LIGHT-EMITTING DEVICE AND LIGHT-EMITTING ARRAY
A light-emitting device includes a light-emitting stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a first surface, a second surface opposite to the first surface, a first portion connecting to the first surface, and a second portion connecting to the first portion; an opening penetrating the first portion from the first surface and having a first width; a depression connecting to the opening and penetrating the second semiconductor layer, the active layer, and the second portion of the first semiconductor layer, wherein the depression includes a second width greater than the first width, and the depression includes a bottom to expose the second surface, and an electrode located in the depression and corresponding to the opening.
This application claims the right of priority based on TW application Serial No. 102122124, filed on Jun. 20, 2013 and Serial No. 103115304, filed on, Apr., 28, 2014, and the content of which is hereby incorporated by reference in its entirety.
TECHNICAL FIELDThe disclosure is related to a light-emitting device, and more particularly, a light-emitting device and a light-emitting array with a connecting layer between a substrate and a light-emitting stack.
DESCRIPTION OF THE RELATED ARTThe lighting theory of light-emitting diodes (LEDs) is that electrons move between an n-type semiconductor and a p-type semiconductor to release energy. Due to the difference of lighting theories between LEDs and incandescent lamps, the LED is called “cold light source”. An LED has the advantages of good environment tolerance, a long service life, portability, and low power consumption and is regarded as another option for the lighting application. LEDs are widely adopted in different fields, for example, traffic lights, backlight modules, street lights, and medical devices and replaces conventional light sources gradually.
An LED has a light-emitting stack which is epitaxially grown on a conductive substrate or an insulting substrate. The so-called “vertical LED” has a conductive substrate and includes an electrode formed on the top of a light emitting layer; the so-called “lateral LED” has an insulative substrate and includes electrodes formed on two semiconductor layers which have different polarities and exposed by an etching process. The vertical LED has the advantages of small light-shading area for electrodes, good heat dissipating efficiency, and no additional etching epitaxial process, but has a shortage that the conductive substrate served as an epitaxial substrate absorbs light easily and is adverse to the light efficiency of the LED. The lateral LED has the advantage of radiating light in all directions due to a transparent substrate used as the insulator substrate, but has shortages of poor heat dissipation, larger light-shading area for electrodes, and smaller light-emitting area caused by epitaxial etching process.
The abovementioned LED can further connects to/with other device for forming a light-emitting device. For a light-emitting device, the LED can connect to a carrier by a side of a substrate or by soldering material/adhesive material between a sub-carrier and the LED.
SUMMARY OF THE DISCLOSUREA light-emitting device includes a light-emitting stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a first surface, a second surface opposite to the first surface, a first portion connecting to the first surface, and a second portion connecting to the first portion; an opening penetrating the first portion and having a first width; a depression connecting to the opening and penetrating the second semiconductor layer, the active layer, and the second portion of the first semiconductor layer, wherein the depression includes a second width wider than the first width, and the depression includes a bottom to expose the second surface; and an electrode located in the depression and corresponding to the opening.
A light-emitting array includes a substrate having an upper surface, light-emitting units on the upper surface of the substrate, wherein each of the light-emitting units includes a first surface and a second surface opposite to the first surface and toward to the upper surface; an insulative layer, between the substrate and the light-emitting unit, covering the second surface of each of the light-emitting units; and at least one of wires embedded in the insulative layer, wherein each of the at least one of wires includes a conductive channel, penetrating the insulative layer and electrically connecting with the second surface, and a bridge electrically connecting with the conductive channel, and at least one of the bridges electrically connects two of the light-emitting units via a plurality the conductive channels.
The accompanying drawing is included to provide easy understanding of the application, and is incorporated herein and constitutes a part of this specification. The drawing illustrates the embodiment of the application and, together with the description, serves to illustrate the principles of the application.
To better and concisely explain the disclosure, the same name or the same reference number given or appeared in different paragraphs or figures along the specification should has the same or equivalent meanings while it is once defined anywhere of the disclosure.
The following shows the description of embodiments of the present disclosure in accordance with the drawing.
Referring to
Referring to
Referring to
Referring to
Referring to
Referring to
Referring to
Referring to
With the abovementioned processes, the light-emitting device 100 disclosed in the embodiment includes the conductive substrate 122; the joining structure 120 formed on the conductive substrate 122; the reflective layer 118 formed on the joining structure 120; the conductive structure 117 including the barrier 116 formed on a portion of the reflective layer 118, and the conductive layer 112 covered by the barrier 116; the light-emitting stack 108 including the first semiconducting layer 102, the active layer 104, and the second semiconducting layer 106 electrically connecting with the conductive layer 112; the insulative structure 114 formed on a portion of the reflective layer 118 and penetrating the second semiconducting layer 106, the active layer 104, and the second part 102c of the first semiconducting layer 102; the electrode 110 covered by the insulative structure 124 wherein the upper surface 110a of the electrode 110 connects to the first semiconducting layer 102; and the opening 124 penetrating the first portion 102b of the first semiconducting layer 102. Herein, the insulative structure 114 insulates the electrode 110 from the second semiconductor 106 and the active layer 104, and the electrode 110 and the active layer 104 are on different regions along the horizontal direction of the light-emitting device 100 while the whole active layer 104 is located above the conductive structure 117. Therefore, the light from the active layer 104 is not shielded by the electrode 110 of the light-emitting device 100 and the conductive structure 117. The upper surface 110a of the electrode 110 can be connected with an external power source.
The light-emitting units 1112 are epitaxially grown on the same wafer (not shown in figures). After epitaxially growth, the first surface 1113 connects to the wafer and the second surface 1115 faces up. The first region 1115a and the second region 1115b of the second surface 1115 can be defined by an etching process as the light-emitting units 1112 are not defined yet. After carrying the light-emitting unit 1112 on the insulative substrate 1110 via the joining layer 1124, the wafer can be removed and the first surface 1113 is exposed. In sequence, a plurality of the light-emitting units 1112 electrically insulated from one another can be formed from the first surface 1113 by an etching process. Additionally, the first surface 1113 similar to the one in the first embodiment is a rough surface.
The insulative layer 1114 can include a first insulative layer 1114a and a second insulative layer 1114b and is made of silicon oxide SiO2, for example. The first insulative layer 1114a can cover the first region 1115a and the second region 1115b of the second surface 1115 to form a surface substantially parallel to the upper surface 1110a of the insulative substrate 1110. The wire 1116 includes a conductive channel 1116a penetrating the first insulative layer 1114a for electrically connecting with the first region 1115a or the second region 1115b, and a bridge 1116b laterally extending along a surface of the first insulative layer 1114a and connecting to the conductive channels 1116a of the neighboring light-emitting units 1112. The bridge 1116b can connect to identical/different polarities of two different light-emitting units 1112 for forming a serial/parallel/in inverse-parallel connection. The second insulative layer 1114b can cover the insulative layer 1114a and the bridge 1116b.
The light-emitting unit 1112 includes a first semiconductor layer 1101 having the first surface 1113 and the first region 1115a of the second surface 1115, a second semiconductor layer 1102 having the second region 1115b of the second surface 1115, and an active layer 1103 between the first semiconductor layer 1101 and the second semiconductor layer 1102. The first semiconductor layer 1101 has the first polarity and the second semiconductor layer 1102 has the second polarity different from the first polarity. In the embodiment, the first polarity of the first semiconductor layer 1101 is n-type; the second polarity of the semiconductor layer 1102 is p-type. The first region 1115a of the second surface 1115 is farther from the insulative substrate 1110 than the second region 1115b to expose the first semiconductor layer 1101. The insulative layer 1114 covers the second surface 1115 and fills a convex-concave structure formed by the first region 1115a and the second region 1115b. There can be multiple first regions 1115a of the light-emitting unit 1112 which connect to a plurality of the conductive channels 1116a, and lateral sides of the conductive channels 1116a which connect to the first regions 1115a are covered by the first insulative layer 1114a so as to be electrically insulated from the second region 1115b of the second semiconductor 1102 of the individual light-emitting unit 1112. Similar to the first embodiment, a conductive layer 1104 with reflectivity and a barrier 1105 covering the conductive layer 1104 can be formed on the second region 1115b. The first electrode 1118 can electrically connect with the first region 1115a of the light-emitting unit 1112 via the bridge 1116b; the second electrode 1120 can electrically connect with the second region 1115b of the light-emitting unit 1112 via the barrier 1105. The bridge 1116b connecting to the first electrode 1118 is co-planar with a first exposing surface 1114c of the second insulative layer 1114b; the barrier 1105 connecting to the second electrode 1120 is co-planar with a second exposing surface 1114d of the first insulative layer 1114a wherein the first exposing surface 1114c is closer to the insulative substrate 1110 than the second exposing surface 1114d. A light-emitting array 1100 including a circuit in series/in parallel/in inversed-parallel can be formed between the first electrode 1118 and the second electrode 1120.
Light from each of the light-emitting unit 1112 emits out of the first surface 1113, the wires 1116 are located below all of the light-emitting units 1112, and the first electrode 1118 and the second electrode 1120 are side by side with all of the light-emitting units 1112. Accordingly, the light is not shaded by the wires 1116, the first electrode 1118, and the second electrode 1120 disclosed in the embodiment.
The principle and the efficiency of the present application illustrated by the embodiments above are not the limitation of the application. Any person having ordinary skill in the art can modify or change the aforementioned embodiments. Therefore, the protection range of the rights in the application will be listed as the following claims.
Claims
1. A light-emitting device, comprising:
- a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer comprises a first surface, a second surface opposite to the first surface, a first portion connecting to the first surface, and a second portion connecting to the first portion;
- an opening penetrating the first portion of the first semiconductor from the first surface and having a first width;
- a depression connecting to the opening and penetrating the second semiconductor layer, the active layer, and the second portion of the first semiconductor layer, wherein the depression has a second width greater than the first width and comprises a bottom to expose the second surface; and
- an electrode located in the depression and corresponding to the opening.
2. The light-emitting device of claim 1, further comprising an insulative structure filling the depression and covering the electrode.
3. The light-emitting device of claim 2, wherein the electrode is connected to the second surface.
4. The light-emitting device of claim 3, further comprising a wiring electrode formed in the depression and connecting to the electrode.
5. The light-emitting device of claim 3, wherein the insulative structure separates the electrode, the active layer, and the second semiconductor layer.
6. The light-emitting device of claim 2, further comprising a conductive structure connecting to the second semiconductor layer wherein the conductive structure comprises a conductive layer electrically connecting with the second semiconductor layer and a barrier covering the second semiconductor layer.
7. The light-emitting device of claim 6, wherein the conductive layer is a metal having reflectivity and comprising nickel (Ni), platinum (Pt), palladium (Pd), silver (Ag), chromium (Cr), or combinations thereof, and the barrier comprises titanium (Ti), tungsten (W), platinum (Pt), titanium tungsten (TiW), or combinations thereof.
8. The light-emitting device of claim 6, wherein the insulative structure is below the second semiconductor and the conductive structure comprises conductive channels penetrating the insulative layer and connecting to the second semiconductor layer.
9. The light-emitting device of claim 6, further comprising a metal reflective layer below the conductive structure and the insulative structure, a conductive joining layer below the metal reflective layer, and a conductive substrate below the conductive joining layer.
10. The light-emitting device of claim 1, wherein the electrode comprises at least one of wiring electrodes and an extensive electrode extending from the wiring electrode.
11. The light-emitting device of claim 10, wherein the wiring electrode is located at a corner of the light-emitting device, and the extensive electrode extends in a direction far away from the wiring electrode, or the wiring electrode is located at a corner of the light-emitting device, and the extensive electrode extends along surroundings of the light-emitting device, or the wiring electrode is located at a geometric center of the light-emitting device and the extensive electrode comprises a plurality of radial branches extending from the wiring electrode, or the wiring electrode comprises a first electrode and a second electrode on a side of the light-emitting device, and the extensive electrode comprises a plurality of radial branches extending from the first electrode and the second electrode to an opposite side, opposite to the side, and a connective electrode connecting with the first electrode and the second electrode.
12. The light-emitting device of claim 1, wherein the first surface of the first semiconductor layer is devoid of a structure shielding light emitted from the active layer
13. The light-emitting device of claim 1, wherein the first semiconductor layer comprises an n-type semiconductor layer and the second semiconductor layer comprises a p-type semiconductor layer.
14. The light-emitting device of claim 1, wherein a size of the light-emitting device is 1 mil to 70 mils.
15. A light-emitting array, comprising:
- a substrate comprising an upper surface;
- a plurality of light-emitting units on the upper surface of the substrate wherein each of the light-emitting units comprises a first surface and a second surface opposite to the first surface toward to the upper surface;
- an insulative layer between the substrate and the light-emitting units and covering the second surface of each of the light-emitting units; and
- a wire embedded in the insulative layer, wherein the wire comprises a conductive channel, penetrating the insulative layer and electrically connecting with the second surface and a bridge connecting with the conductive channel, and the bridge electrically connects with two of the light-emitting units via the conductive channel.
16. The light-emitting array of claim 15, wherein the first surface has a first polarity, the second surface comprises a first region with the first polarity and a second region nearer the upper surface than the first region with a second polarity, and the conductive channel electrically connects with the first region or the second region.
17. The light-emitting array of claim 16, wherein the substrate is a conductive substrate, and one of the light-emitting units comprises the conductive channel electrically connecting the second region with the conductive substrate or electrically connecting the first region with the conductive substrate.
18. The light-emitting array of claim 16, further comprising a conductive joining layer between the conductive substrate and the insulative layer.
19. The light-emitting array of claim 16, wherein each of the light emitting units comprises a plurality of the first regions and each of the first regions connects to a plurality of conductive channels.
20. The light-emitting array of claim 16, further comprising an electrode on a surface of the insulative layer opposite to the upper surface, located outside each of the light-emitting units, and electrically connecting with the bridge which electrically connects with the first region or the second region of one of the light-emitting units.
Type: Application
Filed: Jun 11, 2014
Publication Date: Dec 25, 2014
Inventors: Wei-Jung CHUNG (Hsinchu), Jennhwa FU (Hsinchu), Cheng-Hsien LI (Hsinchu), Chi-Hao HUANG (Hsinchu)
Application Number: 14/301,492
International Classification: H01L 33/62 (20060101); H01L 25/075 (20060101); H01L 33/60 (20060101);