LIGHT EMITTING DEVICE
A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.
This application is a continuation application of U.S. patent application Ser. No. 13/730,130, entitled “LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE”, filed Dec. 28, 2012, which is a divisional application of U.S. patent application Ser. No. 13/114,384, entitled “LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE”, filed May 24, 2011, which is a continuation application of U.S. patent application Ser. No. 11/724,310, entitled “LIGHT EMITTING DIODE HAVING A TRANSPARENT SUBSTRATE”, filed Mar. 15, 2007 claiming the right of priority based on Taiwan application Ser. No. 090115871, filed Jun. 27, 2001; the content of which is incorporated herein by reference in their entirety.
TECHNICAL FIELDThe present invention relates to a light-emitting device, more specifically to a light-emitting device with a light-emitting stack on a transparent conductive layer.
DESCRIPTION OF BACKGROUND ARTLight emitting diodes (LEDs) are employed in a wide variety of applications including optical display devices, traffic lights, data storage equipment, communication devices, illumination apparatuses, and medical treatment equipment. Some of the main goals of engineers who design LEDs are to increase the brightness of the light emitted from LEDs and to reduce the cost of manufacturing LEDs.
U.S. Pat. No. 5,783,477 discloses a method of bonding two compound semiconductor surfaces to produce an ohmic contact interface. The method of manufacturing a prior art LED is to create an ohmic contact interface by aligning the crystallographic orientation and rotational alignment of two semiconductor surfaces and applying uniaxial pressure to the semiconductor wafers at a temperature of 1000° C. In actual procedure, however, it is difficult and expensive to align the crystallographic orientation and rotational alignment of the two semiconductor surfaces.
SUMMARY OF THE DISCLOSUREA light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.
According to the description of these embodiments, LEDs having a transparent substrate can be manufactured by a method of bonding two chips using an amorphous interface layer. LEDs made according to the present invention are easier to manufacture, less expensive to manufacture, and brighter than those made according to the prior art.
While the invention has been disclosed and described with reference to these preferred embodiments, the scope of the invention is not limited to these preferred embodiments. Any variation and modifications of the invention still falls within the spirit and scope of the invention. For example, using a transparent conductive layer of adhesive agent instead of a single-crystal interface layer or using a single quantum well light-emitting layer instead of a multiple quantum well light-emitting layer cannot escape the scope and spirit of the invention. Moreover, the manufacturing method of the present invention is also suitable for manufacturing a light emitting diode having a non-transparent substrate.
Those skilled in the art will readily observe that numerous modifications and alterations of the device may be made while retaining the teachings of the invention.
Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims
1. A light-emitting structure, comprising:
- a transparent substrate:
- a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface;
- a first light-emitting stack formed on the first top surface; and
- a first electrode directly formed on the second top surface.
2. The light-emitting structure of claim 1, further comprising a second transparent conductive layer electrically connected to the light-emitting stack.
3. The light-emitting structure of claim 2, wherein the first transparent conductive layer and the second transparent conductive layer comprises a same material.
4. The light-emitting structure of claim 2, further comprising a second electrode formed on the second transparent conductive layer.
5. The light-emitting structure of claim 2, wherein the first light-emitting stack comprises a semiconductor layer with a width equal to that of the second transparent conductive layer.
6. The light-emitting structure of claim 2, wherein the first transparent conductive layer, the second transparent conductive layer or both comprise ITO.
7. The light-emitting structure of claim 1, further comprising a second light-emitting stack formed on the first transparent conductive layer.
8. The light-emitting structure of claim 1, wherein the first transparent conductive layer is a non-semiconductor layer.
9. The light-emitting structure of claim 1, wherein the transparent substrate comprises sapphire, GaP or glass.
10. The light-emitting structure of claim 1, wherein the first light-emitting stack comprises a semiconductor layer with a width less than that of the first transparent conductive layer.
11. The light-emitting structure of claim 1, wherein the first transparent conductive layer is an amorphous layer.
12. The light-emitting structure of claim 1, wherein the first top surface and the second top surface are flat.
13. The light-emitting structure of claim 1, wherein the first transparent conductive layer is a non-epitaxial layer.
Type: Application
Filed: Jan 12, 2015
Publication Date: May 7, 2015
Inventors: Min-Hsun HSIEH (Hsinchu), Kuen-Ru CHUANG (Hsinchu), Shu-Wen SUNG (Hsinchu), Chia-Cheng LIU (Hsinchu), Chao-Nien HUANG (Hsinchu), Shane-Shyan WEY (Hsinchu), Chih-Chiang LU (Hsinchu), Ming-Jiunn JOU (Hsinchu)
Application Number: 14/594,761
International Classification: H01L 33/16 (20060101); H01L 33/42 (20060101);