, in present time, the luminous efficiency and the brightness of the light emitting diode is accepted by the public, so that the light emitting diode is used widely for example in backlight assembly, car lamp, and street light, etc. However, with the increasing brightness, the larger amount of heat emission from the light emitting diode has become a troublesome issue in the industry. If the heat emission cannot be removed efficiently, the brightness of the light emitting diode will be decreased and the service life will become shorter.
Nowadays, the types of submounts used for packaging the LED device according to respective types of substrates can be divided into four categories: a print circuit board (PCB) substrate, a metal core print circuit board (MCPCB) substrate, a ceramic substrate, and a silicon substrate. In comparing these four types of submounts, the cost of the print circuit board substrate is the lowest, but its heat transfer efficiency is relatively poor. Furthermore, due to the corresponding technical limitations and cost burden, an insulating film residing on the silicon substrate is often relatively thin, so that dielectric breakdown can easily occur. The ceramic substrate is usually in the form of an Al2O3 substrate in the market, but the heat transfer efficiency of the Al2O3 substrate is poor. An AlN substrate, which is one type of ceramic substrate, has higher heat transfer efficiency, but its cost is higher.
Although the MCPCB substrate has higher heat transfer efficiency than the PCB substrate, the improvement of the heat transfer efficiency is still limited by a dielectric layer between a metal layer and a LED die.
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In addition, a wire 112 and a wire 114 are connected with the light emitting diode 110. The wire 112 is connected to a positive conductive area 121 of the substrate 120, and the wire 114 is connected to a negative conductive area 122 of the substrate 120. The light emitting diode 110 is disposed in a die-mounting area 123 of the substrate 120. The positive conductive area 121, the negative conductive area 122, and the die-mounting area 123 are separated from each other by the insulators 140. The insulator 140 is formed in the holes of the substrate 120 by the injection of glue. Therefore, the holes should have a diameter larger than a predetermined diameter for allowing the glue injection to be performed in a smooth manner. However, this increases the width of the substrate 120, the distance between the positive conductive area 121 and the light emitting diode 120, and the distance between the negative conductive area 122 and the light emitting diode 120, thus the length of the wire 112 and the wire 114 have also to be increased. Furthermore, the LED device assembly 100 is electrically connected with the circuit board 10 by using a wire bonding method, so that the occupied area of the LED device assembly 100 on the circuit board 10 is increased.
Hence, there is a need in the art for providing a submount used for packaging the LED device or other semiconductor device, thereby having higher heat transfer efficiency, a longer service life, and a smaller occupied area.
SUMMARY OF THE INVENTIONOne aspect of the invention is to provide a manufacturing method of a submount. The submount made from the method has improved heat transfer efficiency, a longer service life, and a smaller occupied area.
To achieve the foregoing and other aspects, a manufacturing method of a submount is provided. The manufacturing method includes the following steps:
(a) A substrate, substantially made of a conductive or semiconducting material, is provided. The substrate has a plurality of through holes. A surface of the substrate includes a die-mounting area and a plurality of conductive areas.
(b) An insulating film pattern is formed on the substrate by using an electrochemical plating method, an electrophoresis method, or an electrochemical deposition method, and the insulating film pattern is not disposed in the die-mounting area.
(c) A plurality of conductive film patterns is formed and is individually disposed in the respective conductive areas.
(d) A semiconductor die is mounted in the die-mounting area.
(e) The semiconductor die is electrically connected with the conductive film patterns.
Because the insulating film pattern is not disposed in the die-mounting area of the submount, the submount has improved heat transfer efficiency.
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The manufacturing process of the insulating film pattern 240 is described in more detail in the following texts. Please refer to
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The manufacturing process of the conducting film pattern 230 is described in more detail in the following texts. Please see
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Because the cavity 221 is formed integrally on the substrate 220, the problem of the dislocation or separation between the reflector 130 and the substrate 120 of the LED device package assembly 100 in
The third conductive film 233 disposed on the side wall of the cavity 221 has a higher reflectivity, so that the light emitting from the light emitting diode 210 can be reflected by the third conductive film 233. In addition, the lens 270 is used to condense the light. These factors combined together all assist to increase the illumination quality of the LED device package assembly 200.
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In the above embodiments, the die-mounting area 223 is located in the center area of the substrate 220. However, a person skilled in the art should understand that the die-mounting area 223 is not limited to be disposed in the center area of the substrate 220. The material of the substrate 220 is copper in the above embodiment, but the substrate 220 can be made of other material, for example: aluminum or alloy including copper or aluminum. The substrate 220 can also be made of semiconductor material such as silicon, or of other material that can enable the substrate 220 to take on conductive properties. In addition, the die-mounting area 223 can be a flat surface without any cavity 221.
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Because the surface of the substrate 310 is a flat surface without having any cavity 221 and through holes 222 therein, besides of electrochemical plating, electrophoresis, or electrochemical deposition method, person of ordinary skill in the art can also use a printing method, a sputtering deposition method, or a spraying method to form an insulating film pattern 340 and a conductive film pattern 330 on the substrate 310.
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In the above embodiment, only one light emitting diode is disposed in the LED device package assembly. The person of ordinary skill in the art can also add more light emitting diodes depending upon the circumstances. These light emitting diodes are electrically parallel connected with each other.
In addition, besides being used along with the light emitting diode, the submount can also be adapter for usage in other kinds of semiconductor package structure. In other words, other types of semiconductor die, for example: a logic IC, a memory IC, an analog IC, or a CMOS sensor can be mounted on the die-mounting area of the submount. The quantity of the conductive film patterns is varied according to the type of the mounted semiconductor die, and mainly depending on the number of pins of the semiconductor die. For example, if the number of the pins is a total of ten, the corresponding number of the conductive film will also be ten. Because the insulating film pattern is not disposed in the die-mounting area of the submount, the semiconductor package structure using the submount has improved heat transfer efficiency.
Although the description above contains many specifics, these are merely provided to illustrate the invention and should not be construed as limitations of the invention's scope. Thus it will be apparent to those skilled, in the art that various modifications and variations can be made in the system and processes of the present invention without departing from the spirit or scope of the invention.
Claims
1. A manufacturing method of a submount for mounting a semiconductor die, comprising:
- (a) providing a substrate, the substrate substantially made of a conductive material or a semiconducting material, and a surface of the substrate comprising a die-mounting area and a plurality of conductive areas;
- (b) forming an insulating film pattern on the substrate, and the insulating film pattern being not disposed in the die-mounting area;
- (c) forming a plurality of conductive film patterns, and each conductive film pattern is disposed in one respective conductive area;
- (d) mounting a semiconductor die on the die-mounting area; and
- (e) electrically connecting the semiconductor die and the conductive film patterns;
- wherein the substrate comprises a plurality of through holes and a cavity, the through holes are passed through the substrate and are disposed on respective conductive areas, some parts of the conductive film patterns are disposed on the side walls of the through holes, the cavity is located on the die-mounting area and integrally formed on the substrate, and the semiconductor die is located in the cavity.
2. The manufacturing method of claim 1, wherein in step (b), the insulating film pattern is formed on the substrate by using an electrochemical plating method, an electrophoresis method, or an electrochemical deposition method.
3. The manufacturing method of claim 1, wherein the conductive area comprises a first conductive area and a second conductive area, the conductive film pattern comprises a first conductive film pattern and a second conductive film pattern, the first conductive film pattern and the second conductive film pattern are each disposed in the first conductive area and the second conductive area, respectively, and the semiconductor die is a light emitting diode.
4. The manufacturing method of claim 3, wherein before step (d), the manufacturing method further comprising:
- forming a third conductive film pattern on the die-mounting area.
5. The manufacturing method of claim 3, wherein step (c) further comprises the following steps:
- (c1) forming a seed layer;
- (c2) growing a conductive film on the seed layer by using an electrochemical plating method, an electrophoresis method, or an electrochemical deposition method.
6. The manufacturing method of claim 5, wherein in the (c1) step, the seed layer is formed by using an immersion plating method or a sputtering deposition method.
7. The manufacturing method of claim 1, wherein the material of the substrate is copper, aluminum, or an alloy comprising copper or aluminum.
8. The manufacturing method of claim 1, wherein the material of the substrate is silicon.
9. The manufacturing method of claim 1, wherein the material of the conductive film pattern is substantially comprised of copper, nickel, aurum, silver, or an alloy comprising copper, nickel, aurum, or silver.
10. The manufacturing method of claim 1, wherein the material of the insulating film pattern is a polymer.
11. The manufacturing method of claim 1, wherein the material of the insulating film pattern is epoxy resin, silicone, polyimide, or solder mask.
12. The manufacturing method of claim 1, wherein the thickness of the insulating film is larger than 2 μm.
13. The manufacturing method of claim 1, wherein in the step (b), the insulating film pattern is made by using a printing method, a sputtering deposition method, or a spraying method.
Type: Application
Filed: Oct 21, 2013
Publication Date: Feb 13, 2014
Applicant: Unistars (Hsinchu County 31061)
Inventors: Wen-Cheng Chien (Hsinchu County), Chia-Lun Tsai (Hsinchu County)
Application Number: 14/058,321
International Classification: H01L 23/00 (20060101);